DE69803932T2 - Verfahren und anlage zur steuerung der züchtung eines siliziumkristalls - Google Patents

Verfahren und anlage zur steuerung der züchtung eines siliziumkristalls

Info

Publication number
DE69803932T2
DE69803932T2 DE69803932T DE69803932T DE69803932T2 DE 69803932 T2 DE69803932 T2 DE 69803932T2 DE 69803932 T DE69803932 T DE 69803932T DE 69803932 T DE69803932 T DE 69803932T DE 69803932 T2 DE69803932 T2 DE 69803932T2
Authority
DE
Germany
Prior art keywords
breeding
controlling
silicon crystal
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69803932T
Other languages
English (en)
Other versions
DE69803932D1 (de
Inventor
Massoud Javidi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69803932D1 publication Critical patent/DE69803932D1/de
Application granted granted Critical
Publication of DE69803932T2 publication Critical patent/DE69803932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69803932T 1997-07-17 1998-07-08 Verfahren und anlage zur steuerung der züchtung eines siliziumkristalls Expired - Lifetime DE69803932T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/896,177 US5846318A (en) 1997-07-17 1997-07-17 Method and system for controlling growth of a silicon crystal
PCT/US1998/014208 WO1999004066A1 (en) 1997-07-17 1998-07-08 Method and system for controlling growth of a silicon crystal

Publications (2)

Publication Number Publication Date
DE69803932D1 DE69803932D1 (de) 2002-03-28
DE69803932T2 true DE69803932T2 (de) 2002-11-28

Family

ID=25405756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69803932T Expired - Lifetime DE69803932T2 (de) 1997-07-17 1998-07-08 Verfahren und anlage zur steuerung der züchtung eines siliziumkristalls

Country Status (9)

Country Link
US (1) US5846318A (de)
EP (1) EP1002144B1 (de)
JP (1) JP4253117B2 (de)
KR (1) KR100491392B1 (de)
CN (1) CN1202290C (de)
DE (1) DE69803932T2 (de)
MY (1) MY118719A (de)
TW (1) TWI223679B (de)
WO (1) WO1999004066A1 (de)

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CN102995111B (zh) * 2012-11-07 2015-05-27 北京七星华创电子股份有限公司 单晶炉非接触式硅料液面位置测量方法及装置
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KR101895131B1 (ko) * 2016-12-28 2018-10-18 경북대학교 산학협력단 단결정 성장로의 잉곳 직경 측정 방법
JP7082550B2 (ja) * 2018-09-20 2022-06-08 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法
JP6935790B2 (ja) * 2018-10-15 2021-09-15 株式会社Sumco 石英るつぼ内周面の評価方法及び石英るつぼ内周面の評価装置
CN112488980A (zh) * 2019-08-20 2021-03-12 隆基绿能科技股份有限公司 一种熔料状态检测方法、装置及设备
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KR102147461B1 (ko) * 2019-01-17 2020-08-24 에스케이실트론 주식회사 단결정 잉곳 성장 장치
CN111429508B (zh) * 2020-03-19 2021-08-31 亚洲硅业(青海)股份有限公司 硅芯炉控制系统及方法
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CN116732604A (zh) * 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备
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Also Published As

Publication number Publication date
KR20010021831A (ko) 2001-03-15
JP2001510141A (ja) 2001-07-31
KR100491392B1 (ko) 2005-05-24
DE69803932D1 (de) 2002-03-28
MY118719A (en) 2005-01-31
EP1002144A1 (de) 2000-05-24
TWI223679B (en) 2004-11-11
JP4253117B2 (ja) 2009-04-08
CN1268194A (zh) 2000-09-27
US5846318A (en) 1998-12-08
EP1002144B1 (de) 2002-02-20
WO1999004066A1 (en) 1999-01-28
CN1202290C (zh) 2005-05-18

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