DE69717516T2 - Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung desselben - Google Patents

Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung desselben

Info

Publication number
DE69717516T2
DE69717516T2 DE69717516T DE69717516T DE69717516T2 DE 69717516 T2 DE69717516 T2 DE 69717516T2 DE 69717516 T DE69717516 T DE 69717516T DE 69717516 T DE69717516 T DE 69717516T DE 69717516 T2 DE69717516 T2 DE 69717516T2
Authority
DE
Germany
Prior art keywords
detecting
same
surface position
scanning exposure
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69717516T
Other languages
English (en)
Other versions
DE69717516D1 (de
Inventor
Takehiko Iwanaga
Yuichi Yamada
Shigeyuki Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06899896A external-priority patent/JP3754743B2/ja
Priority claimed from JP06899996A external-priority patent/JP3518826B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69717516D1 publication Critical patent/DE69717516D1/de
Application granted granted Critical
Publication of DE69717516T2 publication Critical patent/DE69717516T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69717516T 1996-03-01 1997-02-27 Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung desselben Expired - Lifetime DE69717516T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP06899896A JP3754743B2 (ja) 1996-03-01 1996-03-01 表面位置設定方法、ウエハ高さ設定方法、面位置設定方法、ウエハ面位置検出方法および露光装置
JP06899996A JP3518826B2 (ja) 1996-03-01 1996-03-01 面位置検出方法及び装置並びに露光装置

Publications (2)

Publication Number Publication Date
DE69717516D1 DE69717516D1 (de) 2003-01-16
DE69717516T2 true DE69717516T2 (de) 2003-07-31

Family

ID=26410182

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69738335T Expired - Lifetime DE69738335T2 (de) 1996-03-01 1997-02-27 Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung derselbe
DE69717516T Expired - Lifetime DE69717516T2 (de) 1996-03-01 1997-02-27 Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung desselben

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69738335T Expired - Lifetime DE69738335T2 (de) 1996-03-01 1997-02-27 Verfahren zur Detektion einer Oberflächenlage und Abtastbelichtungsverfahren unter Verwendung derselbe

Country Status (5)

Country Link
US (1) US5920398A (de)
EP (2) EP1195647B1 (de)
KR (1) KR100266729B1 (de)
DE (2) DE69738335T2 (de)
TW (1) TW341719B (de)

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JP3454497B2 (ja) * 1997-07-15 2003-10-06 キヤノン株式会社 投影露光方法および装置
US20060060781A1 (en) * 1997-08-11 2006-03-23 Masahiro Watanabe Charged-particle beam apparatus and method for automatically correcting astigmatism and for height detection
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US6057170A (en) * 1999-03-05 2000-05-02 Memc Electronic Materials, Inc. Method of measuring waviness in silicon wafers
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JP4725822B2 (ja) * 2000-07-10 2011-07-13 株式会社ニコン 光学的位置ずれ検出装置
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JP4613357B2 (ja) * 2000-11-22 2011-01-19 株式会社ニコン 光学的位置ずれ測定装置の調整装置および方法
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US6691052B1 (en) 2002-01-30 2004-02-10 Kla-Tencor Corporation Apparatus and methods for generating an inspection reference pattern
JP3913079B2 (ja) * 2002-02-28 2007-05-09 キヤノン株式会社 面位置検出装置及び方法並びに露光装置と該露光装置を用いたデバイスの製造方法
DE10253919B4 (de) * 2002-11-19 2004-09-23 Infineon Technologies Ag Verfahren zur Justage eines Substrates in einem Gerät zur Durchführung einer Belichtung
JP2004247487A (ja) * 2003-02-13 2004-09-02 Canon Inc 走査露光装置
JP4652667B2 (ja) * 2003-02-13 2011-03-16 キヤノン株式会社 面位置計測方法及び走査型露光装置
US7072024B2 (en) 2004-01-20 2006-07-04 Nikon Corporation Lithographic projection method and apparatus
US6980279B2 (en) 2004-01-22 2005-12-27 Nikon Corporation Interferometer system for measuring a height of wafer stage
JP2006305963A (ja) * 2005-04-28 2006-11-09 Seiko Epson Corp 画像処理、補正値取得方法、印刷装置製造方法及び印刷方法
KR100689841B1 (ko) * 2006-02-13 2007-03-08 삼성전자주식회사 반도체 제조장치용 레벨링 알고리듬 및 관련된 장치
US20110109889A1 (en) * 2006-12-21 2011-05-12 Asml Netherlands B.V. Method for positioning a target portion of a substrate with respect to a focal plane of a projection system
NL2004055C2 (en) * 2010-01-05 2011-07-06 Mapper Lithography Ip Bv Method for measuring target surface topology and lithography system.
CN103885295B (zh) * 2012-12-19 2016-09-28 上海微电子装备有限公司 一种曝光装置及其调焦调平方法
JP6299111B2 (ja) * 2013-08-28 2018-03-28 オムロン株式会社 レーザ加工装置
WO2017102237A1 (en) 2015-12-15 2017-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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Also Published As

Publication number Publication date
EP1195647A1 (de) 2002-04-10
EP0793073B1 (de) 2002-12-04
DE69738335D1 (de) 2008-01-10
KR100266729B1 (ko) 2000-09-15
EP0793073A2 (de) 1997-09-03
EP0793073A3 (de) 1998-09-30
TW341719B (en) 1998-10-01
EP1195647B1 (de) 2007-11-28
US5920398A (en) 1999-07-06
DE69717516D1 (de) 2003-01-16
KR970067748A (ko) 1997-10-13
DE69738335T2 (de) 2008-10-09

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