NL187508C - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES - Google Patents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICESInfo
- Publication number
- NL187508C NL187508C NLAANVRAGE7702755,A NL7702755A NL187508C NL 187508 C NL187508 C NL 187508C NL 7702755 A NL7702755 A NL 7702755A NL 187508 C NL187508 C NL 187508C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/667,791 US4056408A (en) | 1976-03-17 | 1976-03-17 | Reducing the switching time of semiconductor devices by nuclear irradiation |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7702755A NL7702755A (en) | 1977-09-20 |
NL187508B NL187508B (en) | 1991-05-16 |
NL187508C true NL187508C (en) | 1991-10-16 |
Family
ID=24679658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7702755,A NL187508C (en) | 1976-03-17 | 1977-03-15 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES |
Country Status (12)
Country | Link |
---|---|
US (1) | US4056408A (en) |
JP (1) | JPS52113686A (en) |
AU (1) | AU509289B2 (en) |
BE (1) | BE852514A (en) |
CA (1) | CA1081863A (en) |
DE (1) | DE2711361A1 (en) |
FR (1) | FR2344962A1 (en) |
GB (1) | GB1574658A (en) |
IN (1) | IN147292B (en) |
NL (1) | NL187508C (en) |
SE (1) | SE7702883L (en) |
ZA (1) | ZA771188B (en) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
DE2627855A1 (en) * | 1976-06-22 | 1977-12-29 | Siemens Ag | SEMI-CONDUCTOR COMPONENT WITH AT LEAST TWO ZONES FORMING A PN-TRANSITION, DIFFERENT LINE TYPES AND PROCESS FOR THEIR PRODUCTION |
US4259683A (en) * | 1977-02-07 | 1981-03-31 | General Electric Company | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
JPS53110483A (en) * | 1977-03-09 | 1978-09-27 | Hitachi Ltd | Thyristor |
US4137099A (en) * | 1977-07-11 | 1979-01-30 | General Electric Company | Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments |
US4292644A (en) * | 1977-08-26 | 1981-09-29 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
DE2755418A1 (en) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT |
US4113514A (en) * | 1978-01-16 | 1978-09-12 | Rca Corporation | Method of passivating a semiconductor device by treatment with atomic hydrogen |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4278475A (en) * | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
US4230791A (en) * | 1979-04-02 | 1980-10-28 | General Electric Company | Control of valley current in a unijunction transistor by electron irradiation |
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
US4318750A (en) * | 1979-12-28 | 1982-03-09 | Westinghouse Electric Corp. | Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects |
IN152079B (en) * | 1980-01-09 | 1983-10-08 | Westinghouse Electric Corp | |
US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
JPS60207376A (en) * | 1984-03-31 | 1985-10-18 | Toyota Central Res & Dev Lab Inc | High-speed electrostatic induction thyristor and manufacture thereof |
US4620211A (en) * | 1984-08-13 | 1986-10-28 | General Electric Company | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
US4752818A (en) * | 1985-09-28 | 1988-06-21 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor device with multiple recombination center layers |
JPS6276556A (en) * | 1985-09-28 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | High-speed electrostatic induction thyristor |
JP2604580B2 (en) * | 1986-10-01 | 1997-04-30 | 三菱電機株式会社 | Anode short-circuit type gate turn-off thyristor |
JPS649658A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Gto thyristor |
JPH0722198B2 (en) * | 1987-07-15 | 1995-03-08 | 富士電機株式会社 | Insulated gate type bipolar transistor |
US5510274A (en) * | 1987-08-19 | 1996-04-23 | Mitsubishi Denki Kabushiki Kaisha | Method of controlling a carrier lifetime in a semiconductor switching device |
GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
EP0343369A1 (en) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Process for manufacturing a thyristor |
DE59003052D1 (en) * | 1989-05-18 | 1993-11-18 | Asea Brown Boveri | Semiconductor device. |
US5284780A (en) * | 1989-09-28 | 1994-02-08 | Siemens Aktiengesellschaft | Method for increasing the electric strength of a multi-layer semiconductor component |
US5243205A (en) * | 1989-10-16 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device with overvoltage protective function |
US5554883A (en) * | 1990-04-28 | 1996-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
US5247230A (en) * | 1992-06-02 | 1993-09-21 | Lucerne Products, Inc. | Unilateral diac for motor speed control |
DE4421529C2 (en) * | 1994-06-20 | 1996-04-18 | Semikron Elektronik Gmbh | Fast power diode |
DE59605827D1 (en) * | 1995-07-03 | 2000-10-05 | Siemens Ag | THYRISTOR WITH LAYER REDUCED CARGO LIFETIME |
JP3394383B2 (en) * | 1996-03-18 | 2003-04-07 | 三菱電機株式会社 | Thyristor manufacturing method and thyristor |
JP3238415B2 (en) | 1996-09-30 | 2001-12-17 | オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト | Thyristor with breakdown region |
DE19650762A1 (en) * | 1996-09-30 | 1998-07-02 | Eupec Gmbh & Co Kg | Thyristor with breakdown area |
DE19649800A1 (en) * | 1996-12-02 | 1998-06-04 | Asea Brown Boveri | Method for producing a turn-off thyristor with an anode-side stop layer and a transparent anode emitter |
US6274892B1 (en) * | 1998-03-09 | 2001-08-14 | Intersil Americas Inc. | Devices formable by low temperature direct bonding |
JP4775539B2 (en) * | 2005-03-22 | 2011-09-21 | サンケン電気株式会社 | Manufacturing method of semiconductor devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
JPS4837232B1 (en) * | 1968-12-04 | 1973-11-09 | ||
JPS5226433B2 (en) * | 1971-09-18 | 1977-07-14 | ||
US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
US3877997A (en) * | 1973-03-20 | 1975-04-15 | Westinghouse Electric Corp | Selective irradiation for fast switching thyristor with low forward voltage drop |
-
1976
- 1976-03-17 US US05/667,791 patent/US4056408A/en not_active Expired - Lifetime
-
1977
- 1977-02-28 ZA ZA00771188A patent/ZA771188B/en unknown
- 1977-03-02 IN IN307/CAL/77A patent/IN147292B/en unknown
- 1977-03-08 CA CA273,492A patent/CA1081863A/en not_active Expired
- 1977-03-09 GB GB9859/77A patent/GB1574658A/en not_active Expired
- 1977-03-10 AU AU23128/77A patent/AU509289B2/en not_active Expired
- 1977-03-15 SE SE7702883A patent/SE7702883L/en not_active Application Discontinuation
- 1977-03-15 NL NLAANVRAGE7702755,A patent/NL187508C/en not_active IP Right Cessation
- 1977-03-16 BE BE175822A patent/BE852514A/en not_active IP Right Cessation
- 1977-03-16 DE DE19772711361 patent/DE2711361A1/en active Granted
- 1977-03-17 JP JP2875077A patent/JPS52113686A/en active Pending
- 1977-03-17 FR FR7708025A patent/FR2344962A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
ZA771188B (en) | 1978-01-25 |
JPS52113686A (en) | 1977-09-22 |
BE852514A (en) | 1977-09-16 |
DE2711361C2 (en) | 1988-06-16 |
GB1574658A (en) | 1980-09-10 |
AU509289B2 (en) | 1980-05-01 |
DE2711361A1 (en) | 1977-09-22 |
CA1081863A (en) | 1980-07-15 |
SE7702883L (en) | 1977-09-18 |
IN147292B (en) | 1980-01-19 |
FR2344962A1 (en) | 1977-10-14 |
FR2344962B1 (en) | 1984-07-20 |
NL7702755A (en) | 1977-09-20 |
NL187508B (en) | 1991-05-16 |
AU2312877A (en) | 1978-09-14 |
US4056408A (en) | 1977-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |