DE69426233D1 - Thermoelektrische materialien mit höherer leistung und herstellungsverfahren - Google Patents

Thermoelektrische materialien mit höherer leistung und herstellungsverfahren

Info

Publication number
DE69426233D1
DE69426233D1 DE69426233T DE69426233T DE69426233D1 DE 69426233 D1 DE69426233 D1 DE 69426233D1 DE 69426233 T DE69426233 T DE 69426233T DE 69426233 T DE69426233 T DE 69426233T DE 69426233 D1 DE69426233 D1 DE 69426233D1
Authority
DE
Germany
Prior art keywords
manufacturing process
higher performance
thermoelectric materials
thermoelectric
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69426233T
Other languages
English (en)
Other versions
DE69426233T2 (de
Inventor
Jean-Pierre Fleurial
F Caillat
Alexander Borshchevsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/101,901 external-priority patent/US5769943A/en
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of DE69426233D1 publication Critical patent/DE69426233D1/de
Application granted granted Critical
Publication of DE69426233T2 publication Critical patent/DE69426233T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
DE69426233T 1993-08-03 1994-07-28 Thermoelektrische materialien mit höherer leistung und herstellungsverfahren Expired - Lifetime DE69426233T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/101,901 US5769943A (en) 1993-08-03 1993-08-03 Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques
US08/189,087 US5610366A (en) 1993-08-03 1994-01-28 High performance thermoelectric materials and methods of preparation
PCT/US1994/008452 WO1995004377A1 (en) 1993-08-03 1994-07-28 High performance thermoelectric materials and methods of preparation

Publications (2)

Publication Number Publication Date
DE69426233D1 true DE69426233D1 (de) 2000-12-07
DE69426233T2 DE69426233T2 (de) 2001-06-21

Family

ID=26798781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69426233T Expired - Lifetime DE69426233T2 (de) 1993-08-03 1994-07-28 Thermoelektrische materialien mit höherer leistung und herstellungsverfahren

Country Status (6)

Country Link
US (2) US5610366A (de)
EP (1) EP0712537B1 (de)
JP (1) JP3845803B2 (de)
AU (1) AU7515394A (de)
DE (1) DE69426233T2 (de)
WO (1) WO1995004377A1 (de)

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US5831286A (en) * 1995-06-30 1998-11-03 California Institute Of Technology High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices
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US5883563A (en) * 1996-05-01 1999-03-16 Yamaha Corporation Thermo-electric material having mean crystal grain diameter nor greater than 50 microns and mean aspect ratio between 1 and 3 for large figure of merit and thermo-electric element using the same
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US5994639A (en) * 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds
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KR20210121057A (ko) 2019-02-01 2021-10-07 디티피 써모일렉트릭스 엘엘씨 공간 가변 분산 전송 특성에 기초한 향상된 최대 온도차를 갖는 열전 소자 및 장치
RU2739887C1 (ru) * 2020-05-06 2020-12-29 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" СПОСОБ ПОЛУЧЕНИЯ ТЕРМОЭЛЕКТРИЧЕСКОГО МАТЕРИАЛА n-ТИПА ПРОВОДИМОСТИ НА ОСНОВЕ ТВЕРДОГО РАСТВОРА Gex-δSi1-xSbδ ПРИ х=0,26-0,36, δ=0,008-0,01
CN116209588A (zh) 2020-06-15 2023-06-02 Dtp热电体有限责任公司 热电增强混合热泵系统

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Also Published As

Publication number Publication date
AU7515394A (en) 1995-02-28
EP0712537A1 (de) 1996-05-22
EP0712537B1 (de) 2000-11-02
US5610366A (en) 1997-03-11
EP0712537A4 (de) 1998-05-13
WO1995004377A1 (en) 1995-02-09
JPH10510677A (ja) 1998-10-13
DE69426233T2 (de) 2001-06-21
JP3845803B2 (ja) 2006-11-15
US5747728A (en) 1998-05-05

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