DE69819030D1 - Doppelfrequenz cvd verfahren und vorrichtung - Google Patents
Doppelfrequenz cvd verfahren und vorrichtungInfo
- Publication number
- DE69819030D1 DE69819030D1 DE69819030T DE69819030T DE69819030D1 DE 69819030 D1 DE69819030 D1 DE 69819030D1 DE 69819030 T DE69819030 T DE 69819030T DE 69819030 T DE69819030 T DE 69819030T DE 69819030 D1 DE69819030 D1 DE 69819030D1
- Authority
- DE
- Germany
- Prior art keywords
- cvd method
- double frequency
- frequency cvd
- double
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/980,520 US6098568A (en) | 1997-12-01 | 1997-12-01 | Mixed frequency CVD apparatus |
US980520 | 1997-12-01 | ||
PCT/US1998/024928 WO1999028533A1 (en) | 1997-12-01 | 1998-11-25 | Mixed frequency cvd process and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69819030D1 true DE69819030D1 (de) | 2003-11-20 |
DE69819030T2 DE69819030T2 (de) | 2004-06-24 |
Family
ID=25527622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69819030T Expired - Fee Related DE69819030T2 (de) | 1997-12-01 | 1998-11-25 | Doppelfrequenz cvd verfahren und vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6098568A (de) |
EP (1) | EP1036214B1 (de) |
JP (1) | JP4365528B2 (de) |
KR (1) | KR100583606B1 (de) |
DE (1) | DE69819030T2 (de) |
TW (1) | TW407304B (de) |
WO (1) | WO1999028533A1 (de) |
Families Citing this family (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7004107B1 (en) * | 1997-12-01 | 2006-02-28 | Applied Materials Inc. | Method and apparatus for monitoring and adjusting chamber impedance |
JPH11193470A (ja) | 1997-12-26 | 1999-07-21 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
US6136703A (en) * | 1998-09-03 | 2000-10-24 | Micron Technology, Inc. | Methods for forming phosphorus- and/or boron-containing silica layers on substrates |
US6326861B1 (en) * | 1999-07-16 | 2001-12-04 | Feltech Corporation | Method for generating a train of fast electrical pulses and application to the acceleration of particles |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6857387B1 (en) * | 2000-05-03 | 2005-02-22 | Applied Materials, Inc. | Multiple frequency plasma chamber with grounding capacitor at cathode |
JP2002194547A (ja) * | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
US6622286B1 (en) * | 2000-06-30 | 2003-09-16 | Lam Research Corporation | Integrated electronic hardware for wafer processing control and diagnostic |
US6777037B2 (en) * | 2001-02-21 | 2004-08-17 | Hitachi, Ltd. | Plasma processing method and apparatus |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6984288B2 (en) * | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
US7390755B1 (en) | 2002-03-26 | 2008-06-24 | Novellus Systems, Inc. | Methods for post etch cleans |
US6541397B1 (en) * | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6664202B2 (en) | 2002-04-18 | 2003-12-16 | Applied Materials Inc. | Mixed frequency high temperature nitride CVD process |
KR20040007963A (ko) * | 2002-07-15 | 2004-01-28 | 삼성전자주식회사 | 단원자층 증착 반응장치 |
US7087537B2 (en) * | 2004-03-15 | 2006-08-08 | Sharp Laboratories Of America, Inc. | Method for fabricating oxide thin films |
US6811831B1 (en) * | 2002-11-20 | 2004-11-02 | Silicon Magnetic Systems | Method for depositing silicon nitride |
US7238393B2 (en) * | 2003-02-13 | 2007-07-03 | Asm Japan K.K. | Method of forming silicon carbide films |
US7049751B2 (en) * | 2003-07-16 | 2006-05-23 | Advanced Energy Industries, Inc | Termination of secondary frequencies in RF power delivery |
US6995545B2 (en) * | 2003-08-18 | 2006-02-07 | Mks Instruments, Inc. | Control system for a sputtering system |
US7098428B1 (en) * | 2004-02-04 | 2006-08-29 | Brent Elliot | System and method for an improved susceptor |
US7638440B2 (en) * | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
JP4879159B2 (ja) * | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのcvdプロセス |
US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
US7079740B2 (en) * | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
EP1789605A2 (de) * | 2004-07-12 | 2007-05-30 | Applied Materials, Inc. | Steuerung der plasmaeinheitlichkeit durch gasdiffusorkrümmung |
US7288484B1 (en) | 2004-07-13 | 2007-10-30 | Novellus Systems, Inc. | Photoresist strip method for low-k dielectrics |
US20060105106A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Tensile and compressive stressed materials for semiconductors |
US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
US7202176B1 (en) * | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
US20080314320A1 (en) * | 2005-02-04 | 2008-12-25 | Component Re-Engineering Company, Inc. | Chamber Mount for High Temperature Application of AIN Heaters |
US7480974B2 (en) * | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
GB0508706D0 (en) * | 2005-04-28 | 2005-06-08 | Oxford Instr Plasma Technology | Method of generating and using a plasma processing control program |
US8129281B1 (en) | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
DE602006008780D1 (de) * | 2005-06-10 | 2009-10-08 | Bird Technologies Group Inc | System und verfahren zur analyse des stromflusses in halbleiter-plasmaerzeugungssystemen |
US20070042131A1 (en) * | 2005-08-22 | 2007-02-22 | Applied Materials, Inc., A Delaware Corporation | Non-intrusive plasma monitoring system for arc detection and prevention for blanket CVD films |
KR100734775B1 (ko) * | 2005-09-15 | 2007-07-04 | 주식회사 아이피에스 | 샤워헤드 |
US7829159B2 (en) * | 2005-12-16 | 2010-11-09 | Asm Japan K.K. | Method of forming organosilicon oxide film and multilayer resist structure |
CN101361164B (zh) * | 2006-01-18 | 2011-04-20 | Oc欧瑞康巴尔斯公司 | 用于盘状衬底除气的装置 |
US20070169703A1 (en) * | 2006-01-23 | 2007-07-26 | Brent Elliot | Advanced ceramic heater for substrate processing |
DE102006005128B4 (de) * | 2006-02-04 | 2008-09-25 | Hüttinger Elektronik GmbH & Co. KG | Verfahren und Vorrichtung zur Lastanpassung |
KR100752622B1 (ko) * | 2006-02-17 | 2007-08-30 | 한양대학교 산학협력단 | 원거리 플라즈마 발생장치 |
US7833358B2 (en) * | 2006-04-07 | 2010-11-16 | Applied Materials, Inc. | Method of recovering valuable material from exhaust gas stream of a reaction chamber |
DE102006019881B4 (de) * | 2006-04-28 | 2017-04-06 | Advanced Micro Devices, Inc. | Technik zur Herstellung einer Siliziumnitridschicht mit hoher intrinsischer kompressiver Verspannung |
US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
US20080083979A1 (en) * | 2006-10-10 | 2008-04-10 | Sumitomo Electric Industries, Ltd. | Wafer holder and semiconductor manufacturing apparatus equipped with wafer holder |
US7740768B1 (en) | 2006-10-12 | 2010-06-22 | Novellus Systems, Inc. | Simultaneous front side ash and backside clean |
US8152923B2 (en) * | 2007-01-12 | 2012-04-10 | Veeco Instruments Inc. | Gas treatment systems |
US8435895B2 (en) | 2007-04-04 | 2013-05-07 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
US20080254233A1 (en) * | 2007-04-10 | 2008-10-16 | Kwangduk Douglas Lee | Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes |
US20090093128A1 (en) * | 2007-10-08 | 2009-04-09 | Martin Jay Seamons | Methods for high temperature deposition of an amorphous carbon layer |
JP4983575B2 (ja) * | 2007-11-30 | 2012-07-25 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US20090255798A1 (en) * | 2008-04-12 | 2009-10-15 | Gaku Furuta | Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber |
CN101999158A (zh) * | 2008-04-12 | 2011-03-30 | 应用材料股份有限公司 | 等离子体处理设备与方法 |
US20090258162A1 (en) * | 2008-04-12 | 2009-10-15 | Applied Materials, Inc. | Plasma processing apparatus and method |
US20090269923A1 (en) * | 2008-04-25 | 2009-10-29 | Lee Sang M | Adhesion and electromigration improvement between dielectric and conductive layers |
KR200449200Y1 (ko) * | 2008-06-03 | 2010-06-24 | 주식회사 테스 | 화학기상증착장치의 고주파 차단용 필터유닛 |
JP5156552B2 (ja) * | 2008-09-08 | 2013-03-06 | 富士フイルム株式会社 | ガスバリアフィルムの製造方法 |
JP5295833B2 (ja) * | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
US8591661B2 (en) | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
US20100177454A1 (en) * | 2009-01-09 | 2010-07-15 | Component Re-Engineering Company, Inc. | Electrostatic chuck with dielectric inserts |
KR101315950B1 (ko) * | 2009-06-24 | 2013-10-08 | 엘지전자 주식회사 | 플라즈마 증착 장치 및 이 장치를 이용한 박막 제조 방법 |
US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
CN102652351B (zh) | 2009-12-11 | 2016-10-05 | 诺发系统有限公司 | 在高剂量植入剥除前保护硅的增强式钝化工艺 |
US9028924B2 (en) | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US20120009765A1 (en) * | 2010-07-12 | 2012-01-12 | Applied Materials, Inc. | Compartmentalized chamber |
DE102011004782A1 (de) | 2011-02-25 | 2012-08-30 | Harting Kgaa | Ablösbare Mikro- und Nanobauteile für platzsparenden Einsatz |
US9653327B2 (en) | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
US8861167B2 (en) | 2011-05-12 | 2014-10-14 | Global Plasma Solutions, Llc | Bipolar ionization device |
JP5172993B2 (ja) * | 2011-06-10 | 2013-03-27 | シャープ株式会社 | テクスチャ構造の形成方法および太陽電池の製造方法 |
US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
TWI525887B (zh) * | 2011-11-14 | 2016-03-11 | 財團法人金屬工業研究發展中心 | 導氣電極板 |
KR101339981B1 (ko) | 2011-11-29 | 2013-12-11 | (주)티티에스 | 기판 지지 모듈 |
US9165788B2 (en) | 2012-04-06 | 2015-10-20 | Novellus Systems, Inc. | Post-deposition soft annealing |
US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
US9117668B2 (en) * | 2012-05-23 | 2015-08-25 | Novellus Systems, Inc. | PECVD deposition of smooth silicon films |
US9388491B2 (en) | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
US8895415B1 (en) | 2013-05-31 | 2014-11-25 | Novellus Systems, Inc. | Tensile stressed doped amorphous silicon |
KR102298032B1 (ko) * | 2013-09-30 | 2021-09-02 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 주파수 무선 주파수에 대한 전극 임피던스를 튜닝하고 저 주파수 무선 주파수를 접지로 종단하기 위한 장치 및 방법 |
US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
JP6497248B2 (ja) * | 2015-07-13 | 2019-04-10 | 住友電気工業株式会社 | ウェハ保持体 |
WO2017184223A1 (en) * | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
WO2018115335A1 (de) * | 2016-12-23 | 2018-06-28 | Plasmatreat Gmbh | Düsenanordnung und vorrichtung zur erzeugung eines atmosphärischen plasmastrahls |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US10304663B1 (en) | 2018-07-19 | 2019-05-28 | Lam Research Corporation | RF generator for generating a modulated frequency or an inter-modulated frequency |
GB201813467D0 (en) * | 2018-08-17 | 2018-10-03 | Spts Technologies Ltd | Method of depositing silicon nitride |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN111321391A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 用于半导体制造的喷头 |
US11515123B2 (en) * | 2018-12-21 | 2022-11-29 | Advanced Energy Industries, Inc. | Apparatus and system for modulated plasma systems |
US11804362B2 (en) * | 2018-12-21 | 2023-10-31 | Advanced Energy Industries, Inc. | Frequency tuning for modulated plasma systems |
JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
US11332827B2 (en) * | 2019-03-27 | 2022-05-17 | Applied Materials, Inc. | Gas distribution plate with high aspect ratio holes and a high hole density |
CN113445029A (zh) * | 2020-03-25 | 2021-09-28 | 拓荆科技股份有限公司 | 双面沉积设备及方法 |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4284489A (en) * | 1978-09-28 | 1981-08-18 | Coulter Systems Corporation | Power transfer network |
US4207137A (en) * | 1979-04-13 | 1980-06-10 | Bell Telephone Laboratories, Incorporated | Method of controlling a plasma etching process by monitoring the impedance changes of the RF power |
US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
US4695700A (en) * | 1984-10-22 | 1987-09-22 | Texas Instruments Incorporated | Dual detector system for determining endpoint of plasma etch process |
AT388814B (de) * | 1985-11-15 | 1989-09-11 | Paar Anton Kg | Verfahren und vorrichtung zum erzeugen eines hf-induzierten edelgasplasmas |
US4947085A (en) * | 1987-03-27 | 1990-08-07 | Mitsubishi Denki Kabushiki Kaisha | Plasma processor |
JPH0630351B2 (ja) * | 1987-03-31 | 1994-04-20 | 株式会社東芝 | 半導体製造装置のクリ−ニング終点判定方法 |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US5121067A (en) * | 1987-10-06 | 1992-06-09 | Board Of Regents Of Leland Stanford University | Directional sampling bridge |
US5378939A (en) * | 1987-10-06 | 1995-01-03 | The Board Of Trustees Of The Leland Stanford Junior University | Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 Ghz |
US5267020A (en) * | 1987-10-06 | 1993-11-30 | Stanford University | Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 ghz |
US5352994A (en) * | 1987-10-06 | 1994-10-04 | The Board Of Trustees Of The Leland Stanford Junior University | Gallium arsenide monolithically integrated nonlinear transmission line impedance transformer |
US5256996A (en) * | 1987-10-06 | 1993-10-26 | The Board Of Trustees Of The Leland Stanford, Junior University | Integrated coplanar strip nonlinear transmission line |
JPH0791645B2 (ja) * | 1989-04-28 | 1995-10-04 | 株式会社日立製作所 | 薄膜形成装置 |
JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
DE69032952T2 (de) * | 1989-11-15 | 1999-09-30 | Kokusai Electric Co Ltd | Trocken-Behandlungsvorrichtung |
US5155547A (en) * | 1990-02-26 | 1992-10-13 | Leco Corporation | Power control circuit for inductively coupled plasma atomic emission spectroscopy |
US5238630A (en) | 1990-02-26 | 1993-08-24 | The Dow Chemical Company | In-mold labeling method |
US5888414A (en) * | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
US5189343A (en) * | 1991-08-27 | 1993-02-23 | Everbrite, Inc. | High frequency luminous tube power supply having neon-bubble and mercury-migration suppression |
EP0605980A3 (de) * | 1993-01-07 | 1995-08-02 | Ramtron Int Corp | Verfahren zur Ablagerung von Silizium-Nitrid und Silizium-Oxynitride schichten. |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5364522A (en) * | 1993-03-22 | 1994-11-15 | Liang Wang | Boride, carbide, nitride, oxynitride, and silicide infiltrated electrochemical ceramic films and coatings and the method of forming such |
EP0653501B1 (de) * | 1993-11-11 | 1998-02-04 | Nissin Electric Company, Limited | Plasma-CVD-Verfahren und Vorrichtung |
US5556549A (en) * | 1994-05-02 | 1996-09-17 | Lsi Logic Corporation | Power control and delivery in plasma processing equipment |
US5474648A (en) * | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
US5968379A (en) * | 1995-07-14 | 1999-10-19 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability and related methods |
US5633073A (en) * | 1995-07-14 | 1997-05-27 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and eutectic connection |
JP3663716B2 (ja) * | 1996-02-05 | 2005-06-22 | 株式会社日立製作所 | 四重極イオン蓄積リング |
KR100193862B1 (ko) * | 1996-03-19 | 1999-06-15 | 윤종용 | 안정된 주파수를 얻기 위한 주파수변환기 |
US5994209A (en) * | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
-
1997
- 1997-12-01 US US08/980,520 patent/US6098568A/en not_active Expired - Lifetime
-
1998
- 1998-11-25 JP JP2000523403A patent/JP4365528B2/ja not_active Expired - Lifetime
- 1998-11-25 WO PCT/US1998/024928 patent/WO1999028533A1/en active IP Right Grant
- 1998-11-25 EP EP98960368A patent/EP1036214B1/de not_active Expired - Lifetime
- 1998-11-25 DE DE69819030T patent/DE69819030T2/de not_active Expired - Fee Related
- 1998-11-25 KR KR1020007005979A patent/KR100583606B1/ko not_active IP Right Cessation
- 1998-11-27 TW TW087119769A patent/TW407304B/zh not_active IP Right Cessation
-
2000
- 2000-06-02 US US09/585,258 patent/US6358573B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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WO1999028533A1 (en) | 1999-06-10 |
KR100583606B1 (ko) | 2006-05-26 |
US6358573B1 (en) | 2002-03-19 |
JP2001525604A (ja) | 2001-12-11 |
EP1036214A1 (de) | 2000-09-20 |
JP4365528B2 (ja) | 2009-11-18 |
DE69819030T2 (de) | 2004-06-24 |
KR20010032695A (ko) | 2001-04-25 |
EP1036214B1 (de) | 2003-10-15 |
TW407304B (en) | 2000-10-01 |
US6098568A (en) | 2000-08-08 |
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