IT1014137B - PROCEDURE AND DEVICE FOR THE PREPARATION OF CADMIODROGATE TELLERIDE - Google Patents

PROCEDURE AND DEVICE FOR THE PREPARATION OF CADMIODROGATE TELLERIDE

Info

Publication number
IT1014137B
IT1014137B IT68444/74A IT6844474A IT1014137B IT 1014137 B IT1014137 B IT 1014137B IT 68444/74 A IT68444/74 A IT 68444/74A IT 6844474 A IT6844474 A IT 6844474A IT 1014137 B IT1014137 B IT 1014137B
Authority
IT
Italy
Prior art keywords
cadmiodrogate
telleride
procedure
preparation
cadmiodrogate telleride
Prior art date
Application number
IT68444/74A
Other languages
Italian (it)
Inventor
A Cornet
P Siffert
C Potard
B Schaub
J Gallet
J Koebel
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of IT1014137B publication Critical patent/IT1014137B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
IT68444/74A 1973-05-11 1974-05-08 PROCEDURE AND DEVICE FOR THE PREPARATION OF CADMIODROGATE TELLERIDE IT1014137B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (en) 1973-05-11 1973-05-11

Publications (1)

Publication Number Publication Date
IT1014137B true IT1014137B (en) 1977-04-20

Family

ID=9119239

Family Applications (1)

Application Number Title Priority Date Filing Date
IT68444/74A IT1014137B (en) 1973-05-11 1974-05-08 PROCEDURE AND DEVICE FOR THE PREPARATION OF CADMIODROGATE TELLERIDE

Country Status (6)

Country Link
BE (1) BE813808A (en)
DE (1) DE2422251C2 (en)
FR (1) FR2228540B1 (en)
GB (1) GB1434437A (en)
IT (1) IT1014137B (en)
NL (1) NL179927C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593196B1 (en) * 1986-01-21 1988-04-15 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT OF HG1-XO CDXO TE
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
FR2629476B1 (en) * 1988-04-01 1990-11-30 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT FROM HGCDTE
FR2703696B1 (en) * 1993-04-08 1995-06-09 Eurorad 2 6 Sarl PROCESS FOR OBTAINING A DOPED CRYSTALLINE MATERIAL BASED ON TELLURE AND CADMIUM AND A DETECTOR COMPRISING SUCH A MATERIAL.
CN109594124A (en) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 The heating device and grower of crystal growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129789A (en) * 1966-03-26 1968-10-09 Matsushita Electronics Corp Process for producing cadmium telluride crystal

Also Published As

Publication number Publication date
FR2228540B1 (en) 1978-02-10
NL179927B (en) 1986-07-01
DE2422251C2 (en) 1985-09-19
BE813808A (en) 1974-08-16
FR2228540A1 (en) 1974-12-06
GB1434437A (en) 1976-05-05
DE2422251A1 (en) 1974-11-28
NL7406301A (en) 1974-11-13
NL179927C (en) 1986-12-01

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