GB970980A - Improvements in or relating to methods of preparing crystalline compounds - Google Patents

Improvements in or relating to methods of preparing crystalline compounds

Info

Publication number
GB970980A
GB970980A GB30665/60A GB3066560A GB970980A GB 970980 A GB970980 A GB 970980A GB 30665/60 A GB30665/60 A GB 30665/60A GB 3066560 A GB3066560 A GB 3066560A GB 970980 A GB970980 A GB 970980A
Authority
GB
United Kingdom
Prior art keywords
bismuth
melting
mixture
compound
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30665/60A
Inventor
Allan Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB30665/60A priority Critical patent/GB970980A/en
Publication of GB970980A publication Critical patent/GB970980A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Abstract

A compound formed between at least two elements consisting of the metals and boron, silicon, germanium, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium, is prepared by heating an agitated mixture thereof in proportions corresponding to the desired compound, at a temperature below the melting-point of the compound and above the melting-point of at least one of the constituent elements so that there are present in the mixture at least one liquid phase and one solid phase. Compounds referred to are Bi2Te3, Sb2Te3, BiSbTe3, AgSbTe2, UPb, UPb3, USn3, UBi2, ThPb, ThPb3, ThSu3, ThIn3, ThHg3, ThBi2, ThZn2, ThCd2, ThGa2. The example refers to the production of bismuth telluride in which a coarsely granulated mixture of 40% bismuth and 60% tellurium is placed in a capsule of borosilicate glass, evacuated to a pressure of 10-5 mm. of mercury, sealed and placed in a mild steel bomb which is mounted on a vibrator. The temperature is raised to above the melting-point of bismuth (271 DEG C.), the vibrator energized and the temperature raised to 400 DEG C. and maintained at this temperature for six hours.ALSO:A compound formed between at least two elements consisting of the metals and boron, silicon, germanium, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium, is prepared by heating an agitated mixture thereof in proportions corresponding to the desired compound, at a temperature below the melting point of the compound and above the melting point of at least one of the constituent elements so that there are present in the mixture at least one liquid phase and one solid phase. Compounds referred to are: Bi2Te3, Sb2Te3, BiSbTe3, AgSbTe2, UPb, UPb3, USn3, UBi2, ThPb, ThPb3, ThSn3, ThIn3, ThHg3, ThBi2, ThZn2, ThCd2, ThGa2.
GB30665/60A 1960-09-06 1960-09-06 Improvements in or relating to methods of preparing crystalline compounds Expired GB970980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB30665/60A GB970980A (en) 1960-09-06 1960-09-06 Improvements in or relating to methods of preparing crystalline compounds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30665/60A GB970980A (en) 1960-09-06 1960-09-06 Improvements in or relating to methods of preparing crystalline compounds

Publications (1)

Publication Number Publication Date
GB970980A true GB970980A (en) 1964-09-23

Family

ID=10311212

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30665/60A Expired GB970980A (en) 1960-09-06 1960-09-06 Improvements in or relating to methods of preparing crystalline compounds

Country Status (1)

Country Link
GB (1) GB970980A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0712537A1 (en) * 1993-08-03 1996-05-22 California Institute Of Technology High performance thermoelectric materials and methods of preparation
EP1291927A2 (en) * 2001-08-31 2003-03-12 Basf Aktiengesellschaft Active photovoltaic materials and photovoltaic cells containing them
CN114249304A (en) * 2020-09-25 2022-03-29 中国科学院大连化学物理研究所 High-performance BiTe-based composite thermoelectric material and preparation method thereof
CN115285945A (en) * 2022-08-04 2022-11-04 安徽工程大学 Antimony-silver ditelluride nanocrystal and phosphine-free liquid phase synthesis method and application thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0712537A1 (en) * 1993-08-03 1996-05-22 California Institute Of Technology High performance thermoelectric materials and methods of preparation
EP0712537A4 (en) * 1993-08-03 1998-05-13 California Inst Of Techn High performance thermoelectric materials and methods of preparation
EP1291927A2 (en) * 2001-08-31 2003-03-12 Basf Aktiengesellschaft Active photovoltaic materials and photovoltaic cells containing them
EP1291927A3 (en) * 2001-08-31 2005-03-30 Basf Aktiengesellschaft Active photovoltaic materials and photovoltaic cells containing them
CN114249304A (en) * 2020-09-25 2022-03-29 中国科学院大连化学物理研究所 High-performance BiTe-based composite thermoelectric material and preparation method thereof
CN115285945A (en) * 2022-08-04 2022-11-04 安徽工程大学 Antimony-silver ditelluride nanocrystal and phosphine-free liquid phase synthesis method and application thereof

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