GB1284419A - Method for preparing single crystal pseudobinary alloys - Google Patents
Method for preparing single crystal pseudobinary alloysInfo
- Publication number
- GB1284419A GB1284419A GB50405/69A GB5040569A GB1284419A GB 1284419 A GB1284419 A GB 1284419A GB 50405/69 A GB50405/69 A GB 50405/69A GB 5040569 A GB5040569 A GB 5040569A GB 1284419 A GB1284419 A GB 1284419A
- Authority
- GB
- United Kingdom
- Prior art keywords
- group
- alloy
- ingot
- telluride
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/06—Recrystallisation under a temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1284419 Progressive crystallization TEXAS INSTRUMENTS Inc 14 Oct 1969 [31 Dec 1968] 50405/69 Heading BIS [Also in Divisions Cl and C7] Large homogeneous single crystals of a pseudobinary alloy are produced from a highly polycrystalline ingot by slowly passing a temperature gradient from one end of the ingot to the other until all of the ingot is at approximately the same temperature just below the solidus temperature of the alloy. The highly polycrystalline ingot may be prepared by rapidly freezing a liquid mixture of the components of the alloy. The alloy may comprise at least two compounds, each compound being formed by an element from Group II and an element from Group VI preferably mercury telluride and cadmium telluride; an element from Group III and an element from Group V preferably indium arsenide and indium antimonide; or an element from Group IV and an element from Group VI preferably lead telluride and tin telluride. The preferred alloy is Hg 0À79 Cd 0À21 Te 1-1À02 .
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78817168A | 1968-12-31 | 1968-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1284419A true GB1284419A (en) | 1972-08-09 |
Family
ID=25143663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB50405/69A Expired GB1284419A (en) | 1968-12-31 | 1969-10-14 | Method for preparing single crystal pseudobinary alloys |
Country Status (6)
Country | Link |
---|---|
US (1) | US3622399A (en) |
JP (1) | JPS534074B1 (en) |
DE (1) | DE1950874A1 (en) |
FR (1) | FR2027409A1 (en) |
GB (1) | GB1284419A (en) |
NL (1) | NL6916157A (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725135A (en) * | 1968-10-09 | 1973-04-03 | Honeywell Inc | PROCESS FOR PREPARING EPITAXIAL LAYERS OF Hg{11 {118 {11 Cd{11 Te |
US3925147A (en) * | 1971-08-30 | 1975-12-09 | Hughes Aircraft Co | Preparation of monocrystalline lead tin telluride |
US4076572A (en) * | 1973-07-05 | 1978-02-28 | Hughes Aircraft Company | Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system |
US3849205A (en) * | 1973-08-27 | 1974-11-19 | Texas Instruments Inc | Enhancement of solid state recrystallization by induced nucleation |
US3941648A (en) * | 1975-01-31 | 1976-03-02 | Allied Chemical Corporation | Crystal growth on Hg3 TeO6 |
US3963540A (en) * | 1975-02-28 | 1976-06-15 | Honeywell Inc. | Heat treatment of mercury cadmium telluride |
US4249987A (en) * | 1976-04-22 | 1981-02-10 | Hughes Aircraft Company | Method of growing large Pb1-x -Snx -Te single crystals where 0<X<1 |
GB2051607B (en) * | 1979-07-05 | 1983-06-29 | Philips Electronic Associated | Method of making monocrystalline ternary semiconductor material |
US4344476A (en) * | 1979-08-30 | 1982-08-17 | Santa Barbara Research Center | Supercool method for producing single crystal mercury cadmium telluride |
FR2502190A1 (en) * | 1981-03-18 | 1982-09-24 | Telecommunications Sa | PROCESS FOR THE PREPARATION OF HG1-X CDX TE CRYSTALS |
DE3322789C2 (en) * | 1983-06-24 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Method for producing single crystal Hg 1 - x Cd x Te |
US4613495A (en) * | 1984-07-20 | 1986-09-23 | Hughes Aircraft Company | Growth of single crystal Cadmium-Indium-Telluride |
US5047112A (en) * | 1990-08-14 | 1991-09-10 | The United States Of America As Represented By The United States Department Of Energy | Method for preparing homogeneous single crystal ternary III-V alloys |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1217926B (en) * | 1963-08-17 | 1966-06-02 | Siemens Ag | Method for avoiding streaks in metal or semiconductor crystals |
US3351502A (en) * | 1964-10-19 | 1967-11-07 | Massachusetts Inst Technology | Method of producing interface-alloy epitaxial heterojunctions |
US3352722A (en) * | 1965-07-27 | 1967-11-14 | Frederick E Wang | Method for growing single crystals |
US3496118A (en) * | 1966-04-19 | 1970-02-17 | Bell & Howell Co | Iiib-vb compounds |
FR1504497A (en) * | 1966-05-27 | 1967-12-08 | Centre Nat Rech Scient | Process for the treatment of semiconductor alloys in mercury and cadmium tellurides |
US3480554A (en) * | 1966-12-05 | 1969-11-25 | Gen Electric | Single phase lead telluride |
US3468363A (en) * | 1967-10-10 | 1969-09-23 | Texas Instruments Inc | Method of producing homogeneous ingots of mercury cadmium telluride |
-
1968
- 1968-12-31 US US788171A patent/US3622399A/en not_active Expired - Lifetime
-
1969
- 1969-10-09 DE DE19691950874 patent/DE1950874A1/en active Pending
- 1969-10-14 GB GB50405/69A patent/GB1284419A/en not_active Expired
- 1969-10-27 NL NL6916157A patent/NL6916157A/xx unknown
- 1969-11-13 FR FR6938931A patent/FR2027409A1/fr not_active Withdrawn
- 1969-12-01 JP JP9578469A patent/JPS534074B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3622399A (en) | 1971-11-23 |
DE1950874A1 (en) | 1970-07-16 |
FR2027409A1 (en) | 1970-09-25 |
JPS534074B1 (en) | 1978-02-14 |
NL6916157A (en) | 1970-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |