DE69631100D1 - Ätzung von Nitridkristallen - Google Patents

Ätzung von Nitridkristallen

Info

Publication number
DE69631100D1
DE69631100D1 DE69631100A DE69631100A DE69631100D1 DE 69631100 D1 DE69631100 D1 DE 69631100D1 DE 69631100 A DE69631100 A DE 69631100A DE 69631100 A DE69631100 A DE 69631100A DE 69631100 D1 DE69631100 D1 DE 69631100D1
Authority
DE
Germany
Prior art keywords
etching
nitride crystals
crystals
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631100A
Other languages
English (en)
Other versions
DE69631100T4 (de
DE69631100T2 (de
Inventor
Yawara Kaneko
Norihide Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Application granted granted Critical
Publication of DE69631100D1 publication Critical patent/DE69631100D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Semiconductor Lasers (AREA)
DE69631100A 1995-07-29 1996-07-25 Ätzung von Nitridkristallen Expired - Lifetime DE69631100D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7212374A JPH0945670A (ja) 1995-07-29 1995-07-29 Ｉｉｉ族−ｎ系結晶の気相エッチング方法および再成長方法

Publications (1)

Publication Number Publication Date
DE69631100D1 true DE69631100D1 (de) 2004-01-29

Family

ID=16621514

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69631100T Expired - Lifetime DE69631100T4 (de) 1995-07-29 1996-07-25 Ätzung von Nitridkristallen
DE69631100A Expired - Lifetime DE69631100D1 (de) 1995-07-29 1996-07-25 Ätzung von Nitridkristallen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69631100T Expired - Lifetime DE69631100T4 (de) 1995-07-29 1996-07-25 Ätzung von Nitridkristallen

Country Status (5)

Country Link
US (1) US5814239A (de)
EP (1) EP0762486B9 (de)
JP (1) JPH0945670A (de)
KR (1) KR100436821B1 (de)
DE (2) DE69631100T4 (de)

Families Citing this family (40)

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US6083841A (en) * 1997-05-15 2000-07-04 Rohm Co., Ltd. Method of etching gallium-nitride based compound semiconductor layer and method of manufacturing semiconductor light emitting device utilizing the same
JP2000208874A (ja) * 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US6566256B1 (en) * 1999-04-16 2003-05-20 Gbl Technologies, Inc. Dual process semiconductor heterostructures and methods
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US6306739B1 (en) * 1999-04-27 2001-10-23 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
JP3773713B2 (ja) * 1999-08-24 2006-05-10 三洋電機株式会社 量子箱の形成方法
US6569765B1 (en) * 1999-08-26 2003-05-27 Cbl Technologies, Inc Hybrid deposition system and methods
EP1113485A3 (de) * 1999-12-27 2005-08-31 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren für ein Halbleiterbauelement
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3956637B2 (ja) 2001-04-12 2007-08-08 ソニー株式会社 窒化物半導体の結晶成長方法及び半導体素子の形成方法
US20020158046A1 (en) * 2001-04-27 2002-10-31 Chi Wu Formation of an optical component
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
US6921490B1 (en) 2002-09-06 2005-07-26 Kotura, Inc. Optical component having waveguides extending from a common region
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US20050164504A1 (en) * 2004-01-26 2005-07-28 Mirkarimi Laura W. Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices
JP5498640B2 (ja) * 2005-10-14 2014-05-21 大陽日酸株式会社 窒化物半導体製造装置部品の洗浄方法と洗浄装置
US11661673B1 (en) 2006-03-27 2023-05-30 Ostendo Technologies, Inc. HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US20070256635A1 (en) * 2006-05-02 2007-11-08 Applied Materials, Inc. A Delaware Corporation UV activation of NH3 for III-N deposition
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
DE102009010556B4 (de) * 2009-02-25 2013-11-07 Siltronic Ag Verfahren zur Herstellung von epitaxierten Siliciumscheiben
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
WO2010124261A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
WO2011044046A2 (en) * 2009-10-07 2011-04-14 Applied Materials, Inc. Improved multichamber split processes for led manufacturing
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
JP6301259B2 (ja) 2011-11-21 2018-03-28 サン‐ゴバン、クリストー、エ、デテクトゥールＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｒｉｓｔａｕｘ ＆ Ｄｅｔｅｃｔｅｕｒｓ 半導体基板および形成方法
CN103137439B (zh) * 2013-01-21 2016-03-02 华灿光电股份有限公司 一种GaN基外延片衬底的回收方法
CN103531678A (zh) * 2013-11-01 2014-01-22 杭州士兰明芯科技有限公司 一种去除衬底上GaN基外延层的方法
CN105655395B (zh) * 2015-01-27 2018-05-15 苏州捷芯威半导体有限公司 一种增强型高电子迁移率晶体管及其制作方法
SG10201604524PA (en) * 2015-06-05 2017-01-27 Lam Res Corp ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP7184252B2 (ja) * 2018-11-12 2022-12-06 国立大学法人東海国立大学機構 エッチング方法およびエッチング装置
WO2020257192A1 (en) * 2019-06-18 2020-12-24 Yale University In-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride, by organometallic chlorine precursors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156474A (ja) * 1984-08-28 1986-03-22 Matsushita Electric Ind Co Ltd 窒化ガリウム半導体装置の製造方法
JPH0770496B2 (ja) * 1987-02-26 1995-07-31 新電元工業株式会社 半導体装置の製造法
JP3055181B2 (ja) * 1990-03-06 2000-06-26 住友電気工業株式会社 薄膜成長法
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5535905A (en) * 1994-07-29 1996-07-16 General Motors Corporation Etching technique for producing cubic boron nitride films
US5567659A (en) * 1995-05-25 1996-10-22 Northern Telecom Limited Method of etching patterns in III-V material with accurate depth control

Also Published As

Publication number Publication date
EP0762486B9 (de) 2004-09-22
DE69631100T4 (de) 2005-06-30
EP0762486A3 (de) 1997-12-29
JPH0945670A (ja) 1997-02-14
US5814239A (en) 1998-09-29
KR970006546A (ko) 1997-02-21
EP0762486B1 (de) 2003-12-17
EP0762486A2 (de) 1997-03-12
KR100436821B1 (ko) 2004-09-18
DE69631100T2 (de) 2004-09-23

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