US5313421A
(en)
*
|
1992-01-14 |
1994-05-17 |
Sundisk Corporation |
EEPROM with split gate source side injection
|
US7071060B1
(en)
*
|
1996-02-28 |
2006-07-04 |
Sandisk Corporation |
EEPROM with split gate source side infection with sidewall spacers
|
US5712180A
(en)
*
|
1992-01-14 |
1998-01-27 |
Sundisk Corporation |
EEPROM with split gate source side injection
|
US6222762B1
(en)
|
1992-01-14 |
2001-04-24 |
Sandisk Corporation |
Multi-state memory
|
US5657332A
(en)
*
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
WO1996024138A1
(fr)
*
|
1995-01-31 |
1996-08-08 |
Hitachi, Ltd. |
Dispositif de memoire remanente et procede de regeneration
|
TW318933B
(en)
*
|
1996-03-08 |
1997-11-01 |
Hitachi Ltd |
Semiconductor IC device having a memory and a logic circuit implemented with a single chip
|
US6320785B1
(en)
|
1996-07-10 |
2001-11-20 |
Hitachi, Ltd. |
Nonvolatile semiconductor memory device and data writing method therefor
|
JP3062730B2
(ja)
*
|
1996-07-10 |
2000-07-12 |
株式会社日立製作所 |
不揮発性半導体記憶装置および書込み方法
|
KR100224673B1
(ko)
*
|
1996-12-13 |
1999-10-15 |
윤종용 |
불휘발성 강유전체 메모리장치 및 그의 구동방법
|
US6097624A
(en)
*
|
1997-09-17 |
2000-08-01 |
Samsung Electronics Co., Ltd. |
Methods of operating ferroelectric memory devices having reconfigurable bit lines
|
US5835413A
(en)
*
|
1996-12-20 |
1998-11-10 |
Intel Corporation |
Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels
|
KR100219519B1
(ko)
*
|
1997-01-10 |
1999-09-01 |
윤종용 |
페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법
|
US5928370A
(en)
*
|
1997-02-05 |
1999-07-27 |
Lexar Media, Inc. |
Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
|
US6252799B1
(en)
*
|
1997-04-11 |
2001-06-26 |
Programmable Silicon Solutions |
Device with embedded flash and EEPROM memories
|
DE69723814D1
(de)
*
|
1997-05-09 |
2003-09-04 |
St Microelectronics Srl |
Verfahren und Vorrichtung zum Analogprogrammieren von nichtflüchtigen Speicherzellen, insbesondere für Flash-Speicherzellen
|
JP3517081B2
(ja)
*
|
1997-05-22 |
2004-04-05 |
株式会社東芝 |
多値不揮発性半導体記憶装置
|
US5909449A
(en)
*
|
1997-09-08 |
1999-06-01 |
Invox Technology |
Multibit-per-cell non-volatile memory with error detection and correction
|
KR100297874B1
(ko)
|
1997-09-08 |
2001-10-24 |
윤종용 |
강유전체랜덤액세스메모리장치
|
KR100339024B1
(ko)
*
|
1998-03-28 |
2002-09-18 |
주식회사 하이닉스반도체 |
플래쉬메모리장치의센스앰프회로
|
DE69832164T2
(de)
*
|
1998-08-07 |
2006-08-17 |
Stmicroelectronics S.R.L., Agrate Brianza |
Ausleseanordnung für Multibit-Halbleiterspeicheranordnung
|
US6185128B1
(en)
*
|
1999-10-19 |
2001-02-06 |
Advanced Micro Devices, Inc. |
Reference cell four-way switch for a simultaneous operation flash memory device
|
FR2801419B1
(fr)
|
1999-11-18 |
2003-07-25 |
St Microelectronics Sa |
Procede et dispositif de lecture pour memoire en circuit integre
|
US6304486B1
(en)
*
|
1999-12-20 |
2001-10-16 |
Fujitsu Limited |
Sensing time control device and method
|
US6215702B1
(en)
|
2000-02-16 |
2001-04-10 |
Advanced Micro Devices, Inc. |
Method of maintaining constant erasing speeds for non-volatile memory cells
|
US6243300B1
(en)
|
2000-02-16 |
2001-06-05 |
Advanced Micro Devices, Inc. |
Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell
|
US6266281B1
(en)
|
2000-02-16 |
2001-07-24 |
Advanced Micro Devices, Inc. |
Method of erasing non-volatile memory cells
|
US6477083B1
(en)
|
2000-10-11 |
2002-11-05 |
Advanced Micro Devices, Inc. |
Select transistor architecture for a virtual ground non-volatile memory cell array
|
US6583479B1
(en)
|
2000-10-16 |
2003-06-24 |
Advanced Micro Devices, Inc. |
Sidewall NROM and method of manufacture thereof for non-volatile memory cells
|
US6563741B2
(en)
|
2001-01-30 |
2003-05-13 |
Micron Technology, Inc. |
Flash memory device and method of erasing
|
US6493261B1
(en)
|
2001-01-31 |
2002-12-10 |
Advanced Micro Devices, Inc. |
Single bit array edges
|
US6344994B1
(en)
|
2001-01-31 |
2002-02-05 |
Advanced Micro Devices |
Data retention characteristics as a result of high temperature bake
|
US6442074B1
(en)
|
2001-02-28 |
2002-08-27 |
Advanced Micro Devices, Inc. |
Tailored erase method using higher program VT and higher negative gate erase
|
US6456533B1
(en)
|
2001-02-28 |
2002-09-24 |
Advanced Micro Devices, Inc. |
Higher program VT and faster programming rates based on improved erase methods
|
US6307784B1
(en)
|
2001-02-28 |
2001-10-23 |
Advanced Micro Devices |
Negative gate erase
|
US6584017B2
(en)
*
|
2001-04-05 |
2003-06-24 |
Saifun Semiconductors Ltd. |
Method for programming a reference cell
|
US6906951B2
(en)
*
|
2001-06-14 |
2005-06-14 |
Multi Level Memory Technology |
Bit line reference circuits for binary and multiple-bit-per-cell memories
|
US6512701B1
(en)
|
2001-06-21 |
2003-01-28 |
Advanced Micro Devices, Inc. |
Erase method for dual bit virtual ground flash
|
US7057935B2
(en)
*
|
2001-08-30 |
2006-06-06 |
Micron Technology, Inc. |
Erase verify for non-volatile memory
|
CN100433193C
(zh)
*
|
2002-01-16 |
2008-11-12 |
斯班逊有限公司 |
电荷注入方法
|
US6842381B2
(en)
*
|
2002-01-25 |
2005-01-11 |
Taiwan Semiconductor Manufacturing Co. |
Method of marginal erasure for the testing of flash memories
|
US6700815B2
(en)
*
|
2002-04-08 |
2004-03-02 |
Advanced Micro Devices, Inc. |
Refresh scheme for dynamic page programming
|
US6711062B1
(en)
*
|
2002-07-17 |
2004-03-23 |
Taiwan Semiconductor Manufacturing Company |
Erase method of split gate flash memory reference cells
|
JP3935139B2
(ja)
|
2002-11-29 |
2007-06-20 |
株式会社東芝 |
半導体記憶装置
|
US6898680B2
(en)
*
|
2003-01-03 |
2005-05-24 |
Micrel, Incorporated |
Minimization of overhead of non-volatile memory operation
|
US6735114B1
(en)
*
|
2003-02-04 |
2004-05-11 |
Advanced Micro Devices, Inc. |
Method of improving dynamic reference tracking for flash memory unit
|
JP2004348803A
(ja)
*
|
2003-05-20 |
2004-12-09 |
Sharp Corp |
不揮発性メモリ素子のプログラム検証方法および半導体記憶装置とそれを備えた携帯電子機器
|
US7023735B2
(en)
*
|
2003-06-17 |
2006-04-04 |
Ramot At Tel-Aviv University Ltd. |
Methods of increasing the reliability of a flash memory
|
US7324374B2
(en)
*
|
2003-06-20 |
2008-01-29 |
Spansion Llc |
Memory with a core-based virtual ground and dynamic reference sensing scheme
|
US6975535B2
(en)
*
|
2003-08-14 |
2005-12-13 |
Mosel Vitelic, Inc. |
Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
|
US7012835B2
(en)
*
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
US7173852B2
(en)
*
|
2003-10-03 |
2007-02-06 |
Sandisk Corporation |
Corrected data storage and handling methods
|
US7307884B2
(en)
|
2004-06-15 |
2007-12-11 |
Sandisk Corporation |
Concurrent programming of non-volatile memory
|
US7352618B2
(en)
*
|
2004-12-15 |
2008-04-01 |
Samsung Electronics Co., Ltd. |
Multi-level cell memory device and associated read method
|
US7395404B2
(en)
*
|
2004-12-16 |
2008-07-01 |
Sandisk Corporation |
Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
|
US7315916B2
(en)
*
|
2004-12-16 |
2008-01-01 |
Sandisk Corporation |
Scratch pad block
|
JP4336342B2
(ja)
*
|
2005-12-16 |
2009-09-30 |
シャープ株式会社 |
不揮発性半導体記憶装置
|
US7701779B2
(en)
*
|
2006-04-27 |
2010-04-20 |
Sajfun Semiconductors Ltd. |
Method for programming a reference cell
|
US7716538B2
(en)
*
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7886204B2
(en)
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
US7573773B2
(en)
*
|
2007-03-28 |
2009-08-11 |
Sandisk Corporation |
Flash memory with data refresh triggered by controlled scrub data reads
|
US7477547B2
(en)
*
|
2007-03-28 |
2009-01-13 |
Sandisk Corporation |
Flash memory refresh techniques triggered by controlled scrub data reads
|
US7787282B2
(en)
*
|
2008-03-21 |
2010-08-31 |
Micron Technology, Inc. |
Sensing resistance variable memory
|
US8130528B2
(en)
|
2008-08-25 |
2012-03-06 |
Sandisk 3D Llc |
Memory system with sectional data lines
|
US8027209B2
(en)
|
2008-10-06 |
2011-09-27 |
Sandisk 3D, Llc |
Continuous programming of non-volatile memory
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
US11961570B2
(en)
*
|
2018-06-26 |
2024-04-16 |
Vishal Sarin |
Methods and systems of cell-array programming for neural compute using flash arrays
|
CN111696607B
(zh)
*
|
2019-03-13 |
2022-05-17 |
力旺电子股份有限公司 |
可编程可抹除的非易失性存储器
|