TW340239B - Plasma etching electrode and the manufacturing process - Google Patents

Plasma etching electrode and the manufacturing process

Info

Publication number
TW340239B
TW340239B TW086108983A TW86108983A TW340239B TW 340239 B TW340239 B TW 340239B TW 086108983 A TW086108983 A TW 086108983A TW 86108983 A TW86108983 A TW 86108983A TW 340239 B TW340239 B TW 340239B
Authority
TW
Taiwan
Prior art keywords
plasma etching
etching electrode
manufacturing process
electrode
phosphur
Prior art date
Application number
TW086108983A
Other languages
English (en)
Inventor
Kazuo Saito
Akira Yamaguchi
Yasushi Mochizuki
Original Assignee
Nissei Boseki Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissei Boseki Kk filed Critical Nissei Boseki Kk
Application granted granted Critical
Publication of TW340239B publication Critical patent/TW340239B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW086108983A 1996-06-28 1997-06-26 Plasma etching electrode and the manufacturing process TW340239B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18833696A JP3728021B2 (ja) 1996-06-28 1996-06-28 プラズマエッチング電極及びその製造方法

Publications (1)

Publication Number Publication Date
TW340239B true TW340239B (en) 1998-09-11

Family

ID=16221839

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108983A TW340239B (en) 1996-06-28 1997-06-26 Plasma etching electrode and the manufacturing process

Country Status (6)

Country Link
US (1) US5993597A (zh)
EP (1) EP0817236B1 (zh)
JP (1) JP3728021B2 (zh)
KR (1) KR100483744B1 (zh)
DE (1) DE69717014T2 (zh)
TW (1) TW340239B (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7537672B1 (en) * 1999-05-06 2009-05-26 Tokyo Electron Limited Apparatus for plasma processing
JP3744726B2 (ja) 1999-06-08 2006-02-15 信越化学工業株式会社 シリコン電極板
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
JP4540250B2 (ja) * 2001-04-25 2010-09-08 信越化学工業株式会社 プラズマ装置用電極板
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
CN100433270C (zh) * 2004-04-01 2008-11-12 株式会社上睦可 耐久性的等离子体蚀刻用硅电极板
JP4403919B2 (ja) * 2004-04-01 2010-01-27 株式会社Ｓｕｍｃｏ 耐久性に優れたプラズマエッチング用シリコン電極板
KR100749092B1 (ko) * 2005-02-01 2007-08-13 프리시젼다이아몬드 주식회사 플라즈마 식각장치에 장착되는 다이아몬드가 코팅된캐소우드 제조 방법 및 그 제조 방법에 의해 제조된캐소우드
JP4517363B2 (ja) * 2005-08-18 2010-08-04 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP4535283B2 (ja) * 2005-12-05 2010-09-01 三菱マテリアル株式会社 比抵抗値の面内バラツキが少ないプラズマエッチング用単結晶シリコン電極板
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
US20070284339A1 (en) * 2006-06-09 2007-12-13 Moore David O Plasma etching chamber parts made with EDM
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
KR200464037Y1 (ko) 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
JP2012028482A (ja) * 2010-07-22 2012-02-09 Mitsubishi Materials Corp プラズマエッチング用シリコン電極板
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5713182B2 (ja) * 2011-01-31 2015-05-07 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP5630710B2 (ja) * 2011-01-31 2014-11-26 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
KR102115038B1 (ko) 2012-12-27 2020-05-25 미쓰비시 마테리알 가부시키가이샤 플라즈마 에칭 장치용 실리콘 부재 및 플라즈마 에칭 장치용 실리콘 부재의 제조 방법
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144273A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Forming method of electrode in semiconductor device
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
JPH06177076A (ja) * 1992-12-02 1994-06-24 Nisshinbo Ind Inc プラズマエッチング用電極
JPH07273094A (ja) * 1994-04-01 1995-10-20 Hitachi Chem Co Ltd プラズマエッチング用電極板
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH10129605A (ja) * 1996-10-31 1998-05-19 O M Ltd 連続式トレーシール機

Also Published As

Publication number Publication date
EP0817236A2 (en) 1998-01-07
US5993597A (en) 1999-11-30
JP3728021B2 (ja) 2005-12-21
KR980005791A (ko) 1998-03-30
EP0817236B1 (en) 2002-11-13
DE69717014T2 (de) 2003-04-03
EP0817236A3 (en) 1998-05-27
JPH1017393A (ja) 1998-01-20
KR100483744B1 (ko) 2005-07-28
DE69717014D1 (de) 2002-12-19

Similar Documents

Publication Publication Date Title
TW340239B (en) Plasma etching electrode and the manufacturing process
CA2221100A1 (en) Process for producing semiconductor article
EP1352922A3 (en) Thermally conductive formed article and method of manufacturing the same
CA2156465A1 (en) Clip and Method Therefor
HUP0101824A3 (en) Semiconductor process chamber electrode and method for making the same
IL66718A (en) Process for fabricating ribbed electrode substrates and other articles
EP0395017A3 (en) Plasma etching method
TW349247B (en) Process for producing semiconductor element
TW350094B (en) Process for producing semiconductor substrate
EP0614214A3 (en) Etching process for semiconductors.
CA2275298A1 (en) Semiconductor component, in particular a solar cell, and process for manufacture of same
TW269052B (en) Process for semiconductor wafer, semiconductor integrated circuit and devices thereof
GB2379802A (en) A method for forming a product sensor and a product sensor
EP0750335A3 (en) Polishing agent used for polishing semiconductor wafers and polishing method using the same
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
EP0246802A3 (en) Process for cleaning surface of semiconductor substrate
WO2003058679A3 (en) System and method of processing composite substrate within a high throughput reactor
TW340970B (en) Method to produce a MIS-structure on silicon carbonite
EP0928021A4 (en) MANUFACTURING METHOD FOR A SEMICONDUCTOR COMPONENT
JPS6466932A (en) Epitaxial silicon wafer
AU5277090A (en) Bipolar electrode and process for manufacturing same
TW370693B (en) Method for forming a contact to a substrate
JPS57102076A (en) Switching element
JPS5370687A (en) Production of semiconductor device
JPS6472533A (en) Manufacture of single crystal semiconductor substrate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees