DE69509313D1 - Herstellungsverfahren für eine Halbleiterlaservorrichtung mit Mg-dotierten Deck- und Kontaktschichten - Google Patents
Herstellungsverfahren für eine Halbleiterlaservorrichtung mit Mg-dotierten Deck- und KontaktschichtenInfo
- Publication number
- DE69509313D1 DE69509313D1 DE69509313T DE69509313T DE69509313D1 DE 69509313 D1 DE69509313 D1 DE 69509313D1 DE 69509313 T DE69509313 T DE 69509313T DE 69509313 T DE69509313 T DE 69509313T DE 69509313 D1 DE69509313 D1 DE 69509313D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- laser device
- contact layers
- doped cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/06—LPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16505994A JP3195715B2 (ja) | 1994-07-18 | 1994-07-18 | 半導体レーザ素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69509313D1 true DE69509313D1 (de) | 1999-06-02 |
DE69509313T2 DE69509313T2 (de) | 1999-11-04 |
Family
ID=15805077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69509313T Expired - Fee Related DE69509313T2 (de) | 1994-07-18 | 1995-07-11 | Herstellungsverfahren für eine Halbleiterlaservorrichtung mit Mg-dotierten Deck- und Kontaktschichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5932004A (de) |
EP (1) | EP0693810B1 (de) |
JP (1) | JP3195715B2 (de) |
CN (1) | CN1076878C (de) |
DE (1) | DE69509313T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6009113A (en) * | 1994-07-18 | 1999-12-28 | Sharp Kabushiki Kaisha | Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same |
JP3423203B2 (ja) * | 1997-03-11 | 2003-07-07 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
JP2003086886A (ja) * | 2001-07-02 | 2003-03-20 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
JP2003273467A (ja) | 2002-03-15 | 2003-09-26 | Toshiba Corp | 半導体レーザおよびその製造方法 |
CN111509560A (zh) * | 2020-04-22 | 2020-08-07 | 欧菲微电子技术有限公司 | 垂直腔面发射激光器、制备方法及摄像头模组 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1049127A (en) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Semiconductor devices with improved heat radiation and current concentration |
US4088514A (en) * | 1975-04-17 | 1978-05-09 | Matsushita Electric Industrial Co., Ltd. | Method for epitaxial growth of thin semiconductor layer from solution |
JPS58156598A (ja) * | 1982-03-09 | 1983-09-17 | Semiconductor Res Found | 結晶成長法 |
EP0160490B1 (de) * | 1984-04-24 | 1992-07-08 | Sharp Kabushiki Kaisha | Halbleiterlaser |
JPS61163689A (ja) * | 1985-01-14 | 1986-07-24 | Sharp Corp | 半導体装置の製造方法 |
JPS61276316A (ja) * | 1985-05-31 | 1986-12-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
JPH01152789A (ja) * | 1987-12-10 | 1989-06-15 | Mitsubishi Electric Corp | 半導体レーザ装置およびその製造方法 |
JP2508409B2 (ja) * | 1990-11-26 | 1996-06-19 | 三菱電機株式会社 | 半導体レ―ザ装置 |
JPH05102604A (ja) * | 1991-10-11 | 1993-04-23 | Fuji Xerox Co Ltd | 半導体レーザ装置 |
US5369658A (en) * | 1992-06-26 | 1994-11-29 | Rohm Co., Ltd. | Semiconductor laser |
JPH1152789A (ja) * | 1997-07-30 | 1999-02-26 | Minolta Co Ltd | 画像形成装置 |
-
1994
- 1994-07-18 JP JP16505994A patent/JP3195715B2/ja not_active Expired - Fee Related
-
1995
- 1995-07-11 DE DE69509313T patent/DE69509313T2/de not_active Expired - Fee Related
- 1995-07-11 EP EP95304852A patent/EP0693810B1/de not_active Expired - Lifetime
- 1995-07-18 CN CN95107295A patent/CN1076878C/zh not_active Expired - Fee Related
-
1997
- 1997-05-22 US US08/861,762 patent/US5932004A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0693810A3 (de) | 1996-04-03 |
CN1076878C (zh) | 2001-12-26 |
EP0693810A2 (de) | 1996-01-24 |
JP3195715B2 (ja) | 2001-08-06 |
JPH0832170A (ja) | 1996-02-02 |
DE69509313T2 (de) | 1999-11-04 |
EP0693810B1 (de) | 1999-04-28 |
CN1117657A (zh) | 1996-02-28 |
US5932004A (en) | 1999-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |