NL179927C - METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE - Google Patents
METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICEInfo
- Publication number
- NL179927C NL179927C NLAANVRAGE7406301,A NL7406301A NL179927C NL 179927 C NL179927 C NL 179927C NL 7406301 A NL7406301 A NL 7406301A NL 179927 C NL179927 C NL 179927C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor device
- single crystal
- cadmium telluride
- doped cadmium
- Prior art date
Links
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7317261A FR2228540B1 (en) | 1973-05-11 | 1973-05-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7406301A NL7406301A (en) | 1974-11-13 |
NL179927B NL179927B (en) | 1986-07-01 |
NL179927C true NL179927C (en) | 1986-12-01 |
Family
ID=9119239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7406301,A NL179927C (en) | 1973-05-11 | 1974-05-10 | METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF Doped CADMIUM TELLURIDE AND SEMICONDUCTOR DEVICE |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE813808A (en) |
DE (1) | DE2422251C2 (en) |
FR (1) | FR2228540B1 (en) |
GB (1) | GB1434437A (en) |
IT (1) | IT1014137B (en) |
NL (1) | NL179927C (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593196B1 (en) * | 1986-01-21 | 1988-04-15 | Telecommunications Sa | PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT OF HG1-XO CDXO TE |
EP0261647A3 (en) * | 1986-09-26 | 1989-08-16 | Nippon Mining Company Limited | High resistivity cdte crystal and process for producing the same |
FR2629476B1 (en) * | 1988-04-01 | 1990-11-30 | Telecommunications Sa | PROCESS FOR THE PREPARATION OF A CRYSTAL INGOT FROM HGCDTE |
FR2703696B1 (en) * | 1993-04-08 | 1995-06-09 | Eurorad 2 6 Sarl | PROCESS FOR OBTAINING A DOPED CRYSTALLINE MATERIAL BASED ON TELLURE AND CADMIUM AND A DETECTOR COMPRISING SUCH A MATERIAL. |
CN109594124A (en) * | 2018-12-29 | 2019-04-09 | 珠海鼎泰芯源晶体有限公司 | The heating device and grower of crystal growth |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1129789A (en) * | 1966-03-26 | 1968-10-09 | Matsushita Electronics Corp | Process for producing cadmium telluride crystal |
-
1973
- 1973-05-11 FR FR7317261A patent/FR2228540B1/fr not_active Expired
-
1974
- 1974-04-17 BE BE143276A patent/BE813808A/en not_active IP Right Cessation
- 1974-04-22 GB GB1751174A patent/GB1434437A/en not_active Expired
- 1974-05-08 DE DE2422251A patent/DE2422251C2/en not_active Expired
- 1974-05-08 IT IT68444/74A patent/IT1014137B/en active
- 1974-05-10 NL NLAANVRAGE7406301,A patent/NL179927C/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2422251C2 (en) | 1985-09-19 |
BE813808A (en) | 1974-08-16 |
FR2228540B1 (en) | 1978-02-10 |
NL179927B (en) | 1986-07-01 |
NL7406301A (en) | 1974-11-13 |
DE2422251A1 (en) | 1974-11-28 |
IT1014137B (en) | 1977-04-20 |
GB1434437A (en) | 1976-05-05 |
FR2228540A1 (en) | 1974-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |