DE69601515T2 - Halbleiteranordnung mit Kompressionsverbindung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiteranordnung mit Kompressionsverbindung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69601515T2
DE69601515T2 DE1996601515 DE69601515T DE69601515T2 DE 69601515 T2 DE69601515 T2 DE 69601515T2 DE 1996601515 DE1996601515 DE 1996601515 DE 69601515 T DE69601515 T DE 69601515T DE 69601515 T2 DE69601515 T2 DE 69601515T2
Authority
DE
Germany
Prior art keywords
production
semiconductor device
compression connection
compression
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1996601515
Other languages
English (en)
Other versions
DE69601515D1 (de
Inventor
Kazunori Taguchi
Yuzuru Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69601515D1 publication Critical patent/DE69601515D1/de
Application granted granted Critical
Publication of DE69601515T2 publication Critical patent/DE69601515T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
DE1996601515 1995-05-31 1996-03-28 Halbleiteranordnung mit Kompressionsverbindung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69601515T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13391995A JP3291977B2 (ja) 1995-05-31 1995-05-31 圧接型半導体素子及びその製造方法並びに圧接型半導体装置

Publications (2)

Publication Number Publication Date
DE69601515D1 DE69601515D1 (de) 1999-03-25
DE69601515T2 true DE69601515T2 (de) 1999-07-08

Family

ID=15116159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1996601515 Expired - Fee Related DE69601515T2 (de) 1995-05-31 1996-03-28 Halbleiteranordnung mit Kompressionsverbindung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5777351A (de)
EP (1) EP0746021B1 (de)
JP (1) JP3291977B2 (de)
DE (1) DE69601515T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19711965C2 (de) * 1997-03-21 1999-01-14 Siemens Ag Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung
JPH10271804A (ja) * 1997-03-28 1998-10-09 Mitsubishi Electric Corp 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3422211B2 (ja) * 1997-03-28 2003-06-30 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3371069B2 (ja) * 1997-03-28 2003-01-27 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3371068B2 (ja) * 1997-03-28 2003-01-27 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3371070B2 (ja) * 1997-03-28 2003-01-27 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3376243B2 (ja) * 1997-05-09 2003-02-10 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3376245B2 (ja) * 1997-05-22 2003-02-10 三菱電機株式会社 半導体スイッチング装置、これを使用した半導体スタック装置および電力変換装置
JP3480901B2 (ja) * 1998-06-18 2003-12-22 株式会社東芝 圧接形半導体素子および電力変換装置
JP4129082B2 (ja) * 1998-07-30 2008-07-30 三菱電機株式会社 圧接型半導体装置及びそのリング状ゲート端子並びに電力応用装置
WO2000016394A1 (fr) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur a contact par pression
EP1065729A4 (de) * 1999-01-18 2004-05-26 Mitsubishi Electric Corp Kompressionsgebondeter halbleiter
EP1065730B1 (de) * 1999-01-18 2006-11-29 Mitsubishi Denki Kabushiki Kaisha Unter druck kontaktiertes halbleiterbauelement
JP2001036002A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
US6445013B1 (en) 2000-04-13 2002-09-03 Mitsubishi Denki Kabushiki Kaisha Gate commutated turn-off semiconductor device
JP4073801B2 (ja) * 2003-02-12 2008-04-09 三菱電機株式会社 圧接型半導体装置
JP4504233B2 (ja) * 2005-03-14 2010-07-14 三菱電機株式会社 半導体装置およびその製造方法
US7800156B2 (en) * 2008-02-25 2010-09-21 Tower Semiconductor Ltd. Asymmetric single poly NMOS non-volatile memory cell
JP6474790B2 (ja) 2013-05-13 2019-02-27 アーベーベー・テクノロジー・アーゲー 半導体スイッチング素子のためのスペーサシステム
JP2015056487A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN111933588B (zh) * 2020-06-24 2022-04-29 株洲中车时代半导体有限公司 一种igct封装结构

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
DE2257078A1 (de) * 1972-11-21 1974-05-30 Siemens Ag Halbleiterbauelement mit druckkontakt
SE373689B (sv) * 1973-06-12 1975-02-10 Asea Ab Halvledaranordning bestaende av en tyristor med styrelektrod, vars halvledarskiva er innesluten i en dosa
JPS6055633A (ja) * 1983-09-07 1985-03-30 Hitachi Ltd 半導体装置
JPS634977A (ja) * 1986-06-25 1988-01-09 Nec Corp ステッピングモ−タの制御方法
JPH0666463B2 (ja) * 1986-08-18 1994-08-24 三菱電機株式会社 ゲ−トタ−ンオフサイリスタ装置
EP0320618A1 (de) * 1987-12-14 1989-06-21 BBC Brown Boveri AG Gehäuse für einen abschaltbaren Leistungsthyristor (GTO)
JP2667027B2 (ja) * 1989-12-28 1997-10-22 株式会社東芝 圧接型半導体装置
JPH04352457A (ja) * 1991-05-30 1992-12-07 Mitsubishi Electric Corp 圧接型半導体装置及びその製造方法
JP2777757B2 (ja) * 1991-09-17 1998-07-23 鐘淵化学工業株式会社 共重合体およびその製造方法
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement

Also Published As

Publication number Publication date
EP0746021A2 (de) 1996-12-04
EP0746021B1 (de) 1999-02-10
JP3291977B2 (ja) 2002-06-17
DE69601515D1 (de) 1999-03-25
JPH08330572A (ja) 1996-12-13
EP0746021A3 (de) 1996-12-18
US5777351A (en) 1998-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee