NL179927B - METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE - Google Patents

METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE

Info

Publication number
NL179927B
NL179927B NLAANVRAGE7406301,A NL7406301A NL179927B NL 179927 B NL179927 B NL 179927B NL 7406301 A NL7406301 A NL 7406301A NL 179927 B NL179927 B NL 179927B
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
single crystal
cadmium telluride
doped cadmium
Prior art date
Application number
NLAANVRAGE7406301,A
Other languages
Dutch (nl)
Other versions
NL7406301A (en
NL179927C (en
Inventor
Alain Cornet
Jean Gallet
Claude Potard
Bernard Schaub
Jean-Marie Koebel
Paul Siffert
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of NL7406301A publication Critical patent/NL7406301A/xx
Publication of NL179927B publication Critical patent/NL179927B/en
Application granted granted Critical
Publication of NL179927C publication Critical patent/NL179927C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
NLAANVRAGE7406301,A 1973-05-11 1974-05-10 METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE NL179927C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317261A FR2228540B1 (en) 1973-05-11 1973-05-11

Publications (3)

Publication Number Publication Date
NL7406301A NL7406301A (en) 1974-11-13
NL179927B true NL179927B (en) 1986-07-01
NL179927C NL179927C (en) 1986-12-01

Family

ID=9119239

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7406301,A NL179927C (en) 1973-05-11 1974-05-10 METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE

Country Status (6)

Country Link
BE (1) BE813808A (en)
DE (1) DE2422251C2 (en)
FR (1) FR2228540B1 (en)
GB (1) GB1434437A (en)
IT (1) IT1014137B (en)
NL (1) NL179927C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593196B1 (en) * 1986-01-21 1988-04-15 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT OF HG1-XO CDXO TE
EP0261647A3 (en) * 1986-09-26 1989-08-16 Nippon Mining Company Limited High resistivity cdte crystal and process for producing the same
FR2629476B1 (en) * 1988-04-01 1990-11-30 Telecommunications Sa PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT FROM HGCDTE
FR2703696B1 (en) * 1993-04-08 1995-06-09 Eurorad 2 6 Sarl PROCESS FOR OBTAINING A DOPED CRYSTALLINE MATERIAL BASED ON TELLURE AND CADMIUM AND A DETECTOR COMPRISING SUCH A MATERIAL.
CN109594124A (en) * 2018-12-29 2019-04-09 珠海鼎泰芯源晶体有限公司 The heating device and grower of crystal growth

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1129789A (en) * 1966-03-26 1968-10-09 Matsushita Electronics Corp Process for producing cadmium telluride crystal

Also Published As

Publication number Publication date
DE2422251C2 (en) 1985-09-19
BE813808A (en) 1974-08-16
FR2228540B1 (en) 1978-02-10
NL7406301A (en) 1974-11-13
DE2422251A1 (en) 1974-11-28
IT1014137B (en) 1977-04-20
GB1434437A (en) 1976-05-05
FR2228540A1 (en) 1974-12-06
NL179927C (en) 1986-12-01

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee