TW201232691A - Equipment and operation method for enhancing throughput of wafer rapid thermal processing - Google Patents
Equipment and operation method for enhancing throughput of wafer rapid thermal processing Download PDFInfo
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Λ 201232691 六、發明說明: 【發明所屬之技術領域】 而能同時承載複數個石墨承栽 可同日Τ]·谷納不同尺寸、數量之 本發明涉及一種提升晶圓快速熱處理產能之設備與操 法,尤其是改變卡式盒的結構, ”、 盤,該石墨承盤上又具有刻槽, 晶圓。 【先前技術】Λ 201232691 VI. Description of the invention: [Technical field of invention] It is possible to carry a plurality of graphite substrates at the same time. The present invention relates to a device and a method for improving the rapid heat treatment capacity of a wafer. , in particular, changing the structure of the cartridge, ", the disc, which has a groove, a wafer on the graphite retainer. [Prior Art]
參閱第-圖及第二圖’分別為習用技術快速熱處理 的上視圖及習職術快速熱處理之操作方法的流程圖 圖所示,習用技術快速熱處理之設備i包含基座本體10 > -製知腔體20、裝載端35、卸載端45、機械手臂50、 暨分離裝Ϊ 65、前端操控介面7〇以及仏裝置9() 45 同時參鮮—圖及第二圖,f肖技術快速熱處 法s卜包含:裝載步驟su,將晶圓裝载 ^ 1 = 5’=晶圓放置於一石墨承載盤(未4:圓定= ^置9〇1 ^手l5G麵賴㈣的石縣鋪放到定 5 ΊϊΓίΐί裝載晶圓的石墨承載盤從製程腔體20中取 出並擺放至5亥冷部暨分離褒置65上,以 3===步驟523’以該冷卻暨分:’置65將 至蝴麵;似__,細圓放 習用技術的快速鱗理之設備及操作方法,具扣下所述[s] 3 201232691 的缺點,例如,單位時間僅能處理單一晶圓, gif: ί L僅有一前端操控介面70,當欲進行檢i 不便,另外,當使用-段時間,若各元= 題,而影_產能、品ίί及作财可能發生破片的問 快速=理' μ提高產能的晶圓 【發明内容】 處理產能之設備包含至少一製藉握一:斤阳圓厌迷熱 控介面、以及一後端# 、基座本體、一前端操 土”裝載端、卸載端、機械手臂以及 “ 製程杈組係容置於基座本體中二〇x v 快球埶#掙.兮4方止壓體汗染,用以進行 以設定自動製程參數,ji發出 之月心’用 主主^在雜座本體的後端,用以提供—手動摔抑介Η 一 +手動操控介面,以設定手_ =私控^丨面或 訊號或-转倫〜參數並發出—手動執行 行w時、隹-,f #u ’該至少一製程模組接收該自動化執 ::夺進仃自動化連續生產,而在該至少-製程槿 ΐ半手動執行訊號時,執行手動U ίΧΐ :式盒,該複合卡式盒中丨:,式 盤,該等多片式石置石莽血—稷個夕片式石墨承載 且右相η·+. τ· 1承載盤的母一個尺寸相同,但每一個可以 趙1不同的刻槽,以裝載各種尺寸的晶圓。她丰劈且 有方疋轉、伸縮及升降功能 日圓機械手臂具 出及放置動作。用進们玄多片式石墨承載盤的取 機械手臂從裝载端的開σ取出該等多片式石墨承載盤的卜] 4 201232691 其=之放置到該等製程腔體的支撐 式石墨承载盤從該等製= 般上取出’放置於遠冷卻裝置上,在該多石^ Γρ後’該機械手臂將該多片式石墨承ΐίί ^部裝置直接*卸載端的開σ放置到該至少盤, =一步提升產能,可以在同—製程模組言為 2該機酬雜,伽 本^提升晶’速熱處理產能之操作方法的包含 驟^^ 驟、熱處理步驟、冷卻步驟,以及卸ίί 此在衣载及疋心步驟中,預先將晶圓裝載在 二的刻槽t,並裝載在作為裝載端的複合式卡式/ t驟時’僅需以機械手臂從裝載端取出裝載^少二圓 盤;錢處理步驟中,以該機械手臂將; 械手料進行快4 臂以熱對流或熱傳‘進= 載盤放入作為卸載端的另一複合式卡式各中。 墨表 本發明的優點在於,藉由j[接料^盒設計魏夠容 而,式石墨承載盤能夠承载各種尺寸的晶 容性‘升’更提⑥了生產製程的彈性與設備相 Η圓取出與放置的步驟,而能夠節省製程時 間,亚減少晶圓的破片機率。 了 【實施方式】 的合圖式及元件符號對本創作之實施方式做更詳細 的^,俾使熟習_技藝者在研讀本綱錢能據以實施。 ,閱第二圖、第4A圖以及第4B gj,分別為本發明提升。 5 201232691Referring to the first and second figures, respectively, the top view of the rapid thermal processing of the conventional technology and the flow chart of the operation method of the rapid thermal processing of the conventional technology, the device i for the rapid thermal processing of the conventional technology includes the base body 10 > The cavity 20, the loading end 35, the unloading end 45, the robot arm 50, the detaching device 65, the front-end control interface 7〇, and the 仏 device 9() 45 are simultaneously fresh-figure-second and the second figure The method s contains: loading step su, loading the wafer ^ 1 = 5' = wafer placed on a graphite carrier (not 4: round = ^ set 9〇 1 ^ hand l5G face (four) of Shi County The graphite carrier disk placed on the fixed wafer is taken out from the process chamber 20 and placed on the 5H cold portion and the separation device 65, with 3===Step 523' to the cooling cum: Set 65 to the butterfly surface; like __, the fine-grained technology of the fast-scale equipment and operation method, with the shortcomings of [s] 3 201232691, for example, can only process a single wafer per unit time, Gif: ί L has only one front-end control interface 70, when it is not convenient to check, in addition, when using - paragraph time, if each element = Problem, and _ _ capacity, product ίί and fortune may occur fragmentation fast = rational 'μ increase productivity of the wafer [invention content] processing capacity equipment contains at least one system borrowing one: jinyangyuan tired of thermal control Interface, and a back end #, base body, a front end of the "loading end", the unloading end, the robot arm and the "process 杈 group system is placed in the base body of the two xv fastball 埶 # earn. 兮 4 side The stop body is dyed and used to set the automatic process parameters. The moon is sent by the main master. The back end of the main body is used to provide - manual drop control + manual control interface to set Hand _ = private control ^ face or signal or - transfer lun ~ parameters and issued - manually execute line w, 隹 -, f #u ' The at least one process module receives the automation:: 夺 仃 仃 automated continuous production And in the at least-process 槿ΐ semi-manual execution of the signal, the manual U Χΐ 式 : type box, the composite cassette 丨:, the type of disc, the multi-piece stone set stone 稷 稷 稷 夕 夕 夕The graphite is carried and the right phase η·+. τ·1 is the same size of the mother of the carrier, but each one can Zhao 1 has different grooves to load wafers of various sizes. She is rich and has a twirling, telescopic and lifting function. The Japanese mechanical arm has a placement and placement action. The arm removes the multi-piece graphite carrier from the opening σ of the loading end. 4 201232691 The supported graphite carrier plate placed in the process chambers is removed from the system. On the device, after the multi-stone ^ Γ ρ, the mechanical arm places the opening σ of the multi-piece graphite bearing ΐίί ^ unit directly* the unloading end to the at least disk, = one step to increase the production capacity, which can be in the same-process module For the operation of the machine, the method of the gamma-enhanced crystallization heat treatment capacity includes the steps, the heat treatment step, the cooling step, and the unloading. In the step of the on-load and the centering, the wafer is loaded in advance. In the groove t of the second, and loaded in the composite card type as the loading end, it is only necessary to remove the loading disk from the loading end by the robot arm; in the money processing step, the mechanical arm will be used; Handle for fast 4 arms with heat convection or Pass' = platen placed into a further compound of the unloading end of each cassette. Ink meter The invention has the advantages that the graphite carrying tray can carry various sizes of crystal-capacitance 'l' by means of the design of the material, and the elasticity of the production process is relatively round. The steps of taking out and placing can save process time and reduce the fragmentation probability of the wafer. [Embodiment] The combination of the figure and the component symbol makes the implementation of this creation more detailed, so that the skilled person can implement it according to the research. , see the second picture, the 4A picture and the 4B gj, respectively, for the improvement of the invention. 5 201232691
决速熱處理產能之設備第_實施例的上視圖,以及本發明 ^載端及卸載端的實例立體圖。如第三圖所示,本發明提升曰 固快,處理產能之設備2包含至少—製程模組、__基座^ 、一前端操控介面70、以及一後端操控介面8〇,該至少一 包含至少一製程腔體20、裝載端30、卸載端40、機 以齡卻裝置60。該至少—製程模組係容置於基座 操#入’=止^體汗染’用以進行快速熱處理;該前端 程ϋ if置在該_本體10之前端,用以設定自動製 晋二5盆亚毛出一自動化執行訊號;該後端操控介面8〇,設 手體10的後端’用以提供一手動操控介面或一半 面’以奴手動製程參數’並發出-手動執行臂 i;ii =ί=至少一製程模組接收該自動化執“ 半手動執行訊號時’執行手動模式生產或半手動A top view of the apparatus of the present invention, and an example of the carrier end and the unloading end of the present invention. As shown in the third figure, the present invention improves the tamping fast, and the processing capacity device 2 includes at least a process module, a __ base ^, a front end manipulation interface 70, and a back end manipulation interface 8 〇, the at least one The apparatus 60 includes at least one process chamber 20, a loading end 30, an unloading end 40, and a machine-aged device 60. The at least one process module is placed on the pedestal operation, and the front end is placed at the front end of the _ body 10 for setting the automatic nucleus The basin armature produces an automated execution signal; the back end manipulation interface is 8〇, and the rear end of the hand body 10 is provided to provide a manual manipulation interface or a half-face to slave manual process parameters and issue-manually execute the arm i; Ii = ί=At least one process module receives the automatic execution "When semi-manual execution signal" performs manual mode production or semi-manual
-次後端操控介面82,用以對每一製 -J:1 J5又J 數或是進行訊號測試、批次量i母^腔⑽疋手動製程參 努程4A圖及第4b圖,該製程模組包含 二矛月工體20、裝載知3〇、卸載端4〇、機械 裝置60,該製程腔體2〇係用以進行快速熱處理 :令 體20能以環狀、平行、陣列或多岸 妯 等I私月工 及卸载端*的每-個都是—複合式卡‘, 分層地容置複數個多片式石墨承载盤200二亥等=^ 載盤200的每-個之外觀幾何尺寸均 墨f- a secondary back-end control interface 82 for performing a signal test for each system - J: 1 J5 and J number, batch quantity i mother cavity (10), manual process process 4A picture and 4b picture, The process module comprises a two-mirror body 20, a loading mechanism 3, an unloading end 4〇, a mechanical device 60, and the processing chamber 2 is used for rapid heat treatment: the body 20 can be ring-shaped, parallel, array or Each of the I-months and the unloading end* of the multi-bank 都是 is a composite card, and the multi-piece graphite carrier 200 is placed hierarchically in a layered manner. ^^ Each of the trays 200 The appearance of the geometric dimensions are ink f
承雜盤上可以規劃為具有相同或 石J 用以進行該多>{式石墨承載盤 巧及升降功能, 〇〇及該至少-晶圓2〇2、撕以=石墨承載 機械手臂5〇從裝載端3〇的開口墨 裝置_峨行軸速熱退火處^及放置該冷= 盤200及該至少一晶圓2〇2、亥^式石墨承載 r 1The bearing plate can be planned to have the same or stone J for performing the multi->{type graphite carrier disk and lifting function, and the at least - wafer 2 〇 2, tearing = graphite bearing robot arm 5 〇 From the loading end 3〇 open ink device _ 轴 line speed thermal annealing ^ and place the cold = disk 200 and the at least one wafer 2 〇 2, Hai ^ type graphite bearing r 1
·) J 6 201232691 承載盤200的其中之—, 定位點(未顯示)上,而在淮放\到^等製程腔體20的支樓架的 石恭般9nn 而在進仃快速熱退火處理後,將該多片式 ίίΪ6〇Τ;^ 20^ 204,4 奘罟20亩垃將该多片式石墨承載盤200從該 二中:it載;4〇的開口 41放置到該至少-卸載 形及多邊型的其H墨承載盤2GG可為圓形、橢圓形、矩 - ^ 本翻提升晶®快速減理產能之設備中進 片感Γ益或一射頻識別讀取器(未顯示),而該多 =式私载知30上,即複合式卡式盒,上進一步設置一 (未顯示),以使進行裝載或快速熱處理前能 句猎由,、胃枓庫連線通訊’而讀取需要 入的錯',達到全自動化的功能。 之充人輸 &圖i第六圖’分別為本發明提升晶圓快速熱處理 ^月b之议備第一實施例及第三實施例的上視圖,如第五圖及第 ίί所了進—步提升產能’本發明提升晶圓快速熱處理 ^月b之S又備3可以在同一製程模組中,設置移動執道55,以 ,動該機械手臂50移動,或是本發明提升晶圓快速熱處理產 能之設備4在同一基座本體中設置多組製程模組。 參閱第七圖,本發明定位治具的立體圖。如第七圖所示, 在本發明的裝載端30或卸載端40的底部32/42上,包含一定 位治具100 ’用以判定尺寸、數量以及空片位置,該定位治具 100為一導引元件1〇1、一致動元件1〇3、以及至少一感測元 件105、107之組合,該導引元件101與該致動元件1〇3連接, 以s亥致動元件103移動該導引元件ιοί,而該感測元件1〇5為 一光電感測元件、而該感測元件107為一壓力感測元件,用二 感測該導引元件101的位置。 參閱第八圖,本發明提升晶圓快速熱處理產能之操作方法 的流程圖。如第八圖所示’本發明提升晶圓快速熱處理產能之 201232691 .定心步驟S3〗中,“H載步驟咖’在裝載及 並裝載在作為裝載端的複石盤的刻槽中, ^在熱處理步驟…,以^載 至少-晶圓的該多片戎石置X㈣二出取出之裝载該 快速熱處理;在冷卻步驟S3 、製耘腔體中進行一 裝載該至少二晶圓的該熱 t部裝置上’以熱對流或熱傳的方式進行冷1於一 ,S39中,以該機械手臂將 丁^二载步 式石墨承載盤放入作為卸載端,^^ 的该多片·) J 6 201232691 The carrier plate 200 is located on the positioning point (not shown), and in the truss of the process chamber 20 such as the Huaifang\~^, the stone frame is 9nn and is rapidly thermally annealed. Thereafter, the multi-piece ί Ϊ 〇Τ ^ 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 The shape and the polygon type of the H ink carrier tray 2GG can be round, elliptical, and moment - ^ This is a device that can quickly reduce the capacity of the product and a radio frequency identification reader (not shown) And the multi-type privately-known 30, that is, the composite cassette, further set a (not shown), so that before the loading or rapid heat treatment can be used, the stomach sputum connection communication Read the error that needs to be entered, to achieve fully automated functions. The sixth figure of the figure i is the top view of the first embodiment and the third embodiment of the present invention for improving the rapid thermal processing of the wafer, respectively, as shown in the fifth figure and the ίί - Step to increase the capacity'. The invention improves the rapid thermal processing of the wafer. The S and the 3 can be placed in the same process module, and the mobile obstruction 55 is set to move the robot arm 50, or the wafer is lifted by the present invention. The equipment for rapid heat treatment capacity 4 sets a plurality of sets of process modules in the same base body. Referring to the seventh figure, a perspective view of the positioning fixture of the present invention is shown. As shown in the seventh figure, on the bottom end 32/42 of the loading end 30 or the unloading end 40 of the present invention, a positioning jig 100' is included for determining the size, the number, and the position of the blank. The positioning jig 100 is a a guiding element 1〇1, an actuating element 1〇3, and a combination of at least one sensing element 105, 107, the guiding element 101 being connected to the actuating element 1〇3, wherein the actuating element 103 moves The sensing element 〇5 is a photo-sensing element, and the sensing element 107 is a pressure sensing element, and the position of the guiding element 101 is sensed by two. Referring to the eighth figure, a flow chart of the operation method for improving the rapid heat treatment capacity of the wafer of the present invention is shown. As shown in the eighth figure, the present invention improves the rapid thermal processing capacity of the wafer in 201232691. In the centering step S3, the "H-loading step coffee" is loaded and loaded in the groove of the multi-stone disk as the loading end, ^ in the heat treatment Steps: loading the plurality of meteorites at least - the wafers by X (four) and taking out the rapid thermal processing; and performing the heat loading of the at least two wafers in the cooling step S3 and the crucible cavity The unit is cooled by heat convection or heat transfer in one, S39, and the mechanical arm is used to put the D-type two-step graphite carrier tray into the unloading end, the multiple pieces of the ^^
片气點在於’藉由直接將卡式;設C能中夠容P 私的彈性與&備相雜,並且㉟ 產製 的步驟,進而夠節省製程時間,及減少晶圓的與ΐ置 由增加後端操控介面,改善維修或測試的方便性片機+。更藉 據:===明二 =非企圖 明—變更,== 【圖式簡單說明】 第-圖係習用技術快速熱處理之設備的上視圖。 圖係習用技術快速熱處理之操作方法的流程圖。 施例的^見圖圖係本發明提升晶圓快速熱處理產能之設備第一實 圖。第4A圖及第4B圖係本發明裝载端及卸載端的實例立體 [S] 8 201232691 第五圖係本發明提升晶圓快速熱處理產 施例的上視圖。 X攝第二實 第/、圖係本發明提升晶圓快速熱處理產能之 施例的上視圖。 w有弟二貫 第七圖係本發明定位治具的立體圖。 第八圖係本發明提升晶圓快速熱處理產能之操作方法的 流程圖。 【主要元件符號說明】 1 習用技術快速熱處理之設備 2 本發明提升晶圓快速熱處理產能之設備 3 本發明提升晶圓快速熱處理產能之設備 4 本發明提升晶圓快速熱處理產能之設備 10 基座本體 20 製程腔體 30 裝載端 31 開口 32 底部 35 裝載端The film point is 'by directly inserting the card type; setting the C-capability of P-private flexibility and & preparation, and 35 production steps, thereby saving process time and reducing wafers and placement By adding a back-end control interface, the convenience of the repair or test is improved. More information: === Ming 2 = non-intentional - change, == [Simple description of the diagram] The first diagram is a top view of the equipment for rapid heat treatment of the conventional technology. The figure is a flow chart of the operation method of the rapid heat treatment of the conventional technology. The figure of the embodiment is shown in the first figure of the apparatus for improving the rapid heat treatment capacity of the wafer. 4A and 4B are example views of the loading end and the unloading end of the present invention [S] 8 201232691 The fifth drawing is a top view of the present invention for improving the rapid heat treatment of the wafer. The second photo of X is the top view of the embodiment of the invention for improving the rapid heat treatment capacity of the wafer. w has a second division The seventh figure is a perspective view of the positioning fixture of the present invention. The eighth figure is a flow chart of the operation method of the present invention for improving the rapid heat treatment capacity of a wafer. [Major component symbol description] 1 Conventional technology rapid heat treatment equipment 2 The invention improves the wafer rapid heat treatment capacity equipment 3 The invention improves the wafer rapid heat treatment capacity equipment 4 The invention improves the wafer rapid heat treatment capacity equipment 10 Base body 20 Process chamber 30 Load end 31 Opening 32 Bottom 35 Loading end
40 卸載端 41 開口 42 底部 45 卸載端 50 機械手臂 60 冷卻裝置 65 冷卻暨分離裝置 70 前端操控介面 80 後端操控介面 次後端操控介面 定心裴置 90 201232691 100 定位治具 101 導引元件 103 致動元件 105 感測元件 107 感測元件 S1 習用技術快速熱處理之操作方法 S11 裝載步驟 S13 取出步驟 S15 擺放步驟 S17 定心步驟 S19 熱處理步驟 S21 冷卻步驟 S23 分離步驟 S25 卸載步驟 S3 提升晶圓快速熱處理產能之操作方法 S31 裝載及定心步驟 S33 取出步驟 S35 熱處理步驟 S37 冷卻步驟 S39 卸載步驟40 Unloading end 41 Opening 42 Bottom 45 Unloading end 50 Robot arm 60 Cooling device 65 Cooling and separating device 70 Front-end control interface 80 Rear-end control interface Secondary rear-end control interface Centering device 90 201232691 100 Positioning fixture 101 Guide element 103 Actuating element 105 sensing element 107 sensing element S1 conventional technique rapid heat treatment operation method S11 loading step S13 taking out step S15 placing step S17 centering step S19 heat treatment step S21 cooling step S23 separating step S25 unloading step S3 lifting the wafer fast Operation method of heat treatment capacity S31 Loading and centering step S33 Removal step S35 Heat treatment step S37 Cooling step S39 Unloading step
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