JPS6156474A - Manufacture of gallium nitride semiconductor device - Google Patents
Manufacture of gallium nitride semiconductor deviceInfo
- Publication number
- JPS6156474A JPS6156474A JP59179709A JP17970984A JPS6156474A JP S6156474 A JPS6156474 A JP S6156474A JP 59179709 A JP59179709 A JP 59179709A JP 17970984 A JP17970984 A JP 17970984A JP S6156474 A JPS6156474 A JP S6156474A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gan layer
- gallium nitride
- gan
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000007789 gas Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 42
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 5
- 239000010980 sapphire Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、窒化ガリウム（以下、Ｇ ａ Ｎと記す）半
導体装置の製造方法、詳しくは、同Ｇ ａ Ｎへの電極
形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a gallium nitride (hereinafter referred to as GaN) semiconductor device, and more particularly to a method for forming electrodes on GaN.
従来例の構成とその問題点
ＧａＮは、青色発光素子の半導体材料として有望視され
ているが、大きな単結晶がなかなか実現できず、通常、
電気的に絶縁性のサファイア基板上に気相法でエピタキ
シャル成長させたものが用いられる。Conventional configurations and their problems Although GaN is seen as a promising semiconductor material for blue light-emitting devices, large single crystals are difficult to realize, and usually
It is epitaxially grown on an electrically insulating sapphire substrate using a vapor phase method.
Ｇ ａ Ｎはイオン結合性の強い結晶で、シリコン（Ｓ
ｔ）や砒化ガリウム（ＧａＡｓ ）などの共有結晶に比
較して、結晶が不完全で、窒素（Ｎ）の空孔などの結晶
欠陥を多く含んでいる。また、このＧ ａ Ｎ結晶では
、窒素の空孔はドナーとして振舞うので、不純物を添加
しなくても、低抵抗のｎ型半導体となることが多い。そ
こで、アクセプタ不純物を添加しても、そのほとんどが
電荷補償で費やされ、せいぜい絶縁体になるか、あるい
は高抵抗のｐ型（π型ともいう）の半導体になる程度で
、なかなか低抵抗のｐ型半導体が得られない。このため
、Ｇ ａ Ｎの青色発光素子は、完全なｐｍ接合ではな
く、概ね、ｉ（π）ｎ接合構造であることが多い。第１
図は、従来のＧ ａ Ｎ発光素子の概略断面図であシ、
サファイア基板１上のｎ型Ｇ ａ Ｎ層２に、亜鉛（Ｚ
ｎ）を添加した高比抵抗性のｉ（π）型Ｇ ａ Ｎ層３
を厚さ１μｍ程度に形成したもので、このｉ（π）型Ｇ
ａ Ｎ層３上には金属の電極層４を設けて、それに金
属細線５を圧着する。GaN is a crystal with strong ionic bonding properties, and is a crystal with strong ionic bonding properties.
Compared to covalent crystals such as t) and gallium arsenide (GaAs), the crystal is incomplete and contains many crystal defects such as nitrogen (N) vacancies. Furthermore, in this GaN crystal, nitrogen vacancies act as donors, so it often becomes a low-resistance n-type semiconductor even without adding impurities. Therefore, even if an acceptor impurity is added, most of it will be spent on charge compensation, and at most it will become an insulator or a high-resistance p-type (also called π-type) semiconductor. A p-type semiconductor cannot be obtained. For this reason, GaN blue light emitting elements often have an i(π)n junction structure rather than a perfect pm junction structure. 1st
The figure is a schematic cross-sectional view of a conventional GaN light emitting device.
Zinc (Z) is added to n-type GaN layer 2 on sapphire substrate 1.
High resistivity i(π) type GaN layer 3 added with n)
is formed to a thickness of about 1 μm, and this i(π) type G
a A metal electrode layer 4 is provided on the N layer 3, and a thin metal wire 5 is crimped onto it.
ところが、ｎ型Ｇ ａ Ｎ層２への電極形成は、なかな
か面倒である。すなわち、Ｇ ａ Ｎ結晶は化学的に安
定性の高い物質で、薬品による化学的なエツチングが困
難であるため、通常は、第１図示のように、ｎ型Ｇ ａ
Ｎ層２の側面にインジウム電極部６を設け、他方の電
極部７との間を針状細線８により、金属ステム９に電気
的に接続する方策が用いられる。しかし、ｎ型Ｇ ａ
Ｎ層２の厚さもせいぜい２０〜３０μｍの厚さしかなく
、インジウム電極部６の形成ならびにこの部位への針状
細線８の接続作業は至難であシ、製造性の悪いものであ
った。However, forming electrodes on the n-type GaN layer 2 is quite troublesome. In other words, GaN crystal is a highly chemically stable substance and is difficult to chemically etch using chemicals.
A method is used in which an indium electrode part 6 is provided on the side surface of the N layer 2 and the other electrode part 7 is electrically connected to the metal stem 9 by a thin needle wire 8. However, n-type Ga
The thickness of the N layer 2 was only 20 to 30 μm at most, and it was extremely difficult to form the indium electrode portion 6 and to connect the thin needle wire 8 to this portion, resulting in poor productivity.
発明の目的
本発明は、Ｇ ａ Ｎ層を選択的に除去することができ
る技術を開発し、これでもって、表面のＧａＮ層に開口
を形成して、これを通じて、下層のＧ ａ Ｎ層に電極
形成可能な製造方法を提供するものである。OBJECTS OF THE INVENTION The present invention has developed a technique that can selectively remove the GaN layer, thereby forming an opening in the surface GaN layer, through which the underlying GaN layer is exposed. The present invention provides a manufacturing method capable of forming electrodes.
発明の構成
本発明は、要約するに、基板上に少なくとも２層のＧ
ａ Ｎ層を形成したのち、前記構造の最表面層の表面に
保護被膜を形成し、ついで、前記保護被膜を選択的に除
去して、開口部を形成し、塩化水素ガスを含む気体雰囲
気中での熱処理により、前記開口部に露出した前記最表
面層のＧ ａ Ｎ層を除去し、同開口部に露出した前記
最表面層下のＧ ａ Ｎ層に電極を形成する工程をそな
えたものであシ、これにより最表面およびその直下のＧ
ａ Ｎ層のそれぞれの表面に対して平坦な電極層を形
成することができるので、Ｇ ａ Ｎの半導体装置が通
１常のワイヤポンド技術で組立て可能となり
、ＧａＮ半導体装置の製造性が大幅に向上する。Structure of the Invention In summary, the present invention provides at least two layers of G on a substrate.
a After forming the N layer, a protective film is formed on the surface of the outermost layer of the structure, and then the protective film is selectively removed to form an opening, and the film is exposed to a gas atmosphere containing hydrogen chloride gas. The step of removing the GaN layer of the outermost surface layer exposed to the opening through heat treatment and forming an electrode on the GaN layer below the outermost surface layer exposed to the opening. As a result, the uppermost surface and the G immediately below it
Since a flat electrode layer can be formed on each surface of the aN layer, GaN semiconductor devices can be assembled using normal wire bonding technology, greatly improving the manufacturability of GaN semiconductor devices. improves.
実施例の説明 つぎに、本発明を実施例によシ、詳しく説明する。Description of examples Next, the present invention will be explained in detail using examples.
第２図ａ −Ｃは、本発明実施例の工程順断面図であり
、サファイア基板１上に厚さ約３０μｍのｎ型Ｇ ａ
Ｎ層２および厚さ１μｍ程度の絶縁性ないしは高比抵抗
性ｐ型ＧａＮ層３を有する半導体装置の製造過程である
。2A to 2C are cross-sectional views in the order of steps of the embodiment of the present invention, in which an n-type Ga with a thickness of about 30 μm is formed on a sapphire substrate 1.
This is a manufacturing process of a semiconductor device having an N layer 2 and an insulating or high resistivity p-type GaN layer 3 with a thickness of about 1 μm.
まず、第２図ａのように、最表面のＧａＮ層３上に二酸
化ケイ素膜１０を付着させる。そして、この二酸化ケイ
素膜１ｏを保護マスク材として用い、これに開口部を選
択的に設けたのち、これをアルゴン（Ａｒ）と塩化水素
（ＨＣｌ ）ガスの混合比が２＝１の混合ガスを１分間
当り１．５１の流量で流しなから５ｏｏ℃、２０分間の
熱処理を行うと、この開口部に露出した最表面のＧ ａ
Ｎ層３が除去されて、第２図すのように、下層のＧ
ａ Ｎ層２が露出される。なお、この熱処理において、
熱処理温度がａＯＯ℃の場合に約８μｍ、同じく、６０
０℃の場合に約４μｍ、同じく、５００℃の場合に約２
μｍのＧａＮ層が除去されるが、最表面のＧ ａ Ｎ層
３の厚さはせいぜい１μｍであり、したがって、これを
こえるような条件下で熱処理を実施すると、最表面のＧ
ａ Ｎ層３が確実に分解除去され、下層のＧａＮ層２
の表面が現れる。First, as shown in FIG. 2a, a silicon dioxide film 10 is deposited on the outermost GaN layer 3. Then, this silicon dioxide film 1o is used as a protective mask material, and after selectively providing openings in it, it is filled with a mixed gas of argon (Ar) and hydrogen chloride (HCl) gas with a mixing ratio of 2=1. When heat treatment is performed at 50°C for 20 minutes while flowing at a flow rate of 1.51 per minute, the Ga of the outermost surface exposed in this opening is
The N layer 3 is removed and the underlying G layer is removed as shown in Figure 2.
a N layer 2 is exposed. In addition, in this heat treatment,
When the heat treatment temperature is aOO℃, it is about 8 μm, and similarly, it is 60 μm.
Approximately 4 μm at 0°C, and approximately 2 μm at 500°C
The thickness of the GaN layer 3 on the outermost surface is at most 1 μm, so if heat treatment is performed under conditions exceeding this, the thickness of the GaN layer 3 on the outermost surface will be removed.
a The N layer 3 is reliably decomposed and removed, and the underlying GaN layer 2
surface appears.
次に、保護被膜の二酸化ケイ素膜１０を除去したのち、
アルミニウムＣＡｌ ）膜を蒸着形成し、これにパター
ンニングを行い、第２図Ｃのように、第１の電極層４お
よび第２の電極層１１を形成する。Next, after removing the silicon dioxide film 10 as a protective coating,
An aluminum (CAl) film is deposited and patterned to form a first electrode layer 4 and a second electrode layer 11 as shown in FIG. 2C.
第３図は、金属ステム９上に、第２図Ｃで示す実施例の
半導体装置を組み込んだものの概略断面図であり、金属
細線５を用いて、通常のワイヤボンディング技術で電極
接続を行なったものである。FIG. 3 is a schematic cross-sectional view of the semiconductor device of the embodiment shown in FIG. 2C installed on a metal stem 9. Electrode connections were made using a thin metal wire 5 by ordinary wire bonding technology. It is something.
発明の効果
本発明によれば、保護被膜に二酸化ケイ素を用いて、こ
れをマスクに、開口部を通じて、露出面のＧ ａ Ｎ層
を塩化水素ガスを含む気体雰囲気中で熱処理することに
よシ、Ｇ ａ Ｎ層の選択的除去が行われ、この技術を
用いることにより、Ｇ ａ Ｎ結晶を用いる半導体装置
で、平面的電極部の形成が可能になり、製造性が格段に
向上する。Effects of the Invention According to the present invention, silicon dioxide is used as a protective film, and silicon dioxide is used as a mask to heat-treat the exposed surface of the GaN layer through the opening in a gas atmosphere containing hydrogen chloride gas. , selective removal of the GaN layer is performed, and by using this technique, it becomes possible to form a planar electrode portion in a semiconductor device using GaN crystal, and the manufacturability is significantly improved.
第１図は従来例のＧａＮ発光素子の概略断面図、第２図
ａ −Ｃは本発明実施例の工程順断面図、第３図は本発
明の実施例で得られたＧ ａ Ｎ発光素子の概略断面図
である。
１・・・・・・サファイア基板、２・・・・・・ｎ型Ｇ
ａ Ｎ層、３・・・・・・ｉ（π）型Ｇ ａ Ｎ層、
４，１１・・・・・・電極層、５・・・・・・金属細線
（ボンディングワイヤ）。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
○ ■
第２図
第３図FIG. 1 is a schematic sectional view of a conventional GaN light emitting device, FIG. 2 a-C is a step-by-step sectional view of an example of the present invention, and FIG. 3 is a GaN light emitting device obtained in an example of the present invention. FIG. 1... Sapphire substrate, 2... N-type G
a N layer, 3...i (π) type Ga N layer,
4, 11...electrode layer, 5...metal thin wire (bonding wire). Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure ○ ■ Figure 2 Figure 3
Claims (2)
した後、最表面層の前記窒化ガリウム層表面に保護被膜
を形成し、ついで、前記保護被膜を選択的に除去して、
開口部を形成し、塩化水素ガスを含む気体雰囲気中での
熱処理により、前記開口部に露出した最表面層の前記窒
化ガリウム層を除去し、同開口部に露出した最表面層下
の前記窒化ガリウム層に電極を形成する工程をそなえた
窒化ガリウム半導体装置の製造方法。(1) After forming at least two gallium nitride layers on the substrate, forming a protective film on the surface of the gallium nitride layer, which is the outermost layer, and then selectively removing the protective film,
An opening is formed, and the gallium nitride layer of the outermost surface layer exposed to the opening is removed by heat treatment in a gas atmosphere containing hydrogen chloride gas, and the nitride layer below the outermost surface layer exposed to the opening is removed. A method for manufacturing a gallium nitride semiconductor device, which includes a step of forming an electrode on a gallium layer.
窒化ガリウム層と反対導電性でなる特許請求の範囲第１
項記載の窒化ガリウム半導体装置の製造方法。(2) Claim 1 in which the outermost gallium nitride layer is insulating or has a conductivity opposite to that of the underlying gallium nitride layer.
A method for manufacturing a gallium nitride semiconductor device as described in 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59179709A JPS6156474A (en) | 1984-08-28 | 1984-08-28 | Manufacture of gallium nitride semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59179709A JPS6156474A (en) | 1984-08-28 | 1984-08-28 | Manufacture of gallium nitride semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6156474A true JPS6156474A (en) | 1986-03-22 |
Family
ID=16070500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59179709A Pending JPS6156474A (en) | 1984-08-28 | 1984-08-28 | Manufacture of gallium nitride semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6156474A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278025A (en) * | 1988-04-29 | 1989-11-08 | Toyoda Gosei Co Ltd | Semiconductor dry-etching method |
| JPH01278026A (en) * | 1988-04-29 | 1989-11-08 | Toyoda Gosei Co Ltd | Semiconductor dry etching method |
| JPH03252174A (en) * | 1990-02-28 | 1991-11-11 | Toyoda Gosei Co Ltd | Surface processing of gallium nitride compound semiconductor |
| JPH05129658A (en) * | 1991-10-30 | 1993-05-25 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emission device |
| JPH05183189A (en) † | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | Manufacture of p-type gallium nitride based compound semiconductor |
| JPH08316529A (en) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emitting device |
| EP0762486A2 (en) * | 1995-07-29 | 1997-03-12 | Hewlett-Packard Company | Etching of nitride crystal |
| JPH09129924A (en) * | 1995-10-27 | 1997-05-16 | Toyoda Gosei Co Ltd | Iii group nitride semiconductor etching method and light emitting element manufacturing method |
| JP2003110139A (en) * | 2001-09-28 | 2003-04-11 | Sanyo Electric Co Ltd | Nitride semiconductor light emitting element |
| US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
| US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
| US6881983B2 (en) | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| JP2008530778A (en) * | 2005-02-04 | 2008-08-07 | ソウル オプト デバイス カンパニー リミテッド | Light emitting device having a plurality of light emitting cells and method for manufacturing the same |
| JP2013093542A (en) * | 2011-10-24 | 2013-05-16 | Lg Innotek Co Ltd | Light emitting device |
-
1984
- 1984-08-28 JP JP59179709A patent/JPS6156474A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278026A (en) * | 1988-04-29 | 1989-11-08 | Toyoda Gosei Co Ltd | Semiconductor dry etching method |
| JPH01278025A (en) * | 1988-04-29 | 1989-11-08 | Toyoda Gosei Co Ltd | Semiconductor dry-etching method |
| JPH03252174A (en) * | 1990-02-28 | 1991-11-11 | Toyoda Gosei Co Ltd | Surface processing of gallium nitride compound semiconductor |
| JP2666228B2 (en) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JPH05129658A (en) * | 1991-10-30 | 1993-05-25 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emission device |
| JPH05183189A (en) † | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | Manufacture of p-type gallium nitride based compound semiconductor |
| EP0762486A2 (en) * | 1995-07-29 | 1997-03-12 | Hewlett-Packard Company | Etching of nitride crystal |
| EP0762486A3 (en) * | 1995-07-29 | 1997-12-29 | Hewlett-Packard Company | Etching of nitride crystal |
| US5814239A (en) * | 1995-07-29 | 1998-09-29 | Hewlett-Packard Company | Gas-phase etching and regrowth method for Group III-nitride crystals |
| JPH09129924A (en) * | 1995-10-27 | 1997-05-16 | Toyoda Gosei Co Ltd | Iii group nitride semiconductor etching method and light emitting element manufacturing method |
| JPH08316529A (en) * | 1996-05-16 | 1996-11-29 | Toyoda Gosei Co Ltd | Gallium nitride compound semiconductor light emitting device |
| JP2003110139A (en) * | 2001-09-28 | 2003-04-11 | Sanyo Electric Co Ltd | Nitride semiconductor light emitting element |
| US6881983B2 (en) | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
| US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
| JP2008530778A (en) * | 2005-02-04 | 2008-08-07 | ソウル オプト デバイス カンパニー リミテッド | Light emitting device having a plurality of light emitting cells and method for manufacturing the same |
| US7880183B2 (en) | 2005-02-04 | 2011-02-01 | Seoul Opto Device Co., Ltd. | Light emitting device having a plurality of light emitting cells and method of fabricating the same |
| JP2013093542A (en) * | 2011-10-24 | 2013-05-16 | Lg Innotek Co Ltd | Light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2786952B2 (en) | Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same | |
| JP3705016B2 (en) | Translucent electrode film and group III nitride compound semiconductor device | |
| JPS6156474A (en) | Manufacture of gallium nitride semiconductor device | |
| JPS60142568A (en) | Manufacture of sic field effect transistor | |
| JPS60175468A (en) | Manufacture of gallium nitride semiconductor device | |
| US20020163007A1 (en) | Semiconductor light emitting device and method for manufacturing the same | |
| JPS63108709A (en) | Semiconductor device and manufacture of the same | |
| JPS62123716A (en) | Manufacture of semiconductor device | |
| JPH01270593A (en) | Method for forming compound semiconductor layer | |
| JPS617671A (en) | Gallium nitride semiconductor device | |
| JPS617621A (en) | Manufacture of gallium nitride semiconductor device | |
| JPS6394673A (en) | Manufacture of schottky barrier semiconductor device | |
| JPS6235539A (en) | Manufacture of semiconductor device | |
| JP3560561B2 (en) | Method of manufacturing gallium nitride based compound semiconductor light emitting device | |
| JP3384700B2 (en) | Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same | |
| JPS6154620A (en) | Manufacture of semiconductor device | |
| JPS607721A (en) | Manufacture of compound semiconductor device | |
| JPS63253633A (en) | Manufacture of semiconductor device | |
| JPS6164118A (en) | Manufacture of semiconductor device | |
| JPS6235587A (en) | Light emitting element | |
| JPS62118584A (en) | Manufacture of optical semiconductor device | |
| JPH02263478A (en) | Manufacture of semiconductor element | |
| JPS5972723A (en) | Formation of ohmic electrode of iii-v group compound semiconductor | |
| JPS6394674A (en) | Schottky barrier semiconductor device | |
| JPH04261034A (en) | Semiconductor device and manufacture thereof |