DE69717014D1 - Verfahren zur Herstellung einer Plasmaätzelektrode - Google Patents

Verfahren zur Herstellung einer Plasmaätzelektrode

Info

Publication number
DE69717014D1
DE69717014D1 DE69717014T DE69717014T DE69717014D1 DE 69717014 D1 DE69717014 D1 DE 69717014D1 DE 69717014 T DE69717014 T DE 69717014T DE 69717014 T DE69717014 T DE 69717014T DE 69717014 D1 DE69717014 D1 DE 69717014D1
Authority
DE
Germany
Prior art keywords
producing
plasma etching
etching electrode
electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69717014T
Other languages
English (en)
Other versions
DE69717014T2 (de
Inventor
Kazuo Saito
Yasushi Mochizuki
Akira Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nisshinbo Holdings Inc
Original Assignee
Nisshinbo Industries Inc
Nisshin Spinning Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nisshinbo Industries Inc, Nisshin Spinning Co Ltd filed Critical Nisshinbo Industries Inc
Publication of DE69717014D1 publication Critical patent/DE69717014D1/de
Application granted granted Critical
Publication of DE69717014T2 publication Critical patent/DE69717014T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69717014T 1996-06-28 1997-06-27 Verfahren zur Herstellung einer Plasmaätzelektrode Expired - Fee Related DE69717014T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18833696A JP3728021B2 (ja) 1996-06-28 1996-06-28 プラズマエッチング電極及びその製造方法

Publications (2)

Publication Number Publication Date
DE69717014D1 true DE69717014D1 (de) 2002-12-19
DE69717014T2 DE69717014T2 (de) 2003-04-03

Family

ID=16221839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717014T Expired - Fee Related DE69717014T2 (de) 1996-06-28 1997-06-27 Verfahren zur Herstellung einer Plasmaätzelektrode

Country Status (6)

Country Link
US (1) US5993597A (de)
EP (1) EP0817236B1 (de)
JP (1) JP3728021B2 (de)
KR (1) KR100483744B1 (de)
DE (1) DE69717014T2 (de)
TW (1) TW340239B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000068985A1 (fr) * 1999-05-06 2000-11-16 Tokyo Electron Limited Appareil de traitement au plasma
JP3744726B2 (ja) 1999-06-08 2006-02-15 信越化学工業株式会社 シリコン電極板
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
JP4540250B2 (ja) * 2001-04-25 2010-09-08 信越化学工業株式会社 プラズマ装置用電極板
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
CN100433270C (zh) * 2004-04-01 2008-11-12 株式会社上睦可 耐久性的等离子体蚀刻用硅电极板
JP4403919B2 (ja) * 2004-04-01 2010-01-27 株式会社Ｓｕｍｃｏ 耐久性に優れたプラズマエッチング用シリコン電極板
KR100749092B1 (ko) * 2005-02-01 2007-08-13 프리시젼다이아몬드 주식회사 플라즈마 식각장치에 장착되는 다이아몬드가 코팅된캐소우드 제조 방법 및 그 제조 방법에 의해 제조된캐소우드
JP4517363B2 (ja) * 2005-08-18 2010-08-04 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP4535283B2 (ja) * 2005-12-05 2010-09-01 三菱マテリアル株式会社 比抵抗値の面内バラツキが少ないプラズマエッチング用単結晶シリコン電極板
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
US20070284339A1 (en) * 2006-06-09 2007-12-13 Moore David O Plasma etching chamber parts made with EDM
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
JP2012028482A (ja) * 2010-07-22 2012-02-09 Mitsubishi Materials Corp プラズマエッチング用シリコン電極板
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5630710B2 (ja) * 2011-01-31 2014-11-26 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP5713182B2 (ja) * 2011-01-31 2015-05-07 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
TWI606512B (zh) 2012-12-27 2017-11-21 三菱綜合材料股份有限公司 電漿蝕刻裝置用矽構件及電漿蝕刻裝置用矽構件之製造方法
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144273A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Forming method of electrode in semiconductor device
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
JPH06177076A (ja) * 1992-12-02 1994-06-24 Nisshinbo Ind Inc プラズマエッチング用電極
JPH07273094A (ja) * 1994-04-01 1995-10-20 Hitachi Chem Co Ltd プラズマエッチング用電極板
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH10129605A (ja) * 1996-10-31 1998-05-19 O M Ltd 連続式トレーシール機

Also Published As

Publication number Publication date
EP0817236B1 (de) 2002-11-13
JP3728021B2 (ja) 2005-12-21
US5993597A (en) 1999-11-30
EP0817236A2 (de) 1998-01-07
EP0817236A3 (de) 1998-05-27
JPH1017393A (ja) 1998-01-20
KR100483744B1 (ko) 2005-07-28
TW340239B (en) 1998-09-11
DE69717014T2 (de) 2003-04-03
KR980005791A (ko) 1998-03-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee