DE69802726T2 - Abscheidung von Titannitridfilme - Google Patents

Abscheidung von Titannitridfilme

Info

Publication number
DE69802726T2
DE69802726T2 DE69802726T DE69802726T DE69802726T2 DE 69802726 T2 DE69802726 T2 DE 69802726T2 DE 69802726 T DE69802726 T DE 69802726T DE 69802726 T DE69802726 T DE 69802726T DE 69802726 T2 DE69802726 T2 DE 69802726T2
Authority
DE
Germany
Prior art keywords
deposition
titanium nitride
nitride films
films
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69802726T
Other languages
English (en)
Other versions
DE69802726D1 (de
Inventor
Kenny King-Tai Ngan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69802726D1 publication Critical patent/DE69802726D1/de
Application granted granted Critical
Publication of DE69802726T2 publication Critical patent/DE69802726T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE69802726T 1997-02-26 1998-02-26 Abscheidung von Titannitridfilme Expired - Fee Related DE69802726T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/806,966 US6071811A (en) 1997-02-26 1997-02-26 Deposition of titanium nitride films having improved uniformity

Publications (2)

Publication Number Publication Date
DE69802726D1 DE69802726D1 (de) 2002-01-17
DE69802726T2 true DE69802726T2 (de) 2002-08-08

Family

ID=25195246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802726T Expired - Fee Related DE69802726T2 (de) 1997-02-26 1998-02-26 Abscheidung von Titannitridfilme

Country Status (7)

Country Link
US (1) US6071811A (de)
EP (1) EP0861921B1 (de)
JP (1) JPH10298747A (de)
KR (1) KR19980071719A (de)
DE (1) DE69802726T2 (de)
SG (1) SG65737A1 (de)
TW (1) TW370570B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US6342448B1 (en) * 2000-05-31 2002-01-29 Taiwan Semiconductor Manufacturing Company Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process
US6699372B2 (en) 2001-04-16 2004-03-02 Agere Systems Guardian Corporation Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
US20030091739A1 (en) * 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
KR20030039649A (ko) * 2001-11-14 2003-05-22 조치형 볼펜 볼의 코팅장치 및 방법
KR20030089756A (ko) * 2002-05-18 2003-11-28 주식회사 하이닉스반도체 삼원계 확산배리어막의 형성 방법 및 그를 이용한구리배선의 형성 방법
US7378744B2 (en) * 2004-05-10 2008-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
US7067409B2 (en) * 2004-05-10 2006-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
KR100731993B1 (ko) 2006-02-16 2007-06-27 주식회사 뉴파워 프라즈마 내부 방전 브리지를 갖는 플라즈마 소오스
US9115425B2 (en) 2010-10-18 2015-08-25 Electronics And Telecommunications Research Institute Thin film depositing apparatus
KR101382997B1 (ko) * 2012-02-08 2014-04-08 현대자동차주식회사 코팅층 표면 처리 방법
KR101509639B1 (ko) * 2013-10-18 2015-04-07 주식회사 포스코 방향성 전기강판의 세라믹 분말 코팅용 저압 형성 및 유지 장치
US11739418B2 (en) 2019-03-22 2023-08-29 Applied Materials, Inc. Method and apparatus for deposition of metal nitrides
JP2022525617A (ja) 2019-03-22 2022-05-18 アプライド マテリアルズ インコーポレイテッド 超電導膜を有する多層デバイスの堆積のための方法及び装置
CN110965023A (zh) * 2019-12-25 2020-04-07 北京北方华创微电子装备有限公司 氮化钛薄膜沉积方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954366C2 (de) * 1969-10-29 1972-02-03 Heraeus Gmbh W C Verfahren und Vorrichtung zur Herstellung von harten UEberzuegen aus Titan- und/oder Tantalverbindungen
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
FR2699934B1 (fr) * 1992-12-30 1995-03-17 Lorraine Inst Nat Polytech Procédé de contrôle de la concentration en métalloïde d'un dépôt réalisés par voie physique en phase vapeur réactive à l'aide d'un plasma froid de pulvérisation.
JPH06268083A (ja) * 1993-03-11 1994-09-22 Sony Corp 半導体装置の配線
JP2754176B2 (ja) * 1995-03-13 1998-05-20 エルジイ・セミコン・カンパニイ・リミテッド 緻密なチタン窒化膜及び緻密なチタン窒化膜／薄膜のチタンシリサイドの形成方法及びこれを用いた半導体素子の製造方法
US5604140A (en) * 1995-05-22 1997-02-18 Lg Semicon, Co. Ltd. Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same
US5591672A (en) * 1995-10-27 1997-01-07 Vanguard International Semiconductor Corporation Annealing of titanium - titanium nitride in contact hole
US5801098A (en) * 1996-09-03 1998-09-01 Motorola, Inc. Method of decreasing resistivity in an electrically conductive layer

Also Published As

Publication number Publication date
TW370570B (en) 1999-09-21
DE69802726D1 (de) 2002-01-17
JPH10298747A (ja) 1998-11-10
SG65737A1 (en) 1999-06-22
US6071811A (en) 2000-06-06
EP0861921B1 (de) 2001-12-05
KR19980071719A (ko) 1998-10-26
EP0861921A1 (de) 1998-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee