NL7501990A - SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS. - Google Patents

SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.

Info

Publication number
NL7501990A
NL7501990A NL7501990A NL7501990A NL7501990A NL 7501990 A NL7501990 A NL 7501990A NL 7501990 A NL7501990 A NL 7501990A NL 7501990 A NL7501990 A NL 7501990A NL 7501990 A NL7501990 A NL 7501990A
Authority
NL
Netherlands
Prior art keywords
semi
manufacturing
conductor device
conductor
Prior art date
Application number
NL7501990A
Other languages
Dutch (nl)
Other versions
NL165891C (en
NL165891B (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7501990A publication Critical patent/NL7501990A/en
Publication of NL165891B publication Critical patent/NL165891B/en
Application granted granted Critical
Publication of NL165891C publication Critical patent/NL165891C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7501990.A 1974-03-04 1975-02-19 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE. NL165891C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (en) 1974-03-04 1974-03-04

Publications (3)

Publication Number Publication Date
NL7501990A true NL7501990A (en) 1975-09-08
NL165891B NL165891B (en) 1980-12-15
NL165891C NL165891C (en) 1981-05-15

Family

ID=12133281

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7501990.A NL165891C (en) 1974-03-04 1975-02-19 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE.

Country Status (5)

Country Link
JP (1) JPS5248066B2 (en)
DE (1) DE2507357C2 (en)
FR (1) FR2263624B1 (en)
GB (1) GB1502953A (en)
NL (1) NL165891C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576273B2 (en) * 1975-03-08 1982-02-04
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
NL7609607A (en) * 1976-08-30 1978-03-02 Philips Nv PROCESS FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED BY THE PROCESS.
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
CA1147045A (en) * 1978-09-20 1983-05-24 Naoki Chinone Semiconductor laser device
FR2502847A1 (en) * 1981-03-25 1982-10-01 Western Electric Co SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT PIPE STRUCTURE
JPS60154689A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Light emitting element and lighr communication equipment using the same
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
WO2004073125A1 (en) * 2003-02-12 2004-08-26 Sharp Kabushiki Kaisha Semiconductor laser device, optical head, and information recorder

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
DE2137892C3 (en) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor laser
DE2165539C3 (en) * 1971-12-30 1979-12-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Double hetero diode laser on semiconductor basis

Also Published As

Publication number Publication date
JPS50119584A (en) 1975-09-19
NL165891C (en) 1981-05-15
NL165891B (en) 1980-12-15
FR2263624A1 (en) 1975-10-03
DE2507357C2 (en) 1983-08-11
GB1502953A (en) 1978-03-08
JPS5248066B2 (en) 1977-12-07
FR2263624B1 (en) 1982-12-17
DE2507357A1 (en) 1975-09-11

Similar Documents

Publication Publication Date Title
NL7510336A (en) SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
NL7501529A (en) FIELD EFFECT SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
NL7513642A (en) TIRE CONNECTION AND METHOD AND DEVICE FOR FORMING THIS.
NL7501244A (en) SEMICONDUCTORS AND METHOD FOR THEREOF.
NL7513483A (en) INTEGRATED SEMI-CONDUCTOR DEVICE.
NL7510328A (en) FIELD EMISSION DEVICE AND PROCEDURE FOR MANUFACTURING THIS.
NL7707919A (en) SEMICONDUCTOR AND THE METHOD FOR MANUFACTURE THIS.
NL7701119A (en) SEMI-CONDUCTOR DEVICE AND METHOD OF MANUFACTURING THIS.
NL7612883A (en) SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
NL7506211A (en) METHOD AND DEVICE FOR CAPITONNESS.
NL188668C (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
NL7508657A (en) PHOTOCELL AND METHOD FOR MANUFACTURING THIS.
NL7312547A (en) SEMI-CONDUCTOR DEVICE, PROCESS FOR MANUFACTURE THEREOF AND CONNECTION CONTAINING THE DEVICE.
NL7409116A (en) COOLING METHOD AND A DEVICE FOR APPLICATION THEREOF.
NL161301C (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF.
NL7508526A (en) MANUFACTURING METHOD FOR ELECTRO-ACOUSTIC TRANSFERRATORS.
NL7507891A (en) SEMICONDUCTOR CONSTRUCTION ELEMENT WITH A DIELECTRIC CARRIER AND A METHOD FOR MANUFACTURING THIS.
NL7509464A (en) METHOD FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE.
NL7501990A (en) SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.
NL7408110A (en) SEMICONDUCTOR DEVICE WITH COMPLEMENTARY TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURE THEREOF.
NL7513742A (en) METHOD AND DEVICE FOR FAKSIMILE CODING.
NL7508965A (en) INSULATION SHADING HOSE, AND THE METHOD AND DEVICE FOR MANUFACTURING THIS.
NL7709870A (en) COMPLEMENTARY INSULATED FIELD EFFECT SEMICONDUCTOR DEVICE WITH GATE OPERATION AND METHOD FOR MANUFACTURING THIS.
SE7509023L (en) SEMICONDUCTOR DEVICE.
SE7506852L (en) POSITION METHOD DEVICE.

Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent