DE69532430D1 - Ein Herstellungsverfahren einer Rückreflektorschicht für ein photovoltaisches Bauelement - Google Patents
Ein Herstellungsverfahren einer Rückreflektorschicht für ein photovoltaisches BauelementInfo
- Publication number
- DE69532430D1 DE69532430D1 DE69532430T DE69532430T DE69532430D1 DE 69532430 D1 DE69532430 D1 DE 69532430D1 DE 69532430 T DE69532430 T DE 69532430T DE 69532430 T DE69532430 T DE 69532430T DE 69532430 D1 DE69532430 D1 DE 69532430D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- reflector layer
- photovoltaic component
- back reflector
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19934394A JP3651932B2 (ja) | 1994-08-24 | 1994-08-24 | 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法 |
JP19934394 | 1994-08-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69532430D1 true DE69532430D1 (de) | 2004-02-19 |
DE69532430T2 DE69532430T2 (de) | 2004-12-02 |
Family
ID=16406203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69532430T Expired - Fee Related DE69532430T2 (de) | 1994-08-24 | 1995-08-23 | Ein Herstellungsverfahren einer Rückreflektorschicht für ein photovoltaisches Bauelement |
Country Status (6)
Country | Link |
---|---|
US (1) | US5620530A (de) |
EP (1) | EP0698929B1 (de) |
JP (1) | JP3651932B2 (de) |
KR (1) | KR100237661B1 (de) |
CN (1) | CN1057872C (de) |
DE (1) | DE69532430T2 (de) |
Families Citing this family (75)
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JP2984595B2 (ja) * | 1996-03-01 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
JPH10178193A (ja) * | 1996-12-18 | 1998-06-30 | Canon Inc | 光起電力素子の製造方法 |
DE19713215A1 (de) * | 1997-03-27 | 1998-10-08 | Forschungszentrum Juelich Gmbh | Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle |
EP0915523A3 (de) * | 1997-10-29 | 2005-11-02 | Canon Kabushiki Kaisha | Photovoltaisches Bauelement mit einer durchsichtigen und elektrisch leitenden, an der Oberfläche eine Region mit spezifischem Querschnitt aufweisenden Schicht an der Rückseite, und ein Modul mit solchem photovoltaischem Bauelement |
FR2771855B1 (fr) * | 1997-12-01 | 1999-12-31 | Commissariat Energie Atomique | Dispositif de photodetection, procede de fabrication de ce dispositif et application a la detection multispectrale |
JP2001345460A (ja) * | 2000-03-29 | 2001-12-14 | Sanyo Electric Co Ltd | 太陽電池装置 |
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US6930025B2 (en) * | 2001-02-01 | 2005-08-16 | Canon Kabushiki Kaisha | Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device |
JP2003013218A (ja) * | 2001-06-29 | 2003-01-15 | Canon Inc | 長時間スパッタリング方法 |
WO2003075363A1 (en) * | 2002-03-06 | 2003-09-12 | Sharp Kabushiki Kaisha | Photoelectric converting device and its production method |
JP4240933B2 (ja) * | 2002-07-18 | 2009-03-18 | キヤノン株式会社 | 積層体形成方法 |
WO2004032189A2 (en) | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
JP2009164644A (ja) * | 2003-04-14 | 2009-07-23 | Fuji Electric Systems Co Ltd | 導電性光反射膜、薄膜太陽電池用基板およびそれを適用した薄膜太陽電池 |
JP2004356623A (ja) | 2003-05-08 | 2004-12-16 | Canon Inc | 積層型光起電力素子及びその製造方法 |
KR100892967B1 (ko) * | 2004-07-22 | 2009-04-10 | 니폰덴신뎅와 가부시키가이샤 | 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물박막 및 그 제조방법 |
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JPH06196738A (ja) * | 1992-12-24 | 1994-07-15 | Canon Inc | 太陽電池の製法 |
JP2886014B2 (ja) * | 1992-12-24 | 1999-04-26 | キヤノン株式会社 | 太陽電池陽反射膜及びその形成方法並びに太陽電池及びその製造法 |
JP2771414B2 (ja) * | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
-
1994
- 1994-08-24 JP JP19934394A patent/JP3651932B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-15 US US08/515,296 patent/US5620530A/en not_active Expired - Fee Related
- 1995-08-23 DE DE69532430T patent/DE69532430T2/de not_active Expired - Fee Related
- 1995-08-23 EP EP95113240A patent/EP0698929B1/de not_active Expired - Lifetime
- 1995-08-23 KR KR1019950026060A patent/KR100237661B1/ko not_active IP Right Cessation
- 1995-08-24 CN CN95116679A patent/CN1057872C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR960009239A (ko) | 1996-03-22 |
CN1057872C (zh) | 2000-10-25 |
DE69532430T2 (de) | 2004-12-02 |
KR100237661B1 (ko) | 2000-01-15 |
CN1125357A (zh) | 1996-06-26 |
EP0698929A2 (de) | 1996-02-28 |
JPH0864849A (ja) | 1996-03-08 |
US5620530A (en) | 1997-04-15 |
EP0698929A3 (de) | 1998-06-03 |
EP0698929B1 (de) | 2004-01-14 |
JP3651932B2 (ja) | 2005-05-25 |
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