GB1434437A - Method and device for the preparation of doped cadmium telluride - Google Patents

Method and device for the preparation of doped cadmium telluride

Info

Publication number
GB1434437A
GB1434437A GB1751174A GB1751174A GB1434437A GB 1434437 A GB1434437 A GB 1434437A GB 1751174 A GB1751174 A GB 1751174A GB 1751174 A GB1751174 A GB 1751174A GB 1434437 A GB1434437 A GB 1434437A
Authority
GB
United Kingdom
Prior art keywords
cadmium telluride
ingot
preparation
imperfect
recrystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1751174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB1434437A publication Critical patent/GB1434437A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1434437 Doped cadmium telluride COMMISSARIAT A L'ENERGIE ATOMIQUE 22 April 1974 [11 May 1973] 17511/74 Heading C1A [Also in Divisions C4-C5 and B1] A method of preparation of a single crystal of cadmium telluride without impurities other than the doping agents and having a low concentration of dislocations, twinning and other crystallographic defects comprises three crystallization operations, of which at least the third is performed in the presence of doping agents introduced in controlled amounts, which are performed successively as follows: in a first operation, an imperfect ingot of cadmium telluride is synthesized from cadmium and tellurium in the pure state and in stoichiometric proportions; in a second operation, said imperfect ingot is melted and recrystallized at a temperature close to the melting point of cadmium telluride, so producing a polycrystalline ingot of higher purity but still containing a high concentration of defects; and in a third operation, the crystal is dissolved in and recrystallized from molten tellurium containing dissolved therein a dopant at a temperature between 450‹ and 950‹ C.
GB1751174A 1973-05-11 1974-04-22 Method and device for the preparation of doped cadmium telluride Expired GB1434437A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (en) 1973-05-11 1973-05-11

Publications (1)

Publication Number Publication Date
GB1434437A true GB1434437A (en) 1976-05-05

Family

ID=9119239

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1751174A Expired GB1434437A (en) 1973-05-11 1974-04-22 Method and device for the preparation of doped cadmium telluride

Country Status (6)

Country Link
BE (1) BE813808A (en)
DE (1) DE2422251C2 (en)
FR (1) FR2228540B1 (en)
GB (1) GB1434437A (en)
IT (1) IT1014137B (en)
NL (1) NL179927C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4765863A (en) * 1986-01-21 1988-08-23 S.A.T. (Societe Anonyme De Telecommunications) Method of preparing a crystalline ingot of Hg1-x.sbsb.o Cdx.sbsb.o Te
CN109594124A (en) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 The heating device and grower of crystal growth

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
FR2629476B1 (en) * 1988-04-01 1990-11-30 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT FROM HGCDTE
FR2703696B1 (en) * 1993-04-08 1995-06-09 Eurorad 2 6 Sarl PROCESS FOR OBTAINING A DOPED CRYSTALLINE MATERIAL BASED ON TELLURE AND CADMIUM AND A DETECTOR COMPRISING SUCH A MATERIAL.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129789A (en) * 1966-03-26 1968-10-09 Matsushita Electronics Corp Process for producing cadmium telluride crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4765863A (en) * 1986-01-21 1988-08-23 S.A.T. (Societe Anonyme De Telecommunications) Method of preparing a crystalline ingot of Hg1-x.sbsb.o Cdx.sbsb.o Te
CN109594124A (en) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 The heating device and grower of crystal growth

Also Published As

Publication number Publication date
NL179927C (en) 1986-12-01
FR2228540A1 (en) 1974-12-06
DE2422251A1 (en) 1974-11-28
NL179927B (en) 1986-07-01
NL7406301A (en) 1974-11-13
IT1014137B (en) 1977-04-20
FR2228540B1 (en) 1978-02-10
BE813808A (en) 1974-08-16
DE2422251C2 (en) 1985-09-19

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930422