DE69618747D1 - Halbleiterspeicheranordnung mit niedrigem Leckstrom und verbessertem Datenschutz - Google Patents
Halbleiterspeicheranordnung mit niedrigem Leckstrom und verbessertem DatenschutzInfo
- Publication number
- DE69618747D1 DE69618747D1 DE69618747T DE69618747T DE69618747D1 DE 69618747 D1 DE69618747 D1 DE 69618747D1 DE 69618747 T DE69618747 T DE 69618747T DE 69618747 T DE69618747 T DE 69618747T DE 69618747 D1 DE69618747 D1 DE 69618747D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- leakage current
- data protection
- low leakage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28879095 | 1995-11-07 | ||
JP7288790A JPH09134591A (ja) | 1995-11-07 | 1995-11-07 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69618747D1 true DE69618747D1 (de) | 2002-03-14 |
DE69618747T2 DE69618747T2 (de) | 2004-05-06 |
Family
ID=17734763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69618747T Expired - Lifetime DE69618747T2 (de) | 1995-11-07 | 1996-10-22 | Halbleiterspeicheranordnung mit niedrigem Leckstrom und verbessertem Datenschutz |
Country Status (6)
Country | Link |
---|---|
US (1) | US5781481A (de) |
EP (1) | EP0773550B1 (de) |
JP (1) | JPH09134591A (de) |
KR (1) | KR100327780B1 (de) |
DE (1) | DE69618747T2 (de) |
TW (1) | TW332333B (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254275A (ja) * | 1994-01-31 | 1995-10-03 | Toshiba Corp | 半導体記憶装置 |
US5838631A (en) | 1996-04-19 | 1998-11-17 | Integrated Device Technology, Inc. | Fully synchronous pipelined ram |
US5923601A (en) * | 1996-09-30 | 1999-07-13 | Advanced Micro Devices, Inc. | Memory array sense amplifier test and characterization |
US5920517A (en) * | 1996-09-30 | 1999-07-06 | Advanced Micro Devices, Inc. | Memory array test and characterization using isolated memory cell power supply |
US5930185A (en) * | 1997-09-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Data retention test for static memory cell |
US5936892A (en) * | 1996-09-30 | 1999-08-10 | Advanced Micro Devices, Inc. | Memory cell DC characterization apparatus and method |
JP3478953B2 (ja) * | 1997-09-03 | 2003-12-15 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
DE19738642A1 (de) * | 1997-09-04 | 1999-03-11 | Clariant Gmbh | Farbmittel mit optisch variablen Eigenschaften |
US6115320A (en) | 1998-02-23 | 2000-09-05 | Integrated Device Technology, Inc. | Separate byte control on fully synchronous pipelined SRAM |
US6628564B1 (en) * | 1998-06-29 | 2003-09-30 | Fujitsu Limited | Semiconductor memory device capable of driving non-selected word lines to first and second potentials |
KR100284743B1 (ko) * | 1999-01-06 | 2001-03-15 | 윤종용 | 저집적 디램 콘트롤러 장치와 연결되는 고집적 디램 반도체 장치 |
US6373753B1 (en) * | 1999-02-13 | 2002-04-16 | Robert J. Proebsting | Memory array having selected word lines driven to an internally-generated boosted voltage that is substantially independent of VDD |
US6356485B1 (en) | 1999-02-13 | 2002-03-12 | Integrated Device Technology, Inc. | Merging write cycles by comparing at least a portion of the respective write cycle addresses |
US7069406B2 (en) * | 1999-07-02 | 2006-06-27 | Integrated Device Technology, Inc. | Double data rate synchronous SRAM with 100% bus utilization |
JP2001160296A (ja) | 1999-12-01 | 2001-06-12 | Toshiba Corp | 電圧レベル変換回路及びこれを用いた半導体記憶装置 |
JP4651766B2 (ja) * | 1999-12-21 | 2011-03-16 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
US6343044B1 (en) * | 2000-10-04 | 2002-01-29 | International Business Machines Corporation | Super low-power generator system for embedded applications |
US6510088B2 (en) | 2001-03-22 | 2003-01-21 | Winbond Electronics Corporation | Semiconductor device having reduced leakage and method of operating the same |
JP3520283B2 (ja) * | 2002-04-16 | 2004-04-19 | 沖電気工業株式会社 | 半導体記憶装置 |
KR100526889B1 (ko) * | 2004-02-10 | 2005-11-09 | 삼성전자주식회사 | 핀 트랜지스터 구조 |
US7227383B2 (en) | 2004-02-19 | 2007-06-05 | Mosaid Delaware, Inc. | Low leakage and data retention circuitry |
JP2008065972A (ja) * | 2006-08-10 | 2008-03-21 | Nec Electronics Corp | 半導体記憶装置 |
FR2959057B1 (fr) * | 2010-04-20 | 2012-07-20 | St Microelectronics Crolles 2 | Dispositif de memoire vive dynamique avec circuiterie amelioree de commande des lignes de mots. |
US8547777B2 (en) * | 2010-12-22 | 2013-10-01 | Intel Corporation | Nor logic word line selection |
CN102332303B (zh) * | 2011-07-13 | 2014-07-23 | 清华大学 | 用于快闪存储器的负电压电平转换电路 |
JP2013030827A (ja) * | 2011-07-26 | 2013-02-07 | Toshiba Corp | レベルシフト回路 |
CN104882162B (zh) * | 2015-06-12 | 2019-05-31 | 中国电子科技集团公司第四十七研究所 | 字线电压转换驱动电路 |
US9882566B1 (en) * | 2017-01-10 | 2018-01-30 | Ememory Technology Inc. | Driving circuit for non-volatile memory |
US10509426B2 (en) | 2018-05-02 | 2019-12-17 | Analog Devices Global Unlimited Company | Methods and circuits for controlling and/or reducing current leakage during a low-power or inactive mode |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60209996A (ja) * | 1984-03-31 | 1985-10-22 | Toshiba Corp | 半導体記憶装置 |
US5257238A (en) * | 1991-07-11 | 1993-10-26 | Micron Technology, Inc. | Dynamic memory having access transistor turn-off state |
EP0559995B1 (de) * | 1992-03-11 | 1998-09-16 | STMicroelectronics S.r.l. | Dekodierschaltung fähig zur Ubertragung von positiven und negativen Spannungen |
US5416747A (en) * | 1992-07-15 | 1995-05-16 | Kawasaki Steel Corporation | Semiconductor memory driven at low voltage |
US5410508A (en) * | 1993-05-14 | 1995-04-25 | Micron Semiconductor, Inc. | Pumped wordlines |
JP3667787B2 (ja) * | 1994-05-11 | 2005-07-06 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
-
1995
- 1995-11-07 JP JP7288790A patent/JPH09134591A/ja not_active Withdrawn
-
1996
- 1996-10-22 DE DE69618747T patent/DE69618747T2/de not_active Expired - Lifetime
- 1996-10-22 EP EP96116986A patent/EP0773550B1/de not_active Expired - Lifetime
- 1996-10-30 US US08/742,181 patent/US5781481A/en not_active Expired - Lifetime
- 1996-10-30 TW TW085113233A patent/TW332333B/zh not_active IP Right Cessation
- 1996-11-06 KR KR1019960052341A patent/KR100327780B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0773550A3 (de) | 1999-05-19 |
EP0773550B1 (de) | 2002-01-23 |
DE69618747T2 (de) | 2004-05-06 |
TW332333B (en) | 1998-05-21 |
EP0773550A2 (de) | 1997-05-14 |
US5781481A (en) | 1998-07-14 |
JPH09134591A (ja) | 1997-05-20 |
KR100327780B1 (ko) | 2002-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP |