US6002614A
(en)
|
1991-02-08 |
1999-12-14 |
Btg International Inc. |
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
|
US5218569A
(en)
|
1991-02-08 |
1993-06-08 |
Banks Gerald J |
Electrically alterable non-volatile memory with n-bits per memory cell
|
US6347051B2
(en)
|
1991-11-26 |
2002-02-12 |
Hitachi, Ltd. |
Storage device employing a flash memory
|
US5657332A
(en)
*
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
JP3232945B2
(ja)
*
|
1994-08-22 |
2001-11-26 |
セイコーエプソン株式会社 |
前処理方法および入出力装置
|
US6353554B1
(en)
|
1995-02-27 |
2002-03-05 |
Btg International Inc. |
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
|
KR100243314B1
(ko)
*
|
1995-04-07 |
2000-02-01 |
윤종용 |
임시 디펙트 리스트를 이용한 에러 로그 방법
|
US5671388A
(en)
*
|
1995-05-03 |
1997-09-23 |
Intel Corporation |
Method and apparatus for performing write operations in multi-level cell storage device
|
JPH09160728A
(ja)
*
|
1995-12-11 |
1997-06-20 |
Oki Electric Ind Co Ltd |
記憶装置のエラー訂正方法
|
JPH09204367A
(ja)
*
|
1996-01-25 |
1997-08-05 |
Mitsubishi Electric Corp |
フラッシュディスクカードにおけるフラッシュメモリデータのリフレッシュ方法
|
US5754566A
(en)
*
|
1996-09-06 |
1998-05-19 |
Intel Corporation |
Method and apparatus for correcting a multilevel cell memory by using interleaving
|
US6857099B1
(en)
|
1996-09-18 |
2005-02-15 |
Nippon Steel Corporation |
Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
|
US5860124A
(en)
*
|
1996-09-30 |
1999-01-12 |
Intel Corporation |
Method for performing a continuous over-write of a file in nonvolatile memory
|
US5754567A
(en)
*
|
1996-10-15 |
1998-05-19 |
Micron Quantum Devices, Inc. |
Write reduction in flash memory systems through ECC usage
|
US6839875B2
(en)
|
1996-10-18 |
2005-01-04 |
Micron Technology, Inc. |
Method and apparatus for performing error correction on data read from a multistate memory
|
US5864569A
(en)
*
|
1996-10-18 |
1999-01-26 |
Micron Technology, Inc. |
Method and apparatus for performing error correction on data read from a multistate memory
|
US5859858A
(en)
*
|
1996-10-25 |
1999-01-12 |
Intel Corporation |
Method and apparatus for correcting a multilevel cell memory by using error locating codes
|
US6279069B1
(en)
|
1996-12-26 |
2001-08-21 |
Intel Corporation |
Interface for flash EEPROM memory arrays
|
US5937423A
(en)
*
|
1996-12-26 |
1999-08-10 |
Intel Corporation |
Register interface for flash EEPROM memory arrays
|
CN1073724C
(zh)
*
|
1997-02-19 |
2001-10-24 |
华为技术有限公司 |
计算机存储器的维护方法
|
US5930167A
(en)
*
|
1997-07-30 |
1999-07-27 |
Sandisk Corporation |
Multi-state non-volatile flash memory capable of being its own two state write cache
|
US6360346B1
(en)
*
|
1997-08-27 |
2002-03-19 |
Sony Corporation |
Storage unit, method of checking storage unit, reading and writing method
|
DE69732637T2
(de)
|
1997-12-22 |
2005-12-29 |
Stmicroelectronics S.R.L., Agrate Brianza |
Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher
|
US6182239B1
(en)
*
|
1998-02-06 |
2001-01-30 |
Stmicroelectronics, Inc. |
Fault-tolerant codes for multi-level memories
|
US6128694A
(en)
*
|
1998-03-10 |
2000-10-03 |
Dell Usa, L.P. |
Method of correcting identification data stored in an EEPROM
|
US5959914A
(en)
*
|
1998-03-27 |
1999-09-28 |
Lsi Logic Corporation |
Memory controller with error correction memory test application
|
US6243289B1
(en)
|
1998-04-08 |
2001-06-05 |
Micron Technology Inc. |
Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
|
WO2000026783A1
(de)
*
|
1998-10-30 |
2000-05-11 |
Infineon Technologies Ag |
Speichereinrichtung zum speichern von daten und verfahren zum betreiben von speichereinrichtungen zum speichern von daten
|
US6260156B1
(en)
|
1998-12-04 |
2001-07-10 |
Datalight, Inc. |
Method and system for managing bad areas in flash memory
|
JP2000173289A
(ja)
*
|
1998-12-10 |
2000-06-23 |
Toshiba Corp |
エラー訂正可能なフラッシュメモリシステム
|
EP1028379B1
(de)
|
1999-02-10 |
2003-05-07 |
STMicroelectronics S.r.l. |
Verfahren zur Fehlerkorrektur in einem in einer Mehrpegelspeicherzelle gespeicherten Binärwort, mit einer Minimumanzahl von Korrekturbits
|
JP4074029B2
(ja)
*
|
1999-06-28 |
2008-04-09 |
株式会社東芝 |
フラッシュメモリ
|
DE60024564T2
(de)
|
1999-11-01 |
2006-08-10 |
Koninklijke Philips Electronics N.V. |
Datenschaltung mit einem nicht flüchtigen Speicher und mit einer fehlerkorrigierenden Schaltung
|
EP1096379B1
(de)
*
|
1999-11-01 |
2005-12-07 |
Koninklijke Philips Electronics N.V. |
Datenschaltung mit einem nichtflüchtigen Speicher und mit einer fehlerkorrigierenden Schaltung
|
JP3893005B2
(ja)
|
2000-01-06 |
2007-03-14 |
富士通株式会社 |
不揮発性半導体記憶装置
|
US6532556B1
(en)
|
2000-01-27 |
2003-03-11 |
Multi Level Memory Technology |
Data management for multi-bit-per-cell memories
|
US6363008B1
(en)
|
2000-02-17 |
2002-03-26 |
Multi Level Memory Technology |
Multi-bit-cell non-volatile memory with maximized data capacity
|
JP4323707B2
(ja)
*
|
2000-10-25 |
2009-09-02 |
富士通マイクロエレクトロニクス株式会社 |
フラッシュメモリの欠陥管理方法
|
KR100393619B1
(ko)
*
|
2001-09-07 |
2003-08-02 |
삼성전자주식회사 |
휴대 단말기의 메모리 장치 및 그 제어방법
|
US6456528B1
(en)
|
2001-09-17 |
2002-09-24 |
Sandisk Corporation |
Selective operation of a multi-state non-volatile memory system in a binary mode
|
US6717847B2
(en)
*
|
2001-09-17 |
2004-04-06 |
Sandisk Corporation |
Selective operation of a multi-state non-volatile memory system in a binary mode
|
TW200302966A
(en)
*
|
2002-01-29 |
2003-08-16 |
Matsushita Electric Ind Co Ltd |
Memory device, data processing method and data processing program
|
US7231585B2
(en)
*
|
2002-12-11 |
2007-06-12 |
Nvidia Corporation |
Error correction for flash memory
|
US7296213B2
(en)
*
|
2002-12-11 |
2007-11-13 |
Nvidia Corporation |
Error correction cache for flash memory
|
US20040153902A1
(en)
*
|
2003-01-21 |
2004-08-05 |
Nexflash Technologies, Inc. |
Serial flash integrated circuit having error detection and correction
|
JP2004259144A
(ja)
*
|
2003-02-27 |
2004-09-16 |
Renesas Technology Corp |
半導体記憶装置
|
JP2005056394A
(ja)
*
|
2003-07-18 |
2005-03-03 |
Toshiba Corp |
記憶装置及びメモリカード
|
KR100546348B1
(ko)
*
|
2003-07-23 |
2006-01-26 |
삼성전자주식회사 |
플래시 메모리 시스템 및 그 데이터 저장 방법
|
US7173852B2
(en)
|
2003-10-03 |
2007-02-06 |
Sandisk Corporation |
Corrected data storage and handling methods
|
US7012835B2
(en)
*
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
KR100719380B1
(ko)
*
|
2006-03-31 |
2007-05-18 |
삼성전자주식회사 |
향상된 신뢰성 특성을 갖는 다치 플래시 메모리 장치 및그것을 포함한 메모리 시스템
|
US7881133B2
(en)
*
|
2003-11-11 |
2011-02-01 |
Samsung Electronics Co., Ltd. |
Method of managing a flash memory and the flash memory
|
KR100645043B1
(ko)
*
|
2004-09-08 |
2006-11-10 |
삼성전자주식회사 |
테스트용 버퍼를 구비한 불휘발성 메모리 장치 및 그것의테스트 방법
|
US7395404B2
(en)
|
2004-12-16 |
2008-07-01 |
Sandisk Corporation |
Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
|
US7412560B2
(en)
*
|
2004-12-16 |
2008-08-12 |
Sandisk Corporation |
Non-volatile memory and method with multi-stream updating
|
US7315916B2
(en)
|
2004-12-16 |
2008-01-01 |
Sandisk Corporation |
Scratch pad block
|
US7366826B2
(en)
*
|
2004-12-16 |
2008-04-29 |
Sandisk Corporation |
Non-volatile memory and method with multi-stream update tracking
|
US7386655B2
(en)
*
|
2004-12-16 |
2008-06-10 |
Sandisk Corporation |
Non-volatile memory and method with improved indexing for scratch pad and update blocks
|
JP2006302345A
(ja)
*
|
2005-04-15 |
2006-11-02 |
Sony Corp |
データ処理装置、データ再生装置、データ処理方法及びプログラム
|
US7526715B2
(en)
*
|
2005-10-17 |
2009-04-28 |
Ramot At Tel Aviv University Ltd. |
Probabilistic error correction in multi-bit-per-cell flash memory
|
EP1952290B1
(de)
*
|
2005-10-17 |
2011-11-23 |
Ramot at Tel-Aviv University Ltd. |
Probabilistische fehlerkorrektur in einem mehrbit-pro-zelle-flash-speicher
|
DE102006013758A1
(de)
*
|
2006-03-24 |
2007-09-27 |
Robert Bosch Gmbh |
Verfahren zum Betreiben einer Speichereinrichtung
|
DE102006013763A1
(de)
*
|
2006-03-24 |
2007-09-27 |
Robert Bosch Gmbh |
Verfahren zum Betreiben einer Speichereinrichtung
|
US7447096B2
(en)
*
|
2006-05-05 |
2008-11-04 |
Honeywell International Inc. |
Method for refreshing a non-volatile memory
|
US7567461B2
(en)
*
|
2006-08-18 |
2009-07-28 |
Micron Technology, Inc. |
Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
|
US7649787B2
(en)
*
|
2006-09-05 |
2010-01-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US7716538B2
(en)
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7886204B2
(en)
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
KR100926475B1
(ko)
*
|
2006-12-11 |
2009-11-12 |
삼성전자주식회사 |
멀티 비트 플래시 메모리 장치 및 그것의 프로그램 방법
|
US9885739B2
(en)
|
2006-12-29 |
2018-02-06 |
Electro Industries/Gauge Tech |
Intelligent electronic device capable of operating as a USB master device and a USB slave device
|
US9063181B2
(en)
*
|
2006-12-29 |
2015-06-23 |
Electro Industries/Gauge Tech |
Memory management for an intelligent electronic device
|
KR100845529B1
(ko)
*
|
2007-01-03 |
2008-07-10 |
삼성전자주식회사 |
플래시 메모리 장치의 이씨씨 제어기 및 그것을 포함한메모리 시스템
|
KR100842680B1
(ko)
*
|
2007-01-08 |
2008-07-01 |
삼성전자주식회사 |
플래시 메모리 장치의 오류 정정 컨트롤러 및 그것을포함하는 메모리 시스템
|
US7477547B2
(en)
*
|
2007-03-28 |
2009-01-13 |
Sandisk Corporation |
Flash memory refresh techniques triggered by controlled scrub data reads
|
US7573773B2
(en)
|
2007-03-28 |
2009-08-11 |
Sandisk Corporation |
Flash memory with data refresh triggered by controlled scrub data reads
|
US7747903B2
(en)
|
2007-07-09 |
2010-06-29 |
Micron Technology, Inc. |
Error correction for memory
|
KR101413736B1
(ko)
*
|
2007-09-13 |
2014-07-02 |
삼성전자주식회사 |
향상된 신뢰성을 갖는 메모리 시스템 및 그것의웨어-레벨링 기법
|
KR101406279B1
(ko)
*
|
2007-12-20 |
2014-06-13 |
삼성전자주식회사 |
반도체 메모리 장치 및 그것의 읽기 페일 분석 방법
|
KR101434405B1
(ko)
*
|
2008-02-20 |
2014-08-29 |
삼성전자주식회사 |
메모리 장치 및 메모리 데이터 읽기 방법
|
JP4489127B2
(ja)
*
|
2008-02-29 |
2010-06-23 |
株式会社東芝 |
半導体記憶装置
|
US7917803B2
(en)
*
|
2008-06-17 |
2011-03-29 |
Seagate Technology Llc |
Data conflict resolution for solid-state memory devices
|
TWI381391B
(zh)
*
|
2008-08-05 |
2013-01-01 |
Transcend Information Inc |
可自我檢測使用狀態的儲存裝置及其檢測方法
|
US20100100797A1
(en)
*
|
2008-10-16 |
2010-04-22 |
Genesys Logic, Inc. |
Dual mode error correction code (ecc) apparatus for flash memory and method thereof
|
US8583986B2
(en)
*
|
2008-12-17 |
2013-11-12 |
Seagate Technology Llc |
Solid-state memory with error correction coding
|
US8321727B2
(en)
*
|
2009-06-29 |
2012-11-27 |
Sandisk Technologies Inc. |
System and method responsive to a rate of change of a performance parameter of a memory
|
US8400854B2
(en)
*
|
2009-09-11 |
2013-03-19 |
Sandisk Technologies Inc. |
Identifying at-risk data in non-volatile storage
|
USD712289S1
(en)
|
2009-12-01 |
2014-09-02 |
Electro Industries/Gauge Tech |
Electronic meter
|
WO2011092641A1
(en)
|
2010-01-28 |
2011-08-04 |
International Business Machines Corporation |
Method, device and computer program product for decoding a codeword
|
CN101901169B
(zh)
*
|
2010-03-23 |
2013-08-28 |
华为数字技术(成都)有限公司 |
扫描装置及方法
|
US8788904B2
(en)
*
|
2011-10-31 |
2014-07-22 |
Hewlett-Packard Development Company, L.P. |
Methods and apparatus to perform error detection and correction
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
TWI467376B
(zh)
*
|
2012-06-11 |
2015-01-01 |
Phison Electronics Corp |
資料保護方法、記憶體控制器與記憶體儲存裝置
|
CN103745753A
(zh)
*
|
2013-12-17 |
2014-04-23 |
记忆科技(深圳)有限公司 |
基于闪存的纠错方法与系统
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
US9927470B2
(en)
|
2014-05-22 |
2018-03-27 |
Electro Industries/Gauge Tech |
Intelligent electronic device having a memory structure for preventing data loss upon power loss
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
CN106601303B
(zh)
*
|
2016-12-12 |
2019-08-09 |
建荣半导体(深圳)有限公司 |
一种闪存的坏块管理方法、装置和一种存储装置
|
US10394647B2
(en)
*
|
2017-06-22 |
2019-08-27 |
International Business Machines Corporation |
Bad bit register for memory
|
USD939988S1
(en)
|
2019-09-26 |
2022-01-04 |
Electro Industries/Gauge Tech |
Electronic power meter
|