DE69631100D1 - Etching of nitride crystals - Google Patents
Etching of nitride crystalsInfo
- Publication number
- DE69631100D1 DE69631100D1 DE69631100A DE69631100A DE69631100D1 DE 69631100 D1 DE69631100 D1 DE 69631100D1 DE 69631100 A DE69631100 A DE 69631100A DE 69631100 A DE69631100 A DE 69631100A DE 69631100 D1 DE69631100 D1 DE 69631100D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- nitride crystals
- crystals
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7212374A JPH0945670A (en) | 1995-07-29 | 1995-07-29 | Vapor phase etching method of group iiinitrogen crystal and re-deposition process method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69631100D1 true DE69631100D1 (en) | 2004-01-29 |
Family
ID=16621514
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69631100A Expired - Lifetime DE69631100D1 (en) | 1995-07-29 | 1996-07-25 | Etching of nitride crystals |
DE69631100T Expired - Lifetime DE69631100T4 (en) | 1995-07-29 | 1996-07-25 | Etching of nitride crystals |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69631100T Expired - Lifetime DE69631100T4 (en) | 1995-07-29 | 1996-07-25 | Etching of nitride crystals |
Country Status (5)
Country | Link |
---|---|
US (1) | US5814239A (en) |
EP (1) | EP0762486B9 (en) |
JP (1) | JPH0945670A (en) |
KR (1) | KR100436821B1 (en) |
DE (2) | DE69631100D1 (en) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6083841A (en) * | 1997-05-15 | 2000-07-04 | Rohm Co., Ltd. | Method of etching gallium-nitride based compound semiconductor layer and method of manufacturing semiconductor light emitting device utilizing the same |
JP2000208874A (en) * | 1999-01-12 | 2000-07-28 | Sony Corp | Nitride semiconductor, its manufacture, nitride semiconductor light-emitting device, and its manufacture |
JP3702700B2 (en) * | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Group III nitride compound semiconductor device and method for manufacturing the same |
US6179913B1 (en) * | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
US6566256B1 (en) | 1999-04-16 | 2003-05-20 | Gbl Technologies, Inc. | Dual process semiconductor heterostructures and methods |
US6306739B1 (en) * | 1999-04-27 | 2001-10-23 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom |
JP3773713B2 (en) * | 1999-08-24 | 2006-05-10 | 三洋電機株式会社 | Method for forming quantum box |
US6569765B1 (en) * | 1999-08-26 | 2003-05-27 | Cbl Technologies, Inc | Hybrid deposition system and methods |
EP1113485A3 (en) * | 1999-12-27 | 2005-08-31 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor device |
JP3679720B2 (en) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | Nitride semiconductor device and method for forming nitride semiconductor |
JP3956637B2 (en) | 2001-04-12 | 2007-08-08 | ソニー株式会社 | Nitride semiconductor crystal growth method and semiconductor element formation method |
US20020158046A1 (en) * | 2001-04-27 | 2002-10-31 | Chi Wu | Formation of an optical component |
US20020158047A1 (en) * | 2001-04-27 | 2002-10-31 | Yiqiong Wang | Formation of an optical component having smooth sidewalls |
US6921490B1 (en) | 2002-09-06 | 2005-07-26 | Kotura, Inc. | Optical component having waveguides extending from a common region |
US20050130422A1 (en) * | 2003-12-12 | 2005-06-16 | 3M Innovative Properties Company | Method for patterning films |
US20050164504A1 (en) * | 2004-01-26 | 2005-07-28 | Mirkarimi Laura W. | Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices |
JP5498640B2 (en) * | 2005-10-14 | 2014-05-21 | 大陽日酸株式会社 | Method and apparatus for cleaning nitride semiconductor manufacturing equipment parts |
US11661673B1 (en) | 2006-03-27 | 2023-05-30 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
DE102009010556B4 (en) * | 2009-02-25 | 2013-11-07 | Siltronic Ag | Process for producing epitaxial silicon wafers |
US8491720B2 (en) * | 2009-04-10 | 2013-07-23 | Applied Materials, Inc. | HVPE precursor source hardware |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
US8138069B2 (en) * | 2009-04-24 | 2012-03-20 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group III depositions |
US20100273291A1 (en) * | 2009-04-28 | 2010-10-28 | Applied Materials, Inc. | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
KR20120023040A (en) * | 2009-04-29 | 2012-03-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Method of forming in-situ pre-gan deposition layer in hvpe |
WO2011044046A2 (en) * | 2009-10-07 | 2011-04-14 | Applied Materials, Inc. | Improved multichamber split processes for led manufacturing |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
TWI534291B (en) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
KR20140106590A (en) | 2011-11-21 | 2014-09-03 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | Semiconductor substrate and method of forming |
CN103137439B (en) * | 2013-01-21 | 2016-03-02 | 华灿光电股份有限公司 | A kind of recovery method of GaN base epitaxial wafer substrate |
CN103531678A (en) * | 2013-11-01 | 2014-01-22 | 杭州士兰明芯科技有限公司 | Method for removing GaN-based epitaxial layer on substrate |
CN105655395B (en) * | 2015-01-27 | 2018-05-15 | 苏州捷芯威半导体有限公司 | A kind of enhancement type high electron mobility transistor and preparation method thereof |
TWI750120B (en) * | 2015-06-05 | 2021-12-21 | 美商蘭姆研究公司 | ATOMIC LAYER ETCHING OF GaN AND OTHER Ⅲ-V MATERIALS |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
JP7184252B2 (en) * | 2018-11-12 | 2022-12-06 | 国立大学法人東海国立大学機構 | Etching method and etching apparatus |
WO2020257192A1 (en) * | 2019-06-18 | 2020-12-24 | Yale University | In-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride, by organometallic chlorine precursors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6156474A (en) * | 1984-08-28 | 1986-03-22 | Matsushita Electric Ind Co Ltd | Manufacture of gallium nitride semiconductor device |
JPH0770496B2 (en) * | 1987-02-26 | 1995-07-31 | 新電元工業株式会社 | Semiconductor device manufacturing method |
JP3055181B2 (en) * | 1990-03-06 | 2000-06-26 | 住友電気工業株式会社 | Thin film growth method |
US5270263A (en) * | 1991-12-20 | 1993-12-14 | Micron Technology, Inc. | Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering |
JPH06232099A (en) * | 1992-09-10 | 1994-08-19 | Mitsubishi Electric Corp | Manufacture of semiconductor device, manufacturing device of semiconductor device, manufacture of semiconductor laser, manufacture of quantum wire structure, and crystal growth method |
US5535905A (en) * | 1994-07-29 | 1996-07-16 | General Motors Corporation | Etching technique for producing cubic boron nitride films |
US5567659A (en) * | 1995-05-25 | 1996-10-22 | Northern Telecom Limited | Method of etching patterns in III-V material with accurate depth control |
-
1995
- 1995-07-29 JP JP7212374A patent/JPH0945670A/en active Pending
-
1996
- 1996-07-19 US US08/684,608 patent/US5814239A/en not_active Expired - Lifetime
- 1996-07-25 EP EP96305466A patent/EP0762486B9/en not_active Expired - Lifetime
- 1996-07-25 DE DE69631100A patent/DE69631100D1/en not_active Expired - Lifetime
- 1996-07-25 DE DE69631100T patent/DE69631100T4/en not_active Expired - Lifetime
- 1996-07-27 KR KR1019960030806A patent/KR100436821B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100436821B1 (en) | 2004-09-18 |
DE69631100T2 (en) | 2004-09-23 |
EP0762486A2 (en) | 1997-03-12 |
KR970006546A (en) | 1997-02-21 |
JPH0945670A (en) | 1997-02-14 |
EP0762486A3 (en) | 1997-12-29 |
US5814239A (en) | 1998-09-29 |
EP0762486B9 (en) | 2004-09-22 |
EP0762486B1 (en) | 2003-12-17 |
DE69631100T4 (en) | 2005-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |