DE69607109T2 - Vorrichtung und Verfahren zur Änderung des Drehratens eines Czochralski-Tiegels - Google Patents

Vorrichtung und Verfahren zur Änderung des Drehratens eines Czochralski-Tiegels

Info

Publication number
DE69607109T2
DE69607109T2 DE69607109T DE69607109T DE69607109T2 DE 69607109 T2 DE69607109 T2 DE 69607109T2 DE 69607109 T DE69607109 T DE 69607109T DE 69607109 T DE69607109 T DE 69607109T DE 69607109 T2 DE69607109 T2 DE 69607109T2
Authority
DE
Germany
Prior art keywords
changing
rotation rate
czochralski crucible
czochralski
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607109T
Other languages
English (en)
Other versions
DE69607109D1 (de
Inventor
Kouji Kitagawa
Kouji Mizuishi
Masahiko Urano
Kenji Araki
Eiichi Iino
Izumi Fusegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69607109D1 publication Critical patent/DE69607109D1/de
Publication of DE69607109T2 publication Critical patent/DE69607109T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69607109T 1995-12-06 1996-12-05 Vorrichtung und Verfahren zur Änderung des Drehratens eines Czochralski-Tiegels Expired - Lifetime DE69607109T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34437595A JP3898247B2 (ja) 1995-12-06 1995-12-06 単結晶の製造装置および製造方法

Publications (2)

Publication Number Publication Date
DE69607109D1 DE69607109D1 (de) 2000-04-20
DE69607109T2 true DE69607109T2 (de) 2000-09-21

Family

ID=18368759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607109T Expired - Lifetime DE69607109T2 (de) 1995-12-06 1996-12-05 Vorrichtung und Verfahren zur Änderung des Drehratens eines Czochralski-Tiegels

Country Status (6)

Country Link
US (1) US5938841A (de)
EP (1) EP0776997B1 (de)
JP (1) JP3898247B2 (de)
KR (1) KR100445862B1 (de)
DE (1) DE69607109T2 (de)
MY (1) MY112682A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE261336T1 (de) * 1998-12-07 2004-03-15 Hoffmann La Roche Verfahren und vorrichtung zum mischen oder dispergieren von flüssigkeiten
TWI236455B (en) * 2002-02-27 2005-07-21 Univ Nat Taiwan Method for growing stoichiometric lithium niobate and lithium tantalate single crystals and apparatus thereof
TWI283335B (en) * 2002-08-20 2007-07-01 Kyowa Yuka Kk A composition with photo-sensibility of visible light
KR100764394B1 (ko) * 2002-11-12 2007-10-05 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법
DE10259588B4 (de) * 2002-12-19 2008-06-19 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium
JP4853802B2 (ja) * 2005-06-15 2012-01-11 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法
JP4862863B2 (ja) * 2008-06-09 2012-01-25 信越半導体株式会社 単結晶製造装置の駆動部の制御方法および単結晶製造装置
JP5077299B2 (ja) * 2009-06-22 2012-11-21 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
JP6208416B2 (ja) * 2012-09-10 2017-10-04 豊田合成株式会社 ＧａＮ半導体単結晶の製造方法
GB2610554A (en) 2021-08-18 2023-03-15 Marlow Foods Ltd Edible fungus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2024649B (en) * 1978-06-15 1982-07-14 Vnii Monokristal Apparatus for pulling single crystal from melt on a seed
US4436577A (en) * 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
JPH0699225B2 (ja) * 1989-10-23 1994-12-07 信越半導体株式会社 シリコン単結晶引上げ方法
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
FI912773A0 (fi) * 1991-06-10 1991-06-10 Shippax Ltd Oy Foerfarande foer beslaoende av fartygsdaeck och daeckelement.
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates

Also Published As

Publication number Publication date
KR970043344A (ko) 1997-07-26
JP3898247B2 (ja) 2007-03-28
MY112682A (en) 2001-07-31
US5938841A (en) 1999-08-17
EP0776997A1 (de) 1997-06-04
EP0776997B1 (de) 2000-03-15
JPH09157085A (ja) 1997-06-17
DE69607109D1 (de) 2000-04-20
KR100445862B1 (ko) 2004-10-26

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