GB970980A - Improvements in or relating to methods of preparing crystalline compounds - Google Patents
Improvements in or relating to methods of preparing crystalline compoundsInfo
- Publication number
- GB970980A GB970980A GB30665/60A GB3066560A GB970980A GB 970980 A GB970980 A GB 970980A GB 30665/60 A GB30665/60 A GB 30665/60A GB 3066560 A GB3066560 A GB 3066560A GB 970980 A GB970980 A GB 970980A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bismuth
- melting
- mixture
- compound
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title abstract 9
- 229910052797 bismuth Inorganic materials 0.000 abstract 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 5
- 239000000203 mixture Substances 0.000 abstract 5
- 229910052714 tellurium Inorganic materials 0.000 abstract 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 3
- 229910002899 Bi2Te3 Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910017629 Sb2Te3 Inorganic materials 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 2
- 239000005864 Sulphur Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000007790 solid phase Substances 0.000 abstract 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 239000002775 capsule Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
A compound formed between at least two elements consisting of the metals and boron, silicon, germanium, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium, is prepared by heating an agitated mixture thereof in proportions corresponding to the desired compound, at a temperature below the melting-point of the compound and above the melting-point of at least one of the constituent elements so that there are present in the mixture at least one liquid phase and one solid phase. Compounds referred to are Bi2Te3, Sb2Te3, BiSbTe3, AgSbTe2, UPb, UPb3, USn3, UBi2, ThPb, ThPb3, ThSu3, ThIn3, ThHg3, ThBi2, ThZn2, ThCd2, ThGa2. The example refers to the production of bismuth telluride in which a coarsely granulated mixture of 40% bismuth and 60% tellurium is placed in a capsule of borosilicate glass, evacuated to a pressure of 10-5 mm. of mercury, sealed and placed in a mild steel bomb which is mounted on a vibrator. The temperature is raised to above the melting-point of bismuth (271 DEG C.), the vibrator energized and the temperature raised to 400 DEG C. and maintained at this temperature for six hours.ALSO:A compound formed between at least two elements consisting of the metals and boron, silicon, germanium, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium, is prepared by heating an agitated mixture thereof in proportions corresponding to the desired compound, at a temperature below the melting point of the compound and above the melting point of at least one of the constituent elements so that there are present in the mixture at least one liquid phase and one solid phase. Compounds referred to are: Bi2Te3, Sb2Te3, BiSbTe3, AgSbTe2, UPb, UPb3, USn3, UBi2, ThPb, ThPb3, ThSn3, ThIn3, ThHg3, ThBi2, ThZn2, ThCd2, ThGa2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB30665/60A GB970980A (en) | 1960-09-06 | 1960-09-06 | Improvements in or relating to methods of preparing crystalline compounds |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB30665/60A GB970980A (en) | 1960-09-06 | 1960-09-06 | Improvements in or relating to methods of preparing crystalline compounds |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB970980A true GB970980A (en) | 1964-09-23 |
Family
ID=10311212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30665/60A Expired GB970980A (en) | 1960-09-06 | 1960-09-06 | Improvements in or relating to methods of preparing crystalline compounds |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB970980A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0712537A1 (en) * | 1993-08-03 | 1996-05-22 | California Institute Of Technology | High performance thermoelectric materials and methods of preparation |
| EP1291927A2 (en) * | 2001-08-31 | 2003-03-12 | Basf Aktiengesellschaft | Active photovoltaic materials and photovoltaic cells containing them |
| CN114249304A (en) * | 2020-09-25 | 2022-03-29 | 中国科学院大连化学物理研究所 | High-performance BiTe-based composite thermoelectric material and preparation method thereof |
| CN115285945A (en) * | 2022-08-04 | 2022-11-04 | 安徽工程大学 | Antimony-silver ditelluride nanocrystal and phosphine-free liquid phase synthesis method and application thereof |
-
1960
- 1960-09-06 GB GB30665/60A patent/GB970980A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0712537A1 (en) * | 1993-08-03 | 1996-05-22 | California Institute Of Technology | High performance thermoelectric materials and methods of preparation |
| EP0712537A4 (en) * | 1993-08-03 | 1998-05-13 | California Inst Of Techn | High performance thermoelectric materials and methods of preparation |
| EP1291927A2 (en) * | 2001-08-31 | 2003-03-12 | Basf Aktiengesellschaft | Active photovoltaic materials and photovoltaic cells containing them |
| EP1291927A3 (en) * | 2001-08-31 | 2005-03-30 | Basf Aktiengesellschaft | Active photovoltaic materials and photovoltaic cells containing them |
| CN114249304A (en) * | 2020-09-25 | 2022-03-29 | 中国科学院大连化学物理研究所 | High-performance BiTe-based composite thermoelectric material and preparation method thereof |
| CN115285945A (en) * | 2022-08-04 | 2022-11-04 | 安徽工程大学 | Antimony-silver ditelluride nanocrystal and phosphine-free liquid phase synthesis method and application thereof |
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