GB1247214A - Improvements relating to the formation of single crystals - Google Patents

Improvements relating to the formation of single crystals

Info

Publication number
GB1247214A
GB1247214A GB0531/69A GB153169A GB1247214A GB 1247214 A GB1247214 A GB 1247214A GB 0531/69 A GB0531/69 A GB 0531/69A GB 153169 A GB153169 A GB 153169A GB 1247214 A GB1247214 A GB 1247214A
Authority
GB
United Kingdom
Prior art keywords
maintaining
crystal
temperature
jan
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB0531/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1247214A publication Critical patent/GB1247214A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Abstract

1,247,214. Forming single crystals. INTERNATIONAL BUSINESS MACHINES CORP. 10 Jan., 1969 [15 Jan., 1968], No. 1531/69. Heading B1S. [Also in Division H1] A single crystal is formed in a recess in a non-monocrystalline substrate by placing a body of a first material in the recess and melting it under an inert atmosphere, bring- ing an atmosphere containing a second material into contact with the body to cause absorption of the second material into the body while maintaining the body above the eutectic temperature of the two materials and also maintaining a sufficient temperature gradient across the body to cause nucleation at only a single point on the body, the higher tempera - ture of the gradient being at the exposed part of the body, and maintaining these conditions until the desired height of single crystal is obtained, the crystal being formed from the second material or a compound or mixture thereof with the first material. Nucleation may be initiated by maintaining the body at a first predetermined temperature until its melt becomes supersaturated with the second material with respect to some lower predetermined temperature, whereupon the body is lowered in temperature to this point. The first material may be gold, boron, gallium or indium and the second material silicon, germanium, phosphorus, arsenic or antimony obtained from the vapour of a hydride or halide. Specified substrates are quartz or a ceramic of metal oxide(s). If the crystals are of a semiconductor material they may each form part of a semiconductor device, e.g. each crystal may have a monolithic integrated circuit formed in it.
GB0531/69A 1968-01-15 1969-01-10 Improvements relating to the formation of single crystals Expired GB1247214A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69777068A 1968-01-15 1968-01-15

Publications (1)

Publication Number Publication Date
GB1247214A true GB1247214A (en) 1971-09-22

Family

ID=24802468

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0531/69A Expired GB1247214A (en) 1968-01-15 1969-01-10 Improvements relating to the formation of single crystals

Country Status (4)

Country Link
US (1) US3580732A (en)
DE (1) DE1901752C3 (en)
FR (1) FR1601583A (en)
GB (1) GB1247214A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362754A (en) * 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789276A (en) * 1968-07-15 1974-01-29 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
FR2407892A1 (en) * 1977-11-04 1979-06-01 Rhone Poulenc Ind SILICON MANUFACTURING PROCESS FOR PHOTOVOLTAIC CONVERSION
JPH0782996B2 (en) * 1986-03-28 1995-09-06 キヤノン株式会社 Crystal formation method
JPH08973B2 (en) * 1986-03-31 1996-01-10 キヤノン株式会社 Deposited film formation method
FR2658839B1 (en) * 1990-02-23 1997-06-20 Thomson Csf METHOD FOR CONTROLLED GROWTH OF ACICULAR CRYSTALS AND APPLICATION TO THE PRODUCTION OF POINTED MICROCATHODES.
JP2697474B2 (en) * 1992-04-30 1998-01-14 松下電器産業株式会社 Manufacturing method of microstructure
US5264722A (en) * 1992-06-12 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Nanochannel glass matrix used in making mesoscopic structures
US5479874A (en) * 1993-09-29 1996-01-02 General Electric Company CVD diamond production using preheating
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
AU7082596A (en) * 1995-07-28 1997-02-26 Forschungsverbund Berlin E.V. Method of producing crystalline layers
KR101008294B1 (en) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7776152B2 (en) * 2006-11-01 2010-08-17 Raytheon Company Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362754A (en) * 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals

Also Published As

Publication number Publication date
DE1901752A1 (en) 1969-09-04
DE1901752C3 (en) 1978-04-20
FR1601583A (en) 1970-08-31
DE1901752B2 (en) 1977-08-18
US3580732A (en) 1971-05-25

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