DE69609573D1 - Vorrichtung und Verfahren zum Drehen eines Tiegels eines Kristallzuchtapparatus - Google Patents

Vorrichtung und Verfahren zum Drehen eines Tiegels eines Kristallzuchtapparatus

Info

Publication number
DE69609573D1
DE69609573D1 DE69609573T DE69609573T DE69609573D1 DE 69609573 D1 DE69609573 D1 DE 69609573D1 DE 69609573 T DE69609573 T DE 69609573T DE 69609573 T DE69609573 T DE 69609573T DE 69609573 D1 DE69609573 D1 DE 69609573D1
Authority
DE
Germany
Prior art keywords
crucible
rotating
crystal growing
growing apparatus
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69609573T
Other languages
English (en)
Other versions
DE69609573T2 (de
Inventor
Steven L Kimbel
Harold W Korb
Cynthia F Hall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69609573D1 publication Critical patent/DE69609573D1/de
Application granted granted Critical
Publication of DE69609573T2 publication Critical patent/DE69609573T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69609573T 1995-06-09 1996-05-24 Vorrichtung und Verfahren zum Drehen eines Tiegels eines Kristallzuchtapparatus Expired - Lifetime DE69609573T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/488,924 US5593498A (en) 1995-06-09 1995-06-09 Apparatus for rotating a crucible of a crystal pulling machine

Publications (2)

Publication Number Publication Date
DE69609573D1 true DE69609573D1 (de) 2000-09-07
DE69609573T2 DE69609573T2 (de) 2000-12-14

Family

ID=23941687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609573T Expired - Lifetime DE69609573T2 (de) 1995-06-09 1996-05-24 Vorrichtung und Verfahren zum Drehen eines Tiegels eines Kristallzuchtapparatus

Country Status (9)

Country Link
US (2) US5593498A (de)
EP (1) EP0747511B1 (de)
JP (1) JP3969767B2 (de)
KR (1) KR970001606A (de)
CN (1) CN1171459A (de)
DE (1) DE69609573T2 (de)
MY (1) MY132265A (de)
SG (1) SG49959A1 (de)
TW (1) TW300311B (de)

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JP3451819B2 (ja) * 1995-12-27 2003-09-29 信越半導体株式会社 単結晶引上装置
US5843186A (en) * 1996-12-20 1998-12-01 Implemed, Inc. Intraocular lens with antimicrobial activity
EP0947611A3 (de) * 1998-03-17 2002-03-20 Shin-Etsu Handotai Company Limited Verfahren zur Herstellung eines Silicium-Einkristalles und dadurch hergestellter Silicium-Einkristall
DE60334722D1 (de) * 2002-11-12 2010-12-09 Memc Electronic Materials Verfahren zur herstellung eines siliciumeinkristalie temperaturgradienten zu steuern
JP4193503B2 (ja) * 2003-01-31 2008-12-10 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
WO2006025420A1 (ja) * 2004-09-03 2006-03-09 Sumitomo Metal Industries, Ltd. 炭化珪素単結晶の製造方法
US20060138601A1 (en) * 2004-12-27 2006-06-29 Memc Electronic Materials, Inc. Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
JP4853802B2 (ja) * 2005-06-15 2012-01-11 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法
JP4862863B2 (ja) * 2008-06-09 2012-01-25 信越半導体株式会社 単結晶製造装置の駆動部の制御方法および単結晶製造装置
EP2382342A1 (de) 2008-12-30 2011-11-02 MEMC Singapore Pte. Ltd. Verfahren und ziehanordnungen zum ziehen eines blocks aus multikristallinem silicium aus einer siliciumschmelze
CN101935871A (zh) * 2010-09-04 2011-01-05 山西天能科技有限公司 一种降低单晶硅位错的方法
CN103290469A (zh) * 2012-02-24 2013-09-11 宁夏日晶新能源装备股份有限公司 带编码器的单晶炉
CN102628178A (zh) * 2012-05-10 2012-08-08 江苏聚能硅业有限公司 降低太阳能8寸单晶硅片氧含量的方法
JP5907045B2 (ja) * 2012-11-13 2016-04-20 信越半導体株式会社 シリコン単結晶の引き上げ方法
KR20240056775A (ko) * 2015-12-04 2024-04-30 글로벌웨이퍼스 씨오., 엘티디. 낮은 산소 함량 실리콘의 제조를 위한 시스템들 및 방법들
CN105483817B (zh) * 2015-12-09 2019-04-02 上海超硅半导体有限公司 单晶硅生长超声波控氧技术
JP6583142B2 (ja) * 2016-05-25 2019-10-02 株式会社Sumco シリコン単結晶の製造方法及び装置
KR102011210B1 (ko) 2018-01-18 2019-08-14 에스케이실트론 주식회사 단결정 잉곳 성장용 인상제어장치 및 이에 적용된 인상제어방법
CN109576785A (zh) * 2018-12-29 2019-04-05 徐州鑫晶半导体科技有限公司 调节单晶硅生长过程中氧含量的方法
CN110552058A (zh) * 2019-08-22 2019-12-10 宁夏隆基硅材料有限公司 一种拉晶方法、装置及设备
CN112831836A (zh) * 2020-12-30 2021-05-25 上海新昇半导体科技有限公司 拉晶方法和拉晶装置
CN114277441A (zh) * 2021-12-29 2022-04-05 宁夏中欣晶圆半导体科技有限公司 提高晶棒氧含量的方法及单晶炉

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DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
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DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
JPS54152683A (en) * 1978-05-23 1979-12-01 Sumitomo Electric Ind Ltd Growing method for single crystal
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon
US4551196A (en) * 1981-05-15 1985-11-05 U.S. Philips Corporation Method of growing crystalline cadmium mercury telluride and crystalline cadmium mercury telluride grown by the method
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS59156265A (ja) * 1983-02-25 1984-09-05 House Food Ind Co Ltd 即席カレ−の製造方法
DE3579080D1 (de) * 1984-09-04 1990-09-13 Forschungszentrum Juelich Gmbh Verfahren zur herstellung eines kristallinen koerpers aus der schmelze.
DE3432467C1 (de) * 1984-09-04 1986-03-27 Kernforschungsanlage Jülich GmbH, 5170 Jülich Stab- und Tiegelhalterung
DE3871601T2 (de) * 1987-04-13 1992-12-17 Ford New Holland Inc Rundballenpresse mit system fuer automatische kontrolle der ballenform und methode zum ballenformen.
US5215620A (en) * 1989-09-19 1993-06-01 Shin-Etsu Handotai Co. Ltd. Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate
JPH0699225B2 (ja) * 1989-10-23 1994-12-07 信越半導体株式会社 シリコン単結晶引上げ方法
US5246535A (en) * 1990-04-27 1993-09-21 Nkk Corporation Method and apparatus for controlling the diameter of a silicon single crystal
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JP2785532B2 (ja) * 1991-08-24 1998-08-13 信越半導体株式会社 単結晶棒引上育成制御装置
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Also Published As

Publication number Publication date
EP0747511A3 (de) 1997-03-05
KR970001606A (ko) 1997-01-24
MY132265A (en) 2007-09-28
JPH08337494A (ja) 1996-12-24
EP0747511B1 (de) 2000-08-02
JP3969767B2 (ja) 2007-09-05
DE69609573T2 (de) 2000-12-14
TW300311B (de) 1997-03-11
SG49959A1 (en) 1998-06-15
US5766341A (en) 1998-06-16
EP0747511A2 (de) 1996-12-11
CN1171459A (zh) 1998-01-28
US5593498A (en) 1997-01-14

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