DE69515876D1 - Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren - Google Patents
Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen HerstellungsverfahrenInfo
- Publication number
- DE69515876D1 DE69515876D1 DE69515876T DE69515876T DE69515876D1 DE 69515876 D1 DE69515876 D1 DE 69515876D1 DE 69515876 T DE69515876 T DE 69515876T DE 69515876 T DE69515876 T DE 69515876T DE 69515876 D1 DE69515876 D1 DE 69515876D1
- Authority
- DE
- Germany
- Prior art keywords
- capacity
- manufacturing process
- power device
- low output
- output resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95830468A EP0772244B1 (de) | 1995-11-06 | 1995-11-06 | Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69515876D1 true DE69515876D1 (de) | 2000-04-27 |
DE69515876T2 DE69515876T2 (de) | 2000-08-17 |
Family
ID=8222050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69515876T Expired - Fee Related DE69515876T2 (de) | 1995-11-06 | 1995-11-06 | Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5900662A (de) |
EP (1) | EP0772244B1 (de) |
JP (1) | JPH09232567A (de) |
DE (1) | DE69515876T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69534919T2 (de) | 1995-10-30 | 2007-01-25 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe |
EP0772241B1 (de) | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | Leistungsbauteil hoher Dichte in MOS-Technologie |
FR2767964B1 (fr) * | 1997-09-04 | 2001-06-08 | St Microelectronics Sa | Procede de realisation de la zone de canal d'un transistor dmos |
US6121089A (en) * | 1997-10-17 | 2000-09-19 | Intersil Corporation | Methods of forming power semiconductor devices having merged split-well body regions therein |
EP0961325B1 (de) | 1998-05-26 | 2008-05-07 | STMicroelectronics S.r.l. | MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte |
DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
DE19854915C2 (de) * | 1998-11-27 | 2002-09-05 | Infineon Technologies Ag | MOS-Feldeffekttransistor mit Hilfselektrode |
DE69833743T2 (de) | 1998-12-09 | 2006-11-09 | Stmicroelectronics S.R.L., Agrate Brianza | Herstellungmethode einer integrierte Randstruktur für Hochspannung-Halbleiteranordnungen |
US7589007B2 (en) * | 1999-06-02 | 2009-09-15 | Arizona Board Of Regents For And On Behalf Of Arizona State University | MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
US6627961B1 (en) | 2000-05-05 | 2003-09-30 | International Rectifier Corporation | Hybrid IGBT and MOSFET for zero current at zero voltage |
US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US20030006483A1 (en) * | 2001-03-28 | 2003-01-09 | International Rectifier Corp. | Short channel power MOSFET with increased breakdown voltage |
DE60220912T2 (de) * | 2001-05-07 | 2008-02-28 | Advanced Micro Devices, Inc., Sunnyvale | Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben |
AU2002340793A1 (en) * | 2001-05-07 | 2002-11-18 | Coatue Corporation | Molecular memory device |
WO2002091496A2 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
US6809955B2 (en) * | 2001-05-07 | 2004-10-26 | Advanced Micro Devices, Inc. | Addressable and electrically reversible memory switch |
WO2002091385A1 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6627944B2 (en) | 2001-05-07 | 2003-09-30 | Advanced Micro Devices, Inc. | Floating gate memory device using composite molecular material |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
EP1434232B1 (de) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Speicherzelle |
US6825514B2 (en) | 2001-11-09 | 2004-11-30 | Infineon Technologies Ag | High-voltage semiconductor component |
US6819089B2 (en) | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
KR100433407B1 (ko) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | 업라이트형 진공청소기 |
US7012276B2 (en) * | 2002-09-17 | 2006-03-14 | Advanced Micro Devices, Inc. | Organic thin film Zener diodes |
US6969657B2 (en) * | 2003-03-25 | 2005-11-29 | International Rectifier Corporation | Superjunction device and method of manufacture therefor |
JP2007173675A (ja) * | 2005-12-26 | 2007-07-05 | Toyota Central Res & Dev Lab Inc | 半導体装置とその製造方法 |
CN101589471B (zh) | 2007-01-04 | 2012-05-23 | 飞思卡尔半导体公司 | 半导体器件及形成半导体器件的方法 |
JP5326217B2 (ja) * | 2007-03-15 | 2013-10-30 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5682097B2 (ja) * | 2008-05-15 | 2015-03-11 | 富士電機株式会社 | 半導体装置 |
JP5439763B2 (ja) * | 2008-08-14 | 2014-03-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2014086569A (ja) * | 2012-10-24 | 2014-05-12 | Renesas Electronics Corp | 縦型パワーmosfet |
Family Cites Families (44)
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JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
JPS5553462A (en) | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5008725C2 (en) * | 1979-05-14 | 2001-05-01 | Internat Rectifer Corp | Plural polygon source pattern for mosfet |
JPS55163877A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Semiconductor integrated circuit device |
US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
JPS58206174A (ja) * | 1982-05-26 | 1983-12-01 | Toshiba Corp | メサ型半導体装置およびその製造方法 |
DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
US5286984A (en) * | 1984-05-30 | 1994-02-15 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
US4605948A (en) * | 1984-08-02 | 1986-08-12 | Rca Corporation | Semiconductor structure for electric field distribution |
EP0211972A1 (de) * | 1985-08-07 | 1987-03-04 | Eaton Corporation | EFET mit erhöhter Torelektrode |
JPS6247162A (ja) * | 1985-08-27 | 1987-02-28 | Matsushita Electric Works Ltd | 絶縁ゲ−ト型電界効果トランジスタの作製方法 |
JPH0758782B2 (ja) * | 1986-03-19 | 1995-06-21 | 株式会社東芝 | 半導体装置 |
JPH07120794B2 (ja) * | 1986-07-09 | 1995-12-20 | 株式会社東芝 | Mos型半導体装置 |
EP0279403A3 (de) * | 1987-02-16 | 1988-12-07 | Nec Corporation | Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit |
JPH01272163A (ja) * | 1987-08-07 | 1989-10-31 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH0766968B2 (ja) * | 1987-08-24 | 1995-07-19 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
DE3902300C3 (de) * | 1988-01-30 | 1995-02-09 | Toshiba Kawasaki Kk | Abschaltthyristor |
JPH0783119B2 (ja) * | 1988-08-25 | 1995-09-06 | 日本電気株式会社 | 電界効果トランジスタ |
US4901127A (en) * | 1988-10-07 | 1990-02-13 | General Electric Company | Circuit including a combined insulated gate bipolar transistor/MOSFET |
JPH02143566A (ja) * | 1988-11-25 | 1990-06-01 | Toshiba Corp | 二重拡散形絶縁ゲート電界効果トランジスタ |
JPH0834312B2 (ja) * | 1988-12-06 | 1996-03-29 | 富士電機株式会社 | 縦形電界効果トランジスタ |
JP2787921B2 (ja) * | 1989-01-06 | 1998-08-20 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JPH02239670A (ja) * | 1989-03-14 | 1990-09-21 | Fujitsu Ltd | 半導体装置 |
US4998151A (en) * | 1989-04-13 | 1991-03-05 | General Electric Company | Power field effect devices having small cell size and low contact resistance |
JPH077750B2 (ja) * | 1989-05-15 | 1995-01-30 | 株式会社東芝 | 半導体装置の製造方法 |
JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
US4927772A (en) * | 1989-05-30 | 1990-05-22 | General Electric Company | Method of making high breakdown voltage semiconductor device |
US5208471A (en) * | 1989-06-12 | 1993-05-04 | Hitachi, Ltd. | Semiconductor device and manufacturing method therefor |
JP2689703B2 (ja) * | 1989-08-03 | 1997-12-10 | 富士電機株式会社 | Mos型半導体装置 |
JPH03185737A (ja) * | 1989-12-14 | 1991-08-13 | Toshiba Corp | 半導体装置の製造方法 |
JP2573736B2 (ja) * | 1990-09-18 | 1997-01-22 | 三菱電機株式会社 | 高耐圧低抵抗半導体装置及びその製造方法 |
EP0481153B1 (de) * | 1990-10-16 | 1997-02-12 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom |
JPH04256367A (ja) * | 1991-02-08 | 1992-09-11 | Hitachi Ltd | 半導体素子 |
JPH04349660A (ja) * | 1991-05-28 | 1992-12-04 | Toshiba Corp | 半導体装置及び製造方法 |
JP3156300B2 (ja) * | 1991-10-07 | 2001-04-16 | 株式会社デンソー | 縦型半導体装置 |
JPH05206470A (ja) * | 1991-11-20 | 1993-08-13 | Nec Corp | 絶縁ゲート型電界効果トランジスタ |
US5317184A (en) * | 1992-11-09 | 1994-05-31 | Harris Corporation | Device and method for improving current carrying capability in a semiconductor device |
JPH06342914A (ja) * | 1993-06-01 | 1994-12-13 | Nec Corp | 半導体装置の製造方法 |
EP0632503B1 (de) * | 1993-07-01 | 2001-10-31 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Integrierte Randstruktur für Hochspannung-Halbleiteranordnungen und dazugehöriger Herstellungsprozess |
JP2870402B2 (ja) * | 1994-03-10 | 1999-03-17 | 株式会社デンソー | 絶縁ゲート型電界効果トランジスタ |
US5539232A (en) * | 1994-05-31 | 1996-07-23 | Kabushiki Kaisha Toshiba | MOS composite type semiconductor device |
EP0696054B1 (de) * | 1994-07-04 | 2002-02-20 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie |
-
1995
- 1995-11-06 EP EP95830468A patent/EP0772244B1/de not_active Expired - Lifetime
- 1995-11-06 DE DE69515876T patent/DE69515876T2/de not_active Expired - Fee Related
-
1996
- 1996-11-04 US US08/740,713 patent/US5900662A/en not_active Expired - Lifetime
- 1996-11-06 JP JP8294062A patent/JPH09232567A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0772244A1 (de) | 1997-05-07 |
DE69515876T2 (de) | 2000-08-17 |
EP0772244B1 (de) | 2000-03-22 |
JPH09232567A (ja) | 1997-09-05 |
US5900662A (en) | 1999-05-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |