DE69632893D1 - Photodetektorelement mit Schaltungselement und Verfahren zu dessen Herstellung - Google Patents

Photodetektorelement mit Schaltungselement und Verfahren zu dessen Herstellung

Info

Publication number
DE69632893D1
DE69632893D1 DE69632893T DE69632893T DE69632893D1 DE 69632893 D1 DE69632893 D1 DE 69632893D1 DE 69632893 T DE69632893 T DE 69632893T DE 69632893 T DE69632893 T DE 69632893T DE 69632893 D1 DE69632893 D1 DE 69632893D1
Authority
DE
Germany
Prior art keywords
production
photodetector
circuit element
circuit
photodetector element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69632893T
Other languages
English (en)
Other versions
DE69632893T2 (de
Inventor
Motohiko Yamamoto
Masaru Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69632893D1 publication Critical patent/DE69632893D1/de
Application granted granted Critical
Publication of DE69632893T2 publication Critical patent/DE69632893T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
DE69632893T 1995-07-24 1996-07-23 Photodetektorelement mit Schaltungselement und Verfahren zu dessen Herstellung Expired - Fee Related DE69632893T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP18726695 1995-07-24
JP18726695 1995-07-24
JP13185696 1996-05-27
JP13185696A JP3561084B2 (ja) 1995-07-24 1996-05-27 回路内蔵受光素子、電子部品、光ピックアップ装置および回路内蔵受光素子の製造方法

Publications (2)

Publication Number Publication Date
DE69632893D1 true DE69632893D1 (de) 2004-08-19
DE69632893T2 DE69632893T2 (de) 2005-07-14

Family

ID=26466578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69632893T Expired - Fee Related DE69632893T2 (de) 1995-07-24 1996-07-23 Photodetektorelement mit Schaltungselement und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US6127715A (de)
EP (1) EP0756333B1 (de)
JP (1) JP3561084B2 (de)
DE (1) DE69632893T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326601B1 (en) * 1999-07-19 2001-12-04 Agilent Technologies, Inc. Optical barrier
US6403457B2 (en) * 1999-08-25 2002-06-11 Micron Technology, Inc. Selectively coating bond pads
JP3317942B2 (ja) 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP3763715B2 (ja) 2000-01-24 2006-04-05 シャープ株式会社 受光素子および半導体レーザ装置
JP3798951B2 (ja) * 2000-06-07 2006-07-19 シャープ株式会社 回路内蔵受光素子、その製造方法および該受光素子を用いた光学装置
JP2002198374A (ja) * 2000-10-16 2002-07-12 Sharp Corp 半導体装置およびその製造方法
JP3803339B2 (ja) 2003-01-10 2006-08-02 松下電器産業株式会社 半導体レーザ装置
JP2004259836A (ja) * 2003-02-25 2004-09-16 Sony Corp 受発光素子および光ヘッド並びに光ディスク装置
JP2005109048A (ja) * 2003-09-29 2005-04-21 Sanyo Electric Co Ltd 光半導体集積回路装置の製造方法
JP2005286094A (ja) * 2004-03-30 2005-10-13 Sanyo Electric Co Ltd 光半導体集積回路装置
JP4663357B2 (ja) * 2005-03-15 2011-04-06 株式会社沖データ 半導体装置
KR100654052B1 (ko) * 2005-12-28 2006-12-05 동부일렉트로닉스 주식회사 Ｃｍｏｓ 이미지 센서의 제조방법
KR100654051B1 (ko) * 2005-12-28 2006-12-05 동부일렉트로닉스 주식회사 Ｃｍｏｓ 이미지 센서의 제조방법
US7884390B2 (en) * 2007-10-02 2011-02-08 Fairchild Semiconductor Corporation Structure and method of forming a topside contact to a backside terminal of a semiconductor device
US9368653B1 (en) 2014-12-23 2016-06-14 International Business Machines Corporation Silicon photonics integration method and structure
JP7040858B2 (ja) * 2017-09-22 2022-03-23 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266237A (en) * 1979-09-07 1981-05-05 Honeywell Inc. Semiconductor apparatus
JPS5727078A (en) * 1980-07-25 1982-02-13 Toshiba Corp Semiconductor device having light receiving element
JPS59134872A (ja) * 1983-01-23 1984-08-02 Rohm Co Ltd フオトセンサ−用ｉｃ
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPH079908B2 (ja) * 1987-12-18 1995-02-01 株式会社東芝 半導体装置
JPH01205462A (ja) * 1988-02-10 1989-08-17 Matsushita Electron Corp 半導体素子
JPH0787243B2 (ja) * 1990-10-18 1995-09-20 富士ゼロックス株式会社 半導体装置
JP2678400B2 (ja) * 1990-11-14 1997-11-17 シャープ株式会社 回路内蔵受光素子
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
JPH0513584A (ja) * 1991-07-03 1993-01-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0529379A (ja) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp 半導体装置およびそれの製造方法
JP2887985B2 (ja) * 1991-10-18 1999-05-10 日本電気株式会社 半導体装置及びその製造方法
US5483096A (en) * 1991-11-07 1996-01-09 Seiko Instruments Inc. Photo sensor
JPH05198530A (ja) * 1992-01-21 1993-08-06 Nec Corp 半導体装置の製造方法
JP2861629B2 (ja) * 1992-05-27 1999-02-24 日本電気株式会社 半導体装置
JPH06268188A (ja) * 1993-03-11 1994-09-22 Sony Corp 増幅型撮像素子
US5600157A (en) * 1993-04-28 1997-02-04 Oki Electric Industry Co., Ltd. Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity
US5371384A (en) * 1993-06-24 1994-12-06 Sony Corporation Solid state imaging device having a light emitting diode
JPH0770635A (ja) * 1993-08-31 1995-03-14 Nisshin Steel Co Ltd 冷延特殊鋼表面脱炭鋼帯の製造方法
US5480834A (en) * 1993-12-13 1996-01-02 Micron Communications, Inc. Process of manufacturing an electrical bonding interconnect having a metal bond pad portion and having a conductive epoxy portion comprising an oxide reducing agent
JP2988819B2 (ja) * 1993-12-24 1999-12-13 シャープ株式会社 回路内蔵受光素子の作製方法
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
JPH07273082A (ja) * 1994-03-29 1995-10-20 Sharp Corp 回路内蔵受光装置の作製方法
JPH07321290A (ja) * 1994-05-26 1995-12-08 Matsushita Electron Corp バイポーラ集積回路装置の製造方法

Also Published As

Publication number Publication date
US6127715A (en) 2000-10-03
EP0756333A3 (de) 1998-06-10
JP3561084B2 (ja) 2004-09-02
JPH0997892A (ja) 1997-04-08
DE69632893T2 (de) 2005-07-14
EP0756333B1 (de) 2004-07-14
EP0756333A2 (de) 1997-01-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee