DE69612502D1 - Schneller wortleitungsdekodierer für speicheranordnungen - Google Patents

Schneller wortleitungsdekodierer für speicheranordnungen

Info

Publication number
DE69612502D1
DE69612502D1 DE69612502T DE69612502T DE69612502D1 DE 69612502 D1 DE69612502 D1 DE 69612502D1 DE 69612502 T DE69612502 T DE 69612502T DE 69612502 T DE69612502 T DE 69612502T DE 69612502 D1 DE69612502 D1 DE 69612502D1
Authority
DE
Germany
Prior art keywords
word line
line decoder
memory arrangements
fast word
fast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69612502T
Other languages
English (en)
Other versions
DE69612502T2 (de
Inventor
W Priebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Corp
Original Assignee
LSI Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
Application granted granted Critical
Publication of DE69612502D1 publication Critical patent/DE69612502D1/de
Publication of DE69612502T2 publication Critical patent/DE69612502T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69612502T 1995-09-13 1996-09-11 Schneller wortleitungsdekodierer für speicheranordnungen Expired - Lifetime DE69612502T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/527,704 US5604712A (en) 1995-09-13 1995-09-13 Fast word line decoder for memory devices
PCT/US1996/014814 WO1997010599A1 (en) 1995-09-13 1996-09-11 Fast word line decoder for memory devices

Publications (2)

Publication Number Publication Date
DE69612502D1 true DE69612502D1 (de) 2001-05-17
DE69612502T2 DE69612502T2 (de) 2001-09-06

Family

ID=24102585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69612502T Expired - Lifetime DE69612502T2 (de) 1995-09-13 1996-09-11 Schneller wortleitungsdekodierer für speicheranordnungen

Country Status (5)

Country Link
US (1) US5604712A (de)
EP (1) EP0850480B1 (de)
JP (1) JPH11512551A (de)
DE (1) DE69612502T2 (de)
WO (1) WO1997010599A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914906A (en) * 1995-12-20 1999-06-22 International Business Machines Corporation Field programmable memory array
US5657277A (en) * 1996-04-23 1997-08-12 Micron Technology, Inc. Memory device tracking circuit
KR100246180B1 (ko) * 1996-12-21 2000-03-15 김영환 비동기적으로 프리차지 및 활성화 되는 메모리의 기준 클럭 발생회로
KR100271625B1 (ko) * 1997-04-25 2000-12-01 김영환 어드레스 천이 합성회로
US5910922A (en) * 1997-08-05 1999-06-08 Integrated Device Technology, Inc. Method for testing data retention in a static random access memory using isolated Vcc supply
GB0118678D0 (en) * 2001-08-01 2001-09-19 Qinetiq Ltd Random access decoder
KR100477040B1 (ko) * 2001-09-10 2005-03-18 가부시끼가이샤 도시바 반도체 기억 장치
KR100618695B1 (ko) * 2004-03-18 2006-09-12 주식회사 하이닉스반도체 메모리 장치의 비트라인 선택신호 발생 장치
US7002861B2 (en) * 2004-04-16 2006-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device for controlling programming setup time
US7139215B2 (en) * 2004-11-05 2006-11-21 International Business Machines Corporation Apparatus and method of word line decoding for deep pipelined memory
US20070076512A1 (en) * 2005-09-30 2007-04-05 Castro Hernan A Three transistor wordline decoder
KR101157023B1 (ko) * 2010-07-29 2012-06-21 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 워드라인 디스차지방법
US9459650B2 (en) * 2014-03-17 2016-10-04 Qualcomm Incorporated Clock pulse generator for multi-phase signaling

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706975A (en) * 1970-10-09 1972-12-19 Texas Instruments Inc High speed mos random access memory
US4165504A (en) * 1978-04-13 1979-08-21 Motorola, Inc. CMOS Decoder
US4447895A (en) * 1979-10-04 1984-05-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
US4514829A (en) * 1982-12-30 1985-04-30 International Business Machines Corporation Word line decoder and driver circuits for high density semiconductor memory
US4774421A (en) * 1984-05-03 1988-09-27 Altera Corporation Programmable logic array device using EPROM technology
US5051959A (en) * 1985-08-14 1991-09-24 Fujitsu Limited Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type
US5022010A (en) * 1989-10-30 1991-06-04 International Business Machines Corporation Word decoder for a memory array
JPH04184793A (ja) * 1990-11-20 1992-07-01 Nec Corp 半導体デコード装置
US5391941A (en) * 1993-09-23 1995-02-21 Cypress Semiconductor Corporation Decoder circuitry with balanced propagation delay and minimized input capacitance

Also Published As

Publication number Publication date
WO1997010599A1 (en) 1997-03-20
DE69612502T2 (de) 2001-09-06
US5604712A (en) 1997-02-18
EP0850480B1 (de) 2001-04-11
JPH11512551A (ja) 1999-10-26
EP0850480A1 (de) 1998-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition