DE69528916D1 - Synchroner Speicher mit parallelen Ausgangsdatenwegen - Google Patents

Synchroner Speicher mit parallelen Ausgangsdatenwegen

Info

Publication number
DE69528916D1
DE69528916D1 DE69528916T DE69528916T DE69528916D1 DE 69528916 D1 DE69528916 D1 DE 69528916D1 DE 69528916 T DE69528916 T DE 69528916T DE 69528916 T DE69528916 T DE 69528916T DE 69528916 D1 DE69528916 D1 DE 69528916D1
Authority
DE
Germany
Prior art keywords
output data
data paths
parallel output
synchronous memory
synchronous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69528916T
Other languages
English (en)
Other versions
DE69528916T2 (de
Inventor
Stephen T Flannagan
Ray Chang
Kenneth W Jones
Roger I Kung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69528916D1 publication Critical patent/DE69528916D1/de
Application granted granted Critical
Publication of DE69528916T2 publication Critical patent/DE69528916T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
DE69528916T 1994-03-08 1995-03-06 Synchroner Speicher mit parallelen Ausgangsdatenwegen Expired - Lifetime DE69528916T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/207,513 US5402389A (en) 1994-03-08 1994-03-08 Synchronous memory having parallel output data paths

Publications (2)

Publication Number Publication Date
DE69528916D1 true DE69528916D1 (de) 2003-01-09
DE69528916T2 DE69528916T2 (de) 2003-05-28

Family

ID=22770901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528916T Expired - Lifetime DE69528916T2 (de) 1994-03-08 1995-03-06 Synchroner Speicher mit parallelen Ausgangsdatenwegen

Country Status (6)

Country Link
US (1) US5402389A (de)
EP (1) EP0671744B1 (de)
JP (1) JPH07262780A (de)
KR (1) KR100341944B1 (de)
DE (1) DE69528916T2 (de)
TW (1) TW255059B (de)

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KR100265599B1 (ko) * 1997-12-31 2000-10-02 김영환 데이터 윈도우 제어장치 및 그 방법
JP3789222B2 (ja) * 1998-01-16 2006-06-21 富士通株式会社 Ｄｌｌ回路及びそれを内蔵するメモリデバイス
US6433607B2 (en) 1998-01-21 2002-08-13 Fujitsu Limited Input circuit and semiconductor integrated circuit having the input circuit
US6269451B1 (en) 1998-02-27 2001-07-31 Micron Technology, Inc. Method and apparatus for adjusting data timing by delaying clock signal
US5923615A (en) * 1998-04-17 1999-07-13 Motorlola Synchronous pipelined burst memory and method for operating same
US6067649A (en) * 1998-06-10 2000-05-23 Compaq Computer Corporation Method and apparatus for a low power self test of a memory subsystem
US6338127B1 (en) 1998-08-28 2002-01-08 Micron Technology, Inc. Method and apparatus for resynchronizing a plurality of clock signals used to latch respective digital signals, and memory device using same
US6349399B1 (en) 1998-09-03 2002-02-19 Micron Technology, Inc. Method and apparatus for generating expect data from a captured bit pattern, and memory device using same
US6430696B1 (en) 1998-11-30 2002-08-06 Micron Technology, Inc. Method and apparatus for high speed data capture utilizing bit-to-bit timing correction, and memory device using same
US6374360B1 (en) 1998-12-11 2002-04-16 Micron Technology, Inc. Method and apparatus for bit-to-bit timing correction of a high speed memory bus
US6285216B1 (en) * 1998-12-17 2001-09-04 United Microelectronics Corporation High speed output enable path and method for an integrated circuit device
US6470060B1 (en) * 1999-03-01 2002-10-22 Micron Technology, Inc. Method and apparatus for generating a phase dependent control signal
US6064600A (en) 1999-03-01 2000-05-16 Micron Technology, Inc. Methods and apparatus for reading memory device register data
US6956920B1 (en) * 1999-03-22 2005-10-18 Altera Corporation Apparatus and method for low power routing of signals in a Low Voltage Differential Signaling system
JP4266436B2 (ja) * 1999-04-28 2009-05-20 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
JP2001023372A (ja) * 1999-05-06 2001-01-26 Mitsubishi Electric Corp 同期型半導体記憶装置
KR100328594B1 (ko) * 1999-07-12 2002-03-14 윤종용 늦은 라이트 타입 반도체 메모리 장치에서의 바이패스 동작 에러방지 및 사이클 타임구간 개선방법과 그에 따른 멀티플렉서 회로
US6516363B1 (en) 1999-08-06 2003-02-04 Micron Technology, Inc. Output data path having selectable data rates
US6694416B1 (en) 1999-09-02 2004-02-17 Micron Technology, Inc. Double data rate scheme for data output
US6421280B1 (en) * 2000-05-31 2002-07-16 Intel Corporation Method and circuit for loading data and reading data
US6801989B2 (en) 2001-06-28 2004-10-05 Micron Technology, Inc. Method and system for adjusting the timing offset between a clock signal and respective digital signals transmitted along with that clock signal, and memory device and computer system using same
US6779074B2 (en) * 2001-07-13 2004-08-17 Micron Technology, Inc. Memory device having different burst order addressing for read and write operations
KR100427037B1 (ko) 2001-09-24 2004-04-14 주식회사 하이닉스반도체 적응적 출력 드라이버를 갖는 반도체 기억장치
US7051264B2 (en) * 2001-11-14 2006-05-23 Monolithic System Technology, Inc. Error correcting memory and method of operating same
US6930949B2 (en) * 2002-08-26 2005-08-16 Micron Technology, Inc. Power savings in active standby mode
US7168027B2 (en) 2003-06-12 2007-01-23 Micron Technology, Inc. Dynamic synchronization of data capture on an optical or other high speed communications link
US7234070B2 (en) * 2003-10-27 2007-06-19 Micron Technology, Inc. System and method for using a learning sequence to establish communications on a high-speed nonsynchronous interface in the absence of clock forwarding
US7430140B1 (en) 2004-09-24 2008-09-30 Cypress Semiconductor Corporation Method and device for improved data valid window in response to temperature variation
US7392456B2 (en) * 2004-11-23 2008-06-24 Mosys, Inc. Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory
US7385860B2 (en) * 2005-06-10 2008-06-10 Hynix Semiconductor Inc. Data output circuit of synchronous memory device
US7245552B2 (en) * 2005-06-22 2007-07-17 Infineon Technologies Ag Parallel data path architecture
KR100694978B1 (ko) * 2006-05-12 2007-03-14 주식회사 하이닉스반도체 데이터 입출력 속도를 증가시키는 구조를 가지는 플래시메모리 장치 및 그 데이터 입출력 동작 방법
JP5142868B2 (ja) * 2008-07-17 2013-02-13 株式会社東芝 キャッシュメモリ制御回路及びプロセッサ
US10170166B1 (en) * 2017-09-08 2019-01-01 Winbond Electronics Corp. Data transmission apparatus for memory and data transmission method thereof

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Also Published As

Publication number Publication date
KR100341944B1 (ko) 2002-11-22
US5402389A (en) 1995-03-28
KR950034253A (ko) 1995-12-26
DE69528916T2 (de) 2003-05-28
EP0671744A3 (de) 1998-11-18
JPH07262780A (ja) 1995-10-13
TW255059B (en) 1995-08-21
EP0671744A2 (de) 1995-09-13
EP0671744B1 (de) 2002-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US