DE69903966D1 - Wortleitungstreiber für flash eeprom - Google Patents

Wortleitungstreiber für flash eeprom

Info

Publication number
DE69903966D1
DE69903966D1 DE69903966T DE69903966T DE69903966D1 DE 69903966 D1 DE69903966 D1 DE 69903966D1 DE 69903966 T DE69903966 T DE 69903966T DE 69903966 T DE69903966 T DE 69903966T DE 69903966 D1 DE69903966 D1 DE 69903966D1
Authority
DE
Germany
Prior art keywords
flash eeprom
wordline driver
wordline
driver
eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69903966T
Other languages
English (en)
Other versions
DE69903966T2 (de
Inventor
S Bill
S Su
Takao Akaogi
P Gutala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69903966D1 publication Critical patent/DE69903966D1/de
Publication of DE69903966T2 publication Critical patent/DE69903966T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69903966T 1998-10-05 1999-09-21 Wortleitungstreiber für flash eeprom Expired - Lifetime DE69903966T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/166,385 US6134146A (en) 1998-10-05 1998-10-05 Wordline driver for flash electrically erasable programmable read-only memory (EEPROM)
PCT/US1999/021737 WO2000021094A1 (en) 1998-10-05 1999-09-21 Wordline driver for flash electrically erasable programmable read only memory (eeprom)

Publications (2)

Publication Number Publication Date
DE69903966D1 true DE69903966D1 (de) 2002-12-19
DE69903966T2 DE69903966T2 (de) 2003-09-18

Family

ID=22603075

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69903966T Expired - Lifetime DE69903966T2 (de) 1998-10-05 1999-09-21 Wortleitungstreiber für flash eeprom

Country Status (7)

Country Link
US (1) US6134146A (de)
EP (1) EP1116240B1 (de)
JP (1) JP2002527849A (de)
KR (1) KR100578581B1 (de)
DE (1) DE69903966T2 (de)
TW (1) TW454193B (de)
WO (1) WO2000021094A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351420B1 (en) 2000-02-07 2002-02-26 Advanced Micro Devices, Inc. Voltage boost level clamping circuit for a flash memory
US6243316B1 (en) * 2000-02-09 2001-06-05 Advanced Micro Devices, Inc. Voltage boost reset circuit for a flash memory
US6717851B2 (en) * 2000-10-31 2004-04-06 Sandisk Corporation Method of reducing disturbs in non-volatile memory
US6469942B1 (en) * 2001-07-31 2002-10-22 Fujitsu Limited System for word line boosting
JP4142685B2 (ja) * 2003-06-05 2008-09-03 スパンション エルエルシー 冗長メモリのブースタ回路を有する半導体メモリ
US8445946B2 (en) * 2003-12-11 2013-05-21 International Business Machines Corporation Gated diode memory cells
US20110026323A1 (en) * 2009-07-30 2011-02-03 International Business Machines Corporation Gated Diode Memory Cells
CN100426420C (zh) * 2004-11-24 2008-10-15 上海华虹Nec电子有限公司 用于低压非挥发存储器的字线升压电路
KR100630346B1 (ko) * 2005-07-05 2006-10-02 삼성전자주식회사 독출모드시 전하분배에 의한 워드라인 구동회로 및구동방법
KR100725980B1 (ko) * 2005-07-23 2007-06-08 삼성전자주식회사 비휘발성 메모리에 저장된 데이터를 독출하는 속도를개선할 수 있는 반도체 장치와 그 개선방법
US7692973B2 (en) * 2006-03-31 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
US8164964B2 (en) * 2009-09-16 2012-04-24 Arm Limited Boosting voltage levels applied to an access control line when accessing storage cells in a memory
US8520441B2 (en) 2010-11-16 2013-08-27 Sandisk Technologies Inc. Word line kicking when sensing non-volatile storage
JP2017216025A (ja) * 2016-05-31 2017-12-07 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265052A (en) * 1989-07-20 1993-11-23 Texas Instruments Incorporated Wordline driver circuit for EEPROM memory cell
JPH0812754B2 (ja) * 1990-08-20 1996-02-07 富士通株式会社 昇圧回路
JPH05151789A (ja) * 1991-11-29 1993-06-18 Nec Corp 電気的に書込・一括消去可能な不揮発性半導体記憶装置
JP2905666B2 (ja) * 1992-05-25 1999-06-14 三菱電機株式会社 半導体装置における内部電圧発生回路および不揮発性半導体記憶装置
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JPH07201173A (ja) * 1993-12-28 1995-08-04 Matsushita Electron Corp 半導体装置
JP3647869B2 (ja) * 1995-01-26 2005-05-18 マクロニクス インターナショナル カンパニイ リミテッド プラス及びマイナス電圧モードを有するデコードされたワードラインドライバ
US5587951A (en) * 1995-08-04 1996-12-24 Atmel Corporation High speed, low voltage non-volatile memory
EP0814481B1 (de) * 1996-06-18 2002-03-20 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit niedriger Versorgungsspannung und Spannungserhöher

Also Published As

Publication number Publication date
TW454193B (en) 2001-09-11
DE69903966T2 (de) 2003-09-18
KR20010100877A (ko) 2001-11-14
WO2000021094A1 (en) 2000-04-13
EP1116240B1 (de) 2002-11-13
EP1116240A1 (de) 2001-07-18
US6134146A (en) 2000-10-17
KR100578581B1 (ko) 2006-05-12
JP2002527849A (ja) 2002-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU LTD., KAWASAKI, KANAGAWA, JP

Owner name: SPANSION LLC ((N.D.GES.D. STAATES DELAWARE), SUNNY

8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SUNNYV