DE69703770D1 - Besichtigungslösung auf Polysilazan-Basis für die Isolierung mit einer Zwischenschicht - Google Patents

Besichtigungslösung auf Polysilazan-Basis für die Isolierung mit einer Zwischenschicht

Info

Publication number
DE69703770D1
DE69703770D1 DE69703770T DE69703770T DE69703770D1 DE 69703770 D1 DE69703770 D1 DE 69703770D1 DE 69703770 T DE69703770 T DE 69703770T DE 69703770 T DE69703770 T DE 69703770T DE 69703770 D1 DE69703770 D1 DE 69703770D1
Authority
DE
Germany
Prior art keywords
polysilazane
insulation
intermediate layer
solution based
inspection solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69703770T
Other languages
English (en)
Other versions
DE69703770T2 (de
Inventor
Yoshio Hagiwara
Tatsuhiko Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of DE69703770D1 publication Critical patent/DE69703770D1/de
Application granted granted Critical
Publication of DE69703770T2 publication Critical patent/DE69703770T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
DE69703770T 1996-08-14 1997-08-12 Besichtigungslösung auf Polysilazan-Basis für die Isolierung mit einer Zwischenschicht Expired - Fee Related DE69703770T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21476396 1996-08-14

Publications (2)

Publication Number Publication Date
DE69703770D1 true DE69703770D1 (de) 2001-02-01
DE69703770T2 DE69703770T2 (de) 2001-07-12

Family

ID=16661142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703770T Expired - Fee Related DE69703770T2 (de) 1996-08-14 1997-08-12 Besichtigungslösung auf Polysilazan-Basis für die Isolierung mit einer Zwischenschicht

Country Status (4)

Country Link
US (1) US5885654A (de)
EP (1) EP0825231B1 (de)
KR (1) KR100298100B1 (de)
DE (1) DE69703770T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230664B2 (ja) * 1998-04-23 2001-11-19 日本電気株式会社 液晶表示装置とその製造方法
JP2000012536A (ja) 1998-06-24 2000-01-14 Tokyo Ohka Kogyo Co Ltd シリカ被膜形成方法
JP4011806B2 (ja) * 1998-12-28 2007-11-21 株式会社東芝 電子写真感光体、中間転写媒体、及び電子写真装置
US7053005B2 (en) 2000-05-02 2006-05-30 Samsung Electronics Co., Ltd. Method of forming a silicon oxide layer in a semiconductor manufacturing process
KR100362834B1 (ko) 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
US6479405B2 (en) 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
RU2332437C2 (ru) * 2002-11-01 2008-08-27 Клариант Интернэшнл Лтд Раствор для нанесения полисилазансодержащего покрытия и его применение
JP2004155834A (ja) * 2002-11-01 2004-06-03 Clariant Internatl Ltd ポリシラザン含有コーティング液
KR100503527B1 (ko) * 2003-02-12 2005-07-26 삼성전자주식회사 퍼하이드로 폴리실라잔을 포함하는 반도체 소자 제조용조성물 및 이를 이용한 반도체 소자의 제조방법
DE10318234A1 (de) * 2003-04-22 2004-11-25 Clariant Gmbh Verwendung von Polysilazan zur Herstellung von hydrophob- und oleophobmodifizierten Oberflächen
DE102004011212A1 (de) * 2004-03-04 2005-09-29 Clariant International Limited Perhydropolysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen
US7368150B2 (en) * 2004-05-14 2008-05-06 Joseph E Pritchett Method of applying a heat reflective coating to a substrate sheet
JP2008024429A (ja) * 2006-07-20 2008-02-07 Toshiba Corp 電子装置の製造方法
KR100849886B1 (ko) 2007-09-21 2008-08-01 지엔 주식회사 분체도장 방법과 그 도장 하지 전처리제
JP5160189B2 (ja) * 2007-10-26 2013-03-13 ＡｚエレクトロニックマテリアルズＩｐ株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
DE102009013315A1 (de) * 2009-03-18 2010-09-23 Sasol Germany Gmbh Beschichtungen unter Einsatz von Dialkyl-/Dialkenylethern als Hydrophobierungsmittel, deren Verwendung und Metalle versehen mit der Beschichtung
JP5692736B2 (ja) 2009-10-05 2015-04-01 株式会社Adeka 絶縁膜形成用塗布液、それを用いた絶縁膜
KR101056838B1 (ko) 2010-10-15 2011-08-12 테크노세미켐 주식회사 폴리실라잔 용액 및 이의 제조방법
NL2007768A (en) 2010-12-14 2012-06-18 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
US8598245B2 (en) 2011-04-14 2013-12-03 Alliant Techsystems Inc. Insulating materials comprising polysilazane, methods of forming such insulating materials, and precursor formulations comprising polysilazane
NL2008630A (en) 2011-04-27 2012-10-30 Asml Netherlands Bv Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder.
JP6085616B2 (ja) 2012-02-03 2017-02-22 エーエスエムエル ネザーランズ ビー．ブイ． 基板ホルダ、リソグラフィ装置、デバイス製造方法及び基板ホルダの製造方法
US10316216B2 (en) 2016-08-31 2019-06-11 Samsung Sdi Co., Ltd. Composition for forming silica layer, and silica layer
KR102194975B1 (ko) * 2017-10-13 2020-12-24 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
CN115537786B (zh) * 2022-10-31 2024-06-04 中国科学院高能物理研究所 一种绝缘层及其制备方法
CN115613013B (zh) * 2022-10-31 2024-06-04 中国科学院化学研究所 一种复合绝缘层及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145903A (ja) * 1983-12-29 1985-08-01 Toa Nenryo Kogyo Kk 無機ポリシラザン及びその合成方法
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JP3042537B2 (ja) * 1990-06-30 2000-05-15 東燃株式会社 改質ポリシラザン及びその製造方法
JP2974035B2 (ja) * 1991-05-16 1999-11-08 東京応化工業株式会社 酸化ケイ素系層間絶縁膜の製造方法
JP3283276B2 (ja) * 1991-12-04 2002-05-20 東燃ゼネラル石油株式会社 改質ポリシラザン及びその製造方法
JP3241823B2 (ja) * 1992-10-20 2001-12-25 触媒化成工業株式会社 シリカ系被膜形成用塗布液および被膜付基材
JP3357219B2 (ja) * 1994-06-28 2002-12-16 東京応化工業株式会社 シリカ系被膜の形成方法及び形成装置
JPH08176510A (ja) * 1994-12-26 1996-07-09 Hitachi Chem Co Ltd シリカ系被膜の製造法、シリカ系被膜および半導体装置
JP3696939B2 (ja) * 1995-08-11 2005-09-21 東京応化工業株式会社 シリカ系被膜の形成方法
JPH09125006A (ja) * 1995-10-30 1997-05-13 Tokyo Ohka Kogyo Co Ltd ポリシラザン系塗布液及びそれを用いたセラミックス被膜の形成方法
JPH1147722A (ja) * 1997-07-31 1999-02-23 Shinko Shoji Kk 発酵物撹拌方法及び装置

Also Published As

Publication number Publication date
EP0825231A2 (de) 1998-02-25
US5885654A (en) 1999-03-23
KR100298100B1 (ko) 2001-09-12
KR19980018634A (ko) 1998-06-05
DE69703770T2 (de) 2001-07-12
EP0825231B1 (de) 2000-12-27
EP0825231A3 (de) 1998-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee