NL165891C - METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE. - Google Patents

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE.

Info

Publication number
NL165891C
NL165891C NL7501990.A NL7501990A NL165891C NL 165891 C NL165891 C NL 165891C NL 7501990 A NL7501990 A NL 7501990A NL 165891 C NL165891 C NL 165891C
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NL7501990.A
Other languages
Dutch (nl)
Other versions
NL7501990A (en
NL165891B (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7501990A publication Critical patent/NL7501990A/en
Publication of NL165891B publication Critical patent/NL165891B/en
Application granted granted Critical
Publication of NL165891C publication Critical patent/NL165891C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
NL7501990.A 1974-03-04 1975-02-19 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE. NL165891C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (en) 1974-03-04 1974-03-04

Publications (3)

Publication Number Publication Date
NL7501990A NL7501990A (en) 1975-09-08
NL165891B NL165891B (en) 1980-12-15
NL165891C true NL165891C (en) 1981-05-15

Family

ID=12133281

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7501990.A NL165891C (en) 1974-03-04 1975-02-19 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE.

Country Status (5)

Country Link
JP (1) JPS5248066B2 (en)
DE (1) DE2507357C2 (en)
FR (1) FR2263624B1 (en)
GB (1) GB1502953A (en)
NL (1) NL165891C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576273B2 (en) * 1975-03-08 1982-02-04
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
NL7609607A (en) * 1976-08-30 1978-03-02 Philips Nv PROCESS FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED BY THE PROCESS.
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
CA1147045A (en) * 1978-09-20 1983-05-24 Naoki Chinone Semiconductor laser device
FR2502847A1 (en) * 1981-03-25 1982-10-01 Western Electric Co SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT PIPE STRUCTURE
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
JPS60154689A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Light emitting element and lighr communication equipment using the same
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
WO2004073125A1 (en) * 2003-02-12 2004-08-26 Sharp Kabushiki Kaisha Semiconductor laser device, optical head, and information recorder

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
DE2137892C3 (en) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor laser
DE2165539C3 (en) * 1971-12-30 1979-12-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Double hetero diode laser on semiconductor basis

Also Published As

Publication number Publication date
GB1502953A (en) 1978-03-08
NL7501990A (en) 1975-09-08
DE2507357C2 (en) 1983-08-11
NL165891B (en) 1980-12-15
JPS50119584A (en) 1975-09-19
FR2263624A1 (en) 1975-10-03
JPS5248066B2 (en) 1977-12-07
DE2507357A1 (en) 1975-09-11
FR2263624B1 (en) 1982-12-17

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent