DE69224576D1 - Zeilendekodierer für NAND-ROM-Speichertyp - Google Patents

Zeilendekodierer für NAND-ROM-Speichertyp

Info

Publication number
DE69224576D1
DE69224576D1 DE69224576T DE69224576T DE69224576D1 DE 69224576 D1 DE69224576 D1 DE 69224576D1 DE 69224576 T DE69224576 T DE 69224576T DE 69224576 T DE69224576 T DE 69224576T DE 69224576 D1 DE69224576 D1 DE 69224576D1
Authority
DE
Germany
Prior art keywords
nand
row decoder
rom memory
memory type
rom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224576T
Other languages
English (en)
Other versions
DE69224576T2 (de
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69224576D1 publication Critical patent/DE69224576D1/de
Application granted granted Critical
Publication of DE69224576T2 publication Critical patent/DE69224576T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/10Decoders
DE69224576T 1991-08-30 1992-08-27 Zeilendekodierer für NAND-ROM-Speichertyp Expired - Fee Related DE69224576T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITVA910027A IT1253680B (it) 1991-08-30 1991-08-30 Decodificatore per rom di tipo nand

Publications (2)

Publication Number Publication Date
DE69224576D1 true DE69224576D1 (de) 1998-04-09
DE69224576T2 DE69224576T2 (de) 1998-11-12

Family

ID=11423147

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224576T Expired - Fee Related DE69224576T2 (de) 1991-08-30 1992-08-27 Zeilendekodierer für NAND-ROM-Speichertyp

Country Status (5)

Country Link
US (1) US5347493A (de)
EP (1) EP0534910B1 (de)
JP (1) JPH05303899A (de)
DE (1) DE69224576T2 (de)
IT (1) IT1253680B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808500A (en) * 1996-06-28 1998-09-15 Cypress Semiconductor Corporation Block architecture semiconductor memory array utilizing non-inverting pass gate local wordline driver
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
KR100481857B1 (ko) 2002-08-14 2005-04-11 삼성전자주식회사 레이아웃 면적을 줄이고 뱅크 마다 독립적인 동작을수행할 수 있는 디코더를 갖는 플레쉬 메모리 장치
US7623367B2 (en) * 2006-10-13 2009-11-24 Agere Systems Inc. Read-only memory device and related method of design

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489400A (en) * 1982-03-01 1984-12-18 Texas Instruments Incorporated Serially banked read only memory
NL8602178A (nl) * 1986-08-27 1988-03-16 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
US5241511A (en) * 1991-08-28 1993-08-31 Motorola, Inc. BiCMOS memory word line driver

Also Published As

Publication number Publication date
EP0534910A2 (de) 1993-03-31
EP0534910A3 (en) 1994-05-18
ITVA910027A1 (it) 1993-03-02
US5347493A (en) 1994-09-13
EP0534910B1 (de) 1998-03-04
JPH05303899A (ja) 1993-11-16
DE69224576T2 (de) 1998-11-12
IT1253680B (it) 1995-08-22
ITVA910027A0 (it) 1991-08-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee