FR2228540A1 - - Google Patents

Info

Publication number
FR2228540A1
FR2228540A1 FR7317261A FR7317261A FR2228540A1 FR 2228540 A1 FR2228540 A1 FR 2228540A1 FR 7317261 A FR7317261 A FR 7317261A FR 7317261 A FR7317261 A FR 7317261A FR 2228540 A1 FR2228540 A1 FR 2228540A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7317261A
Other languages
French (fr)
Other versions
FR2228540B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7317261A priority Critical patent/FR2228540B1/fr
Priority to BE143276A priority patent/BE813808A/en
Priority to GB1751174A priority patent/GB1434437A/en
Priority to DE2422251A priority patent/DE2422251C2/en
Priority to IT68444/74A priority patent/IT1014137B/en
Priority to NLAANVRAGE7406301,A priority patent/NL179927C/en
Publication of FR2228540A1 publication Critical patent/FR2228540A1/fr
Application granted granted Critical
Publication of FR2228540B1 publication Critical patent/FR2228540B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
FR7317261A 1973-05-11 1973-05-11 Expired FR2228540B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (en) 1973-05-11 1973-05-11
BE143276A BE813808A (en) 1973-05-11 1974-04-17 METHOD AND DEVICE FOR THE PREPARATION OF CADMIUM DOPE TELLURIDE
GB1751174A GB1434437A (en) 1973-05-11 1974-04-22 Method and device for the preparation of doped cadmium telluride
DE2422251A DE2422251C2 (en) 1973-05-11 1974-05-08 Process for the production of a doped cadmium telluride single crystal
IT68444/74A IT1014137B (en) 1973-05-11 1974-05-08 PROCEDURE AND DEVICE FOR THE PREPARATION OF CADMIODROGATE TELLERIDE
NLAANVRAGE7406301,A NL179927C (en) 1973-05-11 1974-05-10 METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (en) 1973-05-11 1973-05-11

Publications (2)

Publication Number Publication Date
FR2228540A1 true FR2228540A1 (en) 1974-12-06
FR2228540B1 FR2228540B1 (en) 1978-02-10

Family

ID=9119239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317261A Expired FR2228540B1 (en) 1973-05-11 1973-05-11

Country Status (6)

Country Link
BE (1) BE813808A (en)
DE (1) DE2422251C2 (en)
FR (1) FR2228540B1 (en)
GB (1) GB1434437A (en)
IT (1) IT1014137B (en)
NL (1) NL179927C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261647A2 (en) * 1986-09-26 1988-03-30 Nippon Mining Company Limited High resistivity CdTe crystal and process for producing the same
EP0335794A1 (en) * 1988-04-01 1989-10-04 SAT Société Anonyme de Télécommunications Process for preparing a HgCdTe crystal ingot
FR2703696A1 (en) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Process for obtaining a doped crystalline material based on tellurium and cadmium and detector incorporating such a material

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593196B1 (en) * 1986-01-21 1988-04-15 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT OF HG1-XO CDXO TE
CN109594124A (en) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 The heating device and grower of crystal growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129789A (en) * 1966-03-26 1968-10-09 Matsushita Electronics Corp Process for producing cadmium telluride crystal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261647A2 (en) * 1986-09-26 1988-03-30 Nippon Mining Company Limited High resistivity CdTe crystal and process for producing the same
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
EP0335794A1 (en) * 1988-04-01 1989-10-04 SAT Société Anonyme de Télécommunications Process for preparing a HgCdTe crystal ingot
FR2629476A1 (en) * 1988-04-01 1989-10-06 Telecommunications Sa PROCESS FOR THE PREPARATION OF A HGCDTE CRYSTALLINE INGOT
FR2703696A1 (en) * 1993-04-08 1994-10-14 Eurorad 2 6 Sarl Process for obtaining a doped crystalline material based on tellurium and cadmium and detector incorporating such a material

Also Published As

Publication number Publication date
DE2422251C2 (en) 1985-09-19
BE813808A (en) 1974-08-16
FR2228540B1 (en) 1978-02-10
NL179927B (en) 1986-07-01
NL7406301A (en) 1974-11-13
DE2422251A1 (en) 1974-11-28
IT1014137B (en) 1977-04-20
GB1434437A (en) 1976-05-05
NL179927C (en) 1986-12-01

Similar Documents

Publication Publication Date Title
AR201758A1 (en)
AU476761B2 (en)
AU465372B2 (en)
AR201235Q (en)
AR201231Q (en)
AU474593B2 (en)
AU474511B2 (en)
AU474838B2 (en)
AU465453B2 (en)
AU465434B2 (en)
AU471343B2 (en)
AU450229B2 (en)
AU476714B2 (en)
AR201229Q (en)
AU466283B2 (en)
AU476696B2 (en)
AU472848B2 (en)
AR199451A1 (en)
AU477823B2 (en)
AR197627A1 (en)
AU471461B2 (en)
AR200256A1 (en)
AU461342B2 (en)
AR210729A1 (en)
AR195311A1 (en)

Legal Events

Date Code Title Description
CL Concession to grant licences