DE69605718T2 - Völlig selbstjustierter Submikrometer-Bipolartransistor mit einem Heteroübergang und Verfahren zu dessen Herstellung - Google Patents

Völlig selbstjustierter Submikrometer-Bipolartransistor mit einem Heteroübergang und Verfahren zu dessen Herstellung

Info

Publication number
DE69605718T2
DE69605718T2 DE69605718T DE69605718T DE69605718T2 DE 69605718 T2 DE69605718 T2 DE 69605718T2 DE 69605718 T DE69605718 T DE 69605718T DE 69605718 T DE69605718 T DE 69605718T DE 69605718 T2 DE69605718 T2 DE 69605718T2
Authority
DE
Germany
Prior art keywords
submicrometer
heterojunction
aligned
manufacture
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605718T
Other languages
English (en)
Other versions
DE69605718D1 (de
Inventor
Madjid Hafizi
William E Stanchina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Electronics Corp filed Critical Hughes Electronics Corp
Publication of DE69605718D1 publication Critical patent/DE69605718D1/de
Application granted granted Critical
Publication of DE69605718T2 publication Critical patent/DE69605718T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69605718T 1995-06-06 1996-05-30 Völlig selbstjustierter Submikrometer-Bipolartransistor mit einem Heteroübergang und Verfahren zu dessen Herstellung Expired - Fee Related DE69605718T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/470,811 US5665614A (en) 1995-06-06 1995-06-06 Method for making fully self-aligned submicron heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
DE69605718D1 DE69605718D1 (de) 2000-01-27
DE69605718T2 true DE69605718T2 (de) 2000-07-27

Family

ID=23869149

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605718T Expired - Fee Related DE69605718T2 (de) 1995-06-06 1996-05-30 Völlig selbstjustierter Submikrometer-Bipolartransistor mit einem Heteroübergang und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (2) US5665614A (de)
EP (1) EP0747964B1 (de)
JP (1) JPH09102504A (de)
DE (1) DE69605718T2 (de)

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EP1094523A3 (de) * 1999-10-21 2003-06-11 Matsushita Electric Industrial Co., Ltd. Lateraler Heteroübergangstransistor und Verfahren zur Herstellung
US6566693B1 (en) * 2000-09-19 2003-05-20 Hrl Laboratories, Llc Reduced capacitance scaled HBT using a separate base post layer
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KR20080103609A (ko) * 2001-05-30 2008-11-27 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
JP2003007840A (ja) * 2001-06-25 2003-01-10 Nec Corp 半導体装置及び半導体装置製造方法
US6525348B1 (en) * 2001-07-17 2003-02-25 David C. Scott Two terminal edge illuminated epilayer waveguide phototransistor
DE10152089A1 (de) * 2001-10-23 2003-05-08 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiter-Struktur
KR100456037B1 (ko) * 2001-10-24 2004-11-15 한국과학기술원 컬렉터의 역방향 선택적 식각을 이용한 이종접합 바이폴라 트랜지스터 제조방법
WO2003063228A1 (de) * 2002-01-25 2003-07-31 Mergeoptics Gmbh Verfahren zum herstellen eines hetero-bipolar-transistors
JP4015504B2 (ja) * 2002-08-09 2007-11-28 株式会社ルネサステクノロジ 半導体装置
US6949776B2 (en) * 2002-09-26 2005-09-27 Rockwell Scientific Licensing, Llc Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
DE10318422B4 (de) * 2003-04-23 2006-08-10 Infineon Technologies Ag Hochfrequenz-Bipolartransistor mit Silizidregion und Verfahren zur Herstellung desselben
US6806129B1 (en) * 2003-05-09 2004-10-19 Agilent Technologies, Inc. Self-aligned process using indium gallium arsenide etching to form reentry feature in heterojunction bipolar transistors
US6858887B1 (en) * 2003-07-30 2005-02-22 Innovative Technology Licensing Llc BJT device configuration and fabrication method with reduced emitter width
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US7259444B1 (en) 2004-07-20 2007-08-21 Hrl Laboratories, Llc Optoelectronic device with patterned ion implant subcollector
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US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
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US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
JPWO2007058265A1 (ja) * 2005-11-18 2009-05-07 独立行政法人科学技術振興機構 バイポーラトランジスタ及びその製造方法
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US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7759199B2 (en) * 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8546230B2 (en) 2011-11-15 2013-10-01 International Business Machines Corporation Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor
US8603883B2 (en) 2011-11-16 2013-12-10 International Business Machines Corporation Interface control in a bipolar junction transistor
US9059138B2 (en) 2012-01-25 2015-06-16 International Business Machines Corporation Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
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US9099397B1 (en) * 2012-03-22 2015-08-04 Hrl Laboratories, Llc Fabrication of self aligned base contacts for bipolar transistors
US9530708B1 (en) 2013-05-31 2016-12-27 Hrl Laboratories, Llc Flexible electronic circuit and method for manufacturing same
US9059196B2 (en) 2013-11-04 2015-06-16 International Business Machines Corporation Bipolar junction transistors with self-aligned terminals
US9111986B2 (en) 2014-01-09 2015-08-18 International Business Machines Corporation Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
US9312370B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Bipolar transistor with extrinsic base region and methods of fabrication
US9570564B2 (en) 2014-08-05 2017-02-14 Globalfoundries Inc. Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance
US9892958B2 (en) 2014-12-02 2018-02-13 Globalfoundries Inc. Contact module for optimizing emitter and contact resistance
US20160169833A1 (en) * 2014-12-11 2016-06-16 International Business Machines Corporation Biosensor based on heterojunction bipolar transistor
US10622465B2 (en) * 2017-12-20 2020-04-14 Qualcomm Incorporated Heterojunction bipolar transistor (HBT)

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Also Published As

Publication number Publication date
US5665614A (en) 1997-09-09
DE69605718D1 (de) 2000-01-27
JPH09102504A (ja) 1997-04-15
EP0747964A2 (de) 1996-12-11
EP0747964B1 (de) 1999-12-22
US5729033A (en) 1998-03-17
EP0747964A3 (de) 1997-12-17

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8339 Ceased/non-payment of the annual fee