FR2263624A1 - - Google Patents

Info

Publication number
FR2263624A1
FR2263624A1 FR7505097A FR7505097A FR2263624A1 FR 2263624 A1 FR2263624 A1 FR 2263624A1 FR 7505097 A FR7505097 A FR 7505097A FR 7505097 A FR7505097 A FR 7505097A FR 2263624 A1 FR2263624 A1 FR 2263624A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7505097A
Other languages
French (fr)
Other versions
FR2263624B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2263624A1 publication Critical patent/FR2263624A1/fr
Application granted granted Critical
Publication of FR2263624B1 publication Critical patent/FR2263624B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
FR7505097A 1974-03-04 1975-02-19 Expired FR2263624B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2426174A JPS5248066B2 (en) 1974-03-04 1974-03-04

Publications (2)

Publication Number Publication Date
FR2263624A1 true FR2263624A1 (en) 1975-10-03
FR2263624B1 FR2263624B1 (en) 1982-12-17

Family

ID=12133281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7505097A Expired FR2263624B1 (en) 1974-03-04 1975-02-19

Country Status (5)

Country Link
JP (1) JPS5248066B2 (en)
DE (1) DE2507357C2 (en)
FR (1) FR2263624B1 (en)
GB (1) GB1502953A (en)
NL (1) NL165891C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2363201A1 (en) * 1976-08-30 1978-03-24 Philips Nv EPITAXICAL PROCESS FOR THE REALIZATION OF A SEMICONDUCTOR OR GA AL AS DEVICE AND DEVICE THUS OBTAINED
FR2437083A1 (en) * 1978-09-20 1980-04-18 Hitachi Ltd SEMICONDUCTOR LASER DEVICE
FR2502847A1 (en) * 1981-03-25 1982-10-01 Western Electric Co SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT PIPE STRUCTURE

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576273B2 (en) * 1975-03-08 1982-02-04
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JPS60154689A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Light emitting element and lighr communication equipment using the same
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
WO2004073125A1 (en) * 2003-02-12 2004-08-26 Sharp Kabushiki Kaisha Semiconductor laser device, optical head, and information recorder

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
DE2137892C3 (en) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor laser
DE2165539C3 (en) * 1971-12-30 1979-12-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Double hetero diode laser on semiconductor basis

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2363201A1 (en) * 1976-08-30 1978-03-24 Philips Nv EPITAXICAL PROCESS FOR THE REALIZATION OF A SEMICONDUCTOR OR GA AL AS DEVICE AND DEVICE THUS OBTAINED
FR2437083A1 (en) * 1978-09-20 1980-04-18 Hitachi Ltd SEMICONDUCTOR LASER DEVICE
FR2502847A1 (en) * 1981-03-25 1982-10-01 Western Electric Co SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT PIPE STRUCTURE

Also Published As

Publication number Publication date
NL165891B (en) 1980-12-15
JPS50119584A (en) 1975-09-19
DE2507357A1 (en) 1975-09-11
GB1502953A (en) 1978-03-08
NL165891C (en) 1981-05-15
JPS5248066B2 (en) 1977-12-07
NL7501990A (en) 1975-09-08
FR2263624B1 (en) 1982-12-17
DE2507357C2 (en) 1983-08-11

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