DE69739850D1 - Anti-reflektierende Behandlung von reflektierenden Oberflächen - Google Patents

Anti-reflektierende Behandlung von reflektierenden Oberflächen

Info

Publication number
DE69739850D1
DE69739850D1 DE69739850T DE69739850T DE69739850D1 DE 69739850 D1 DE69739850 D1 DE 69739850D1 DE 69739850 T DE69739850 T DE 69739850T DE 69739850 T DE69739850 T DE 69739850T DE 69739850 D1 DE69739850 D1 DE 69739850D1
Authority
DE
Germany
Prior art keywords
reflective
treatment
reflective surfaces
reflective treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739850T
Other languages
English (en)
Inventor
Jean-Marc Francou
Aomar Halimaoui
Andre Schiltz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chartoleaux KG LLC
Original Assignee
Chartoleaux KG LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartoleaux KG LLC filed Critical Chartoleaux KG LLC
Application granted granted Critical
Publication of DE69739850D1 publication Critical patent/DE69739850D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151Matting or other surface reflectivity altering material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/96Porous semiconductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/964Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
DE69739850T 1996-12-27 1997-12-22 Anti-reflektierende Behandlung von reflektierenden Oberflächen Expired - Lifetime DE69739850D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9616106A FR2758003B1 (fr) 1996-12-27 1996-12-27 Traitement anti-reflet de surfaces reflectives

Publications (1)

Publication Number Publication Date
DE69739850D1 true DE69739850D1 (de) 2010-06-02

Family

ID=9499213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739850T Expired - Lifetime DE69739850D1 (de) 1996-12-27 1997-12-22 Anti-reflektierende Behandlung von reflektierenden Oberflächen

Country Status (4)

Country Link
US (1) US6177235B1 (de)
EP (1) EP0851464B1 (de)
DE (1) DE69739850D1 (de)
FR (1) FR2758003B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777829B2 (en) 2002-03-13 2004-08-17 Celis Semiconductor Corporation Rectifier utilizing a grounded antenna
DE10324050A1 (de) * 2003-05-27 2004-12-30 Infineon Technologies Ag Schichtstapel und Verfahren zur Herstellung eines Schichtstapels
US7384727B2 (en) * 2003-06-26 2008-06-10 Micron Technology, Inc. Semiconductor processing patterning methods
US7115532B2 (en) * 2003-09-05 2006-10-03 Micron Technolgoy, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US7026243B2 (en) * 2003-10-20 2006-04-11 Micron Technology, Inc. Methods of forming conductive material silicides by reaction of metal with silicon
US6969677B2 (en) * 2003-10-20 2005-11-29 Micron Technology, Inc. Methods of forming conductive metal silicides by reaction of metal with silicon
US7153769B2 (en) * 2004-04-08 2006-12-26 Micron Technology, Inc. Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
US7119031B2 (en) * 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
US7241705B2 (en) * 2004-09-01 2007-07-10 Micron Technology, Inc. Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
AU2006283664B2 (en) 2005-08-19 2012-04-12 Houghton Technical Corp. Methods and compositions for acid treatment of a metal surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE20033C (de) C. A. ZlRN im Hamburg Neuerung an einer Metallliderung für Kolben
US5139974A (en) * 1991-01-25 1992-08-18 Micron Technology, Inc. Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
KR950007478B1 (ko) * 1992-06-17 1995-07-11 금성일렉트론주식회사 메탈 마스크 공정시 광반사 감소방법
DE4319413C2 (de) * 1993-06-14 1999-06-10 Forschungszentrum Juelich Gmbh Interferenzfilter oder dielektrischer Spiegel
US5599759A (en) * 1994-06-22 1997-02-04 Kabushiki Kaisha Toyota Chuo Kenkyusho Process for producing porous silicon oxide material

Also Published As

Publication number Publication date
EP0851464B1 (de) 2010-04-21
FR2758003A1 (fr) 1998-07-03
EP0851464A1 (de) 1998-07-01
FR2758003B1 (fr) 1999-06-18
US6177235B1 (en) 2001-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition