DE69839721D1 - Veraschungsverfahren - Google Patents
VeraschungsverfahrenInfo
- Publication number
- DE69839721D1 DE69839721D1 DE69839721T DE69839721T DE69839721D1 DE 69839721 D1 DE69839721 D1 DE 69839721D1 DE 69839721 T DE69839721 T DE 69839721T DE 69839721 T DE69839721 T DE 69839721T DE 69839721 D1 DE69839721 D1 DE 69839721D1
- Authority
- DE
- Germany
- Prior art keywords
- ashing process
- ashing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004380 ashing Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25556497A JP3318241B2 (ja) | 1997-09-19 | 1997-09-19 | アッシング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69839721D1 true DE69839721D1 (de) | 2008-08-28 |
Family
ID=17280481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69839721T Expired - Fee Related DE69839721D1 (de) | 1997-09-19 | 1998-03-16 | Veraschungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US6043004A (de) |
EP (1) | EP0910118B1 (de) |
JP (1) | JP3318241B2 (de) |
KR (1) | KR100298259B1 (de) |
DE (1) | DE69839721D1 (de) |
TW (1) | TW382745B (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6417080B1 (en) * | 1999-01-28 | 2002-07-09 | Canon Kabushiki Kaisha | Method of processing residue of ion implanted photoresist, and method of producing semiconductor device |
JP3449535B2 (ja) * | 1999-04-22 | 2003-09-22 | ソニー株式会社 | 半導体素子の製造方法 |
US6235453B1 (en) * | 1999-07-07 | 2001-05-22 | Advanced Micro Devices, Inc. | Low-k photoresist removal process |
US20050022839A1 (en) * | 1999-10-20 | 2005-02-03 | Savas Stephen E. | Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing |
US20010027023A1 (en) * | 2000-02-15 | 2001-10-04 | Shigenori Ishihara | Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses |
US6543617B2 (en) | 2001-03-09 | 2003-04-08 | International Business Machines Corporation | Packaged radiation sensitive coated workpiece process for making and method of storing same |
US6831018B2 (en) | 2001-08-21 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
JP4838464B2 (ja) | 2001-09-26 | 2011-12-14 | 東京エレクトロン株式会社 | 処理方法 |
JP2003163212A (ja) * | 2001-11-27 | 2003-06-06 | Nec Electronics Corp | 半導体装置の製造方法 |
US6680164B2 (en) | 2001-11-30 | 2004-01-20 | Applied Materials Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
KR100570205B1 (ko) * | 2001-12-18 | 2006-04-12 | 주식회사 하이닉스반도체 | 반도체 소자의 감광막 제거방법 |
US20030215962A1 (en) * | 2002-05-14 | 2003-11-20 | Applied Materials, Inc. | Integration of multiple processes within a single chamber |
US6924157B1 (en) * | 2002-10-21 | 2005-08-02 | Advanced Micro Devices, Inc. | Real time particle monitor inside of plasma chamber during resist strip processing |
US6897162B2 (en) * | 2003-10-20 | 2005-05-24 | Wafermasters, Inc. | Integrated ashing and implant annealing method |
US20050158667A1 (en) * | 2004-01-20 | 2005-07-21 | Applied Materials, Inc. | Solvent free photoresist strip and residue removal processing for post etching of low-k films |
US20070186953A1 (en) * | 2004-07-12 | 2007-08-16 | Savas Stephen E | Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing |
US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
KR100661373B1 (ko) | 2004-12-30 | 2006-12-27 | 매그나칩 반도체 유한회사 | 광촉매를 이용한 에싱 방법 및 에싱 장치 |
JP5011852B2 (ja) | 2005-07-20 | 2012-08-29 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
JP4739917B2 (ja) * | 2005-11-07 | 2011-08-03 | 富士通セミコンダクター株式会社 | レジストマスクの剥離方法 |
KR100736126B1 (ko) | 2005-12-28 | 2007-07-06 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 방법 |
US20080261384A1 (en) * | 2007-04-18 | 2008-10-23 | United Microelectronics Corp. | Method of removing photoresist layer and method of fabricating semiconductor device using the same |
JP5457109B2 (ja) | 2009-09-02 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2013098054A (ja) * | 2011-11-01 | 2013-05-20 | Ulvac Japan Ltd | マイクロ波導入装置 |
JP2015037166A (ja) * | 2013-08-16 | 2015-02-23 | 株式会社アルバック | レジスト剥離方法およびレジスト剥離装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511430A (en) * | 1984-01-30 | 1985-04-16 | International Business Machines Corporation | Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process |
JPH0760820B2 (ja) * | 1987-10-29 | 1995-06-28 | 日本電気株式会社 | 半導体製造装置 |
US5226056A (en) * | 1989-01-10 | 1993-07-06 | Nihon Shinku Gijutsu Kabushiki Kaisha | Plasma ashing method and apparatus therefor |
JP2785027B2 (ja) * | 1989-01-10 | 1998-08-13 | 日本真空技術株式会社 | プラズマアッシング方法 |
JPH04286317A (ja) * | 1991-03-15 | 1992-10-12 | Fujitsu Ltd | 半導体装置のアッシング方法及びアッシング装置 |
JPH04352157A (ja) * | 1991-05-30 | 1992-12-07 | Toyota Autom Loom Works Ltd | レジスト除去方法 |
JP3247722B2 (ja) * | 1992-04-15 | 2002-01-21 | 東京応化工業株式会社 | プラズマアッシング方法 |
JP3391410B2 (ja) * | 1993-09-17 | 2003-03-31 | 富士通株式会社 | レジストマスクの除去方法 |
JPH0869896A (ja) * | 1994-08-30 | 1996-03-12 | Sony Corp | プラズマ処理装置およびプラズマ処理方法 |
JPH08288260A (ja) * | 1995-04-18 | 1996-11-01 | Sony Corp | ヘリコン波プラズマ・アッシング方法 |
JPH0936103A (ja) * | 1995-07-18 | 1997-02-07 | Ulvac Japan Ltd | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 |
US5795831A (en) * | 1996-10-16 | 1998-08-18 | Ulvac Technologies, Inc. | Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
US5811358A (en) * | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
-
1997
- 1997-09-19 JP JP25556497A patent/JP3318241B2/ja not_active Expired - Lifetime
-
1998
- 1998-03-13 US US09/041,676 patent/US6043004A/en not_active Expired - Lifetime
- 1998-03-16 DE DE69839721T patent/DE69839721D1/de not_active Expired - Fee Related
- 1998-03-16 EP EP98301939A patent/EP0910118B1/de not_active Expired - Lifetime
- 1998-03-19 TW TW087104101A patent/TW382745B/zh not_active IP Right Cessation
- 1998-04-01 KR KR1019980011473A patent/KR100298259B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH1197421A (ja) | 1999-04-09 |
KR100298259B1 (ko) | 2001-10-25 |
US6043004A (en) | 2000-03-28 |
TW382745B (en) | 2000-02-21 |
JP3318241B2 (ja) | 2002-08-26 |
KR19990029149A (ko) | 1999-04-26 |
EP0910118B1 (de) | 2008-07-16 |
EP0910118A1 (de) | 1999-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |