DE69613177D1 - Laservorrichtung mit vergrabener Struktur für integrierte photonische Schaltung und Herstellungsverfahren - Google Patents
Laservorrichtung mit vergrabener Struktur für integrierte photonische Schaltung und HerstellungsverfahrenInfo
- Publication number
- DE69613177D1 DE69613177D1 DE69613177T DE69613177T DE69613177D1 DE 69613177 D1 DE69613177 D1 DE 69613177D1 DE 69613177 T DE69613177 T DE 69613177T DE 69613177 T DE69613177 T DE 69613177T DE 69613177 D1 DE69613177 D1 DE 69613177D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- laser device
- buried structure
- integrated photonic
- photonic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9508200A FR2736473B1 (fr) | 1995-07-06 | 1995-07-06 | Dispositif laser a structure enterree pour circuit photonique integre et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69613177D1 true DE69613177D1 (de) | 2001-07-12 |
DE69613177T2 DE69613177T2 (de) | 2001-09-27 |
Family
ID=9480757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69613177T Expired - Fee Related DE69613177T2 (de) | 1995-07-06 | 1996-07-05 | Laservorrichtung mit vergrabener Struktur für integrierte photonische Schaltung und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US5796768A (de) |
EP (1) | EP0752743B1 (de) |
DE (1) | DE69613177T2 (de) |
FR (1) | FR2736473B1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2765031B1 (fr) * | 1997-06-19 | 1999-09-24 | Alsthom Cge Alcatel | Controle de la profondeur de gravure dans la fabrication de composants semiconducteurs |
JP4117854B2 (ja) * | 1997-06-20 | 2008-07-16 | シャープ株式会社 | 導波路型光集積回路素子及びその製造方法 |
FR2781577B1 (fr) * | 1998-07-06 | 2000-09-08 | Alsthom Cge Alcatel | Procede de fabrication d'un circuit optique integre |
JP4768127B2 (ja) * | 1998-11-10 | 2011-09-07 | ネオフォトニクス・コーポレイション | 熱光学ポリマーを含むフォトニックデバイス |
EP1186918B1 (de) * | 2000-09-06 | 2005-03-02 | Corning Incorporated | Kompensation des Brechungsindexes von aufgeputschtem InP |
FR2820891B1 (fr) * | 2001-02-13 | 2004-08-27 | Cit Alcatel | Laser semi conducteur a ruban enterre et procede de fabrication |
WO2003021734A1 (en) * | 2001-09-04 | 2003-03-13 | Massachusetts Institute Of Technology | On-chip optical amplifier |
GB0126642D0 (en) * | 2001-11-06 | 2002-01-02 | Denselight Semiconductors Pte | Design of current blocking structure to improve semiconductor laser performance |
KR100413527B1 (ko) | 2002-01-29 | 2004-01-03 | 한국전자통신연구원 | 단일 집적 반도체 광소자 제작방법 |
KR100427581B1 (ko) | 2002-02-21 | 2004-04-28 | 한국전자통신연구원 | 반도체 광소자의 제조방법 |
JP4472278B2 (ja) * | 2003-06-26 | 2010-06-02 | 三菱電機株式会社 | 半導体レーザ素子 |
KR20050001605A (ko) * | 2003-06-26 | 2005-01-07 | 삼성전기주식회사 | 반도체 레이저 소자 및 그 제조방법 |
JP2005064051A (ja) * | 2003-08-14 | 2005-03-10 | Fibest Ltd | 光モジュールおよび光通信システム |
KR100617693B1 (ko) * | 2003-08-20 | 2006-08-28 | 삼성전자주식회사 | 광검출기를 구비하는 반도체 광증폭 장치 및 그 제조방법 |
US20090272577A1 (en) * | 2006-04-27 | 2009-11-05 | Neomax Materials Co., Ltd. | Clad material for wiring connection and wiring connection member processed from the clad material |
CN102570303B (zh) * | 2012-03-06 | 2013-09-18 | 北京航空航天大学 | 一种亚波长表面等离子体激光器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5147825A (en) * | 1988-08-26 | 1992-09-15 | Bell Telephone Laboratories, Inc. | Photonic-integrated-circuit fabrication process |
GB8900729D0 (en) * | 1989-01-13 | 1989-03-08 | British Telecomm | Semiconductor laser amplifiers |
CA2018928C (en) * | 1989-06-14 | 1994-07-26 | Akihiko Oka | Semiconductor laser device |
US4953170A (en) * | 1989-06-15 | 1990-08-28 | At&T Bell Laboratories | Method for forming a heteroepitaxial structure, and a device manufactured thereby |
US5070510A (en) * | 1989-12-12 | 1991-12-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
FR2656432B1 (fr) * | 1989-12-22 | 1992-03-20 | Thomson Csf | Procede de realisation d'un dispositif optoelectronique amplificateur, dispositif obtenu par ce procede et applications a des dispositifs optoelectroniques divers. |
FR2719388B1 (fr) * | 1994-05-02 | 1996-07-19 | Frederic Ghirardi | Dispositif semi-conducteur optoélectronique comportant un adaptateur de mode intégré. |
US5568499A (en) * | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
-
1995
- 1995-07-06 FR FR9508200A patent/FR2736473B1/fr not_active Expired - Fee Related
-
1996
- 1996-06-28 US US08/670,876 patent/US5796768A/en not_active Expired - Lifetime
- 1996-07-05 DE DE69613177T patent/DE69613177T2/de not_active Expired - Fee Related
- 1996-07-05 EP EP96401494A patent/EP0752743B1/de not_active Expired - Lifetime
-
1998
- 1998-05-06 US US09/073,459 patent/US6025207A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5796768A (en) | 1998-08-18 |
US6025207A (en) | 2000-02-15 |
FR2736473B1 (fr) | 1997-09-12 |
FR2736473A1 (fr) | 1997-01-10 |
EP0752743B1 (de) | 2001-06-06 |
EP0752743A1 (de) | 1997-01-08 |
DE69613177T2 (de) | 2001-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT, |
|
8339 | Ceased/non-payment of the annual fee |