AU7082596A - Method of producing crystalline layers - Google Patents

Method of producing crystalline layers

Info

Publication number
AU7082596A
AU7082596A AU70825/96A AU7082596A AU7082596A AU 7082596 A AU7082596 A AU 7082596A AU 70825/96 A AU70825/96 A AU 70825/96A AU 7082596 A AU7082596 A AU 7082596A AU 7082596 A AU7082596 A AU 7082596A
Authority
AU
Australia
Prior art keywords
crystalline layers
producing crystalline
layers
producing
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU70825/96A
Inventor
Torsten Boeck
Andreas Braun
Klaus Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungsverbund Berlin FVB eV
Original Assignee
INST KRISTALLZUCHTUNG IM FORSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST KRISTALLZUCHTUNG IM FORSC filed Critical INST KRISTALLZUCHTUNG IM FORSC
Publication of AU7082596A publication Critical patent/AU7082596A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
AU70825/96A 1995-07-28 1996-07-26 Method of producing crystalline layers Abandoned AU7082596A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19529027 1995-07-28
DE19529027 1995-07-28
DE19529029 1995-07-28
DE19529029 1995-07-28
PCT/DE1996/001439 WO1997005304A1 (en) 1995-07-28 1996-07-26 Method of producing crystalline layers

Publications (1)

Publication Number Publication Date
AU7082596A true AU7082596A (en) 1997-02-26

Family

ID=26017508

Family Applications (1)

Application Number Title Priority Date Filing Date
AU70825/96A Abandoned AU7082596A (en) 1995-07-28 1996-07-26 Method of producing crystalline layers

Country Status (4)

Country Link
EP (1) EP0843748B1 (en)
AU (1) AU7082596A (en)
DE (2) DE19631551A1 (en)
WO (1) WO1997005304A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362754A (en) * 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals
DE102010044014A1 (en) * 2010-11-16 2012-05-16 Forschungsverbund Berlin E.V. Crystallization process for forming semiconductor material-containing crystalline layer for absorber layer of silicon solar cell, involves coating amorphous coating on substrate, depositing metallic solvent on amorphous layer and heating

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3580732A (en) * 1968-01-15 1971-05-25 Ibm Method of growing single crystals
US4534820A (en) * 1981-10-19 1985-08-13 Nippon Telegraph & Telephone Public Corporation Method for manufacturing crystalline film
JPS5969495A (en) * 1982-10-13 1984-04-19 Nippon Telegr & Teleph Corp <Ntt> Formation of silicon-single crystal film

Also Published As

Publication number Publication date
EP0843748A1 (en) 1998-05-27
WO1997005304A1 (en) 1997-02-13
DE19631551A1 (en) 1997-04-03
EP0843748B1 (en) 2001-06-27
DE59607177D1 (en) 2001-08-02

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