DE69504526T2 - Herstellung von metallorganischen verbindungen - Google Patents
Herstellung von metallorganischen verbindungenInfo
- Publication number
- DE69504526T2 DE69504526T2 DE69504526T DE69504526T DE69504526T2 DE 69504526 T2 DE69504526 T2 DE 69504526T2 DE 69504526 T DE69504526 T DE 69504526T DE 69504526 T DE69504526 T DE 69504526T DE 69504526 T2 DE69504526 T2 DE 69504526T2
- Authority
- DE
- Germany
- Prior art keywords
- pct
- production
- adduct
- metalorganic
- organic compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000002902 organometallic compounds Chemical class 0.000 title abstract 3
- 239000007818 Grignard reagent Substances 0.000 abstract 1
- 125000003282 alkyl amino group Chemical group 0.000 abstract 1
- 150000004795 grignard reagents Chemical class 0.000 abstract 1
- 229910001507 metal halide Inorganic materials 0.000 abstract 1
- 150000005309 metal halides Chemical class 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/505—Preparation; Separation; Purification; Stabilisation
- C07F9/5063—Preparation; Separation; Purification; Stabilisation from compounds having the structure P-H or P-Heteroatom, in which one or more of such bonds are converted into P-C bonds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9417707A GB9417707D0 (en) | 1994-09-02 | 1994-09-02 | Metaloganic compounds |
GBGB9508702.9A GB9508702D0 (en) | 1995-04-28 | 1995-04-28 | Metalorganic compounds |
PCT/GB1995/002087 WO1996007660A1 (en) | 1994-09-02 | 1995-09-04 | Metalorganic compounds |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69504526D1 DE69504526D1 (de) | 1998-10-08 |
DE69504526T2 true DE69504526T2 (de) | 1999-05-27 |
Family
ID=26305554
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526092T Expired - Fee Related DE69526092T2 (de) | 1994-09-02 | 1995-09-04 | Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten |
DE69504526T Expired - Fee Related DE69504526T2 (de) | 1994-09-02 | 1995-09-04 | Herstellung von metallorganischen verbindungen |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526092T Expired - Fee Related DE69526092T2 (de) | 1994-09-02 | 1995-09-04 | Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten |
Country Status (11)
Country | Link |
---|---|
US (2) | US5886203A (de) |
EP (2) | EP0778837B1 (de) |
JP (2) | JPH10505355A (de) |
KR (2) | KR100367022B1 (de) |
CN (2) | CN1051554C (de) |
AT (1) | ATE170525T1 (de) |
CA (2) | CA2198453C (de) |
DE (2) | DE69526092T2 (de) |
GB (2) | GB2306960B (de) |
MY (2) | MY112170A (de) |
WO (2) | WO1996007661A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6515141B1 (en) | 1999-08-26 | 2003-02-04 | Fujisawa Pharmaceutical Co., Ltd. | Process for the preparation of indole derivatives or salts thereof |
JP4757370B2 (ja) * | 2000-05-30 | 2011-08-24 | 住友化学株式会社 | エピタキシャル基板の製造方法 |
JP4472338B2 (ja) * | 2001-10-26 | 2010-06-02 | シグマ−アルドリッチ・カンパニー | 化学気相成長のための改良された前駆体 |
TW200619222A (en) * | 2004-09-02 | 2006-06-16 | Rohm & Haas Elect Mat | Method for making organometallic compounds |
JP4470682B2 (ja) * | 2004-10-13 | 2010-06-02 | 住友化学株式会社 | トリメチルガリウムの製造方法 |
JP5300713B2 (ja) * | 2007-03-09 | 2013-09-25 | 大塚化学株式会社 | 6−ヒドロキシエチルペナム化合物の製造方法 |
US11470981B2 (en) | 2010-05-03 | 2022-10-18 | Levitation Sciences Llc | Four-in-one mattress management system |
US9145612B2 (en) * | 2012-07-06 | 2015-09-29 | Applied Materials, Inc. | Deposition of N-metal films comprising aluminum alloys |
US9617284B2 (en) | 2013-08-22 | 2017-04-11 | Umicore Ag & Co. Kg | Method for producing alkyl-indium compounds and the use thereof |
US9389181B2 (en) | 2014-06-06 | 2016-07-12 | International Business Machines Corporation | Methods and apparatus for detecting metals in liquids |
US9656239B2 (en) | 2014-06-16 | 2017-05-23 | International Business Machines Corporation | Apparatus for controlling metals in liquids |
CN106349293B (zh) * | 2016-08-27 | 2018-07-06 | 广东先导稀材股份有限公司 | 高纯三乙基锑的制备方法 |
US11673903B2 (en) | 2018-04-11 | 2023-06-13 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
US10787466B2 (en) | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
TWI822595B (zh) | 2018-06-21 | 2023-11-11 | 美商英培雅股份有限公司 | 包含溶劑與單烷基錫三烷氧化物之混合物的溶液、及使用其的方法 |
KR102261084B1 (ko) * | 2018-11-09 | 2021-06-07 | 주식회사 레이크머티리얼즈 | 유기 금속 박막 전구체 및 이의 제조 방법 |
US11966158B2 (en) | 2019-01-30 | 2024-04-23 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods |
US11498934B2 (en) | 2019-01-30 | 2022-11-15 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2111998A (en) * | 1981-11-25 | 1983-07-13 | Secr Defence | The preparation of adducts which may be used in the preparation of compound semiconductor materials |
JPS5988039A (ja) * | 1982-11-11 | 1984-05-21 | ライオン株式会社 | イスパグ−ラハスク含有食品生地 |
GB8316605D0 (en) * | 1983-06-17 | 1983-07-20 | Secr Defence | Preparation of metal alkyls |
EP0216887B1 (de) * | 1985-04-09 | 1991-07-10 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Verfahren zur herstellung von gruppe-ii-metallalkylen |
EP0387933B1 (de) * | 1989-03-16 | 1993-08-04 | The Procter & Gamble Company | Psyllium enthaltende Kekse mit hohem Fasergehalt |
JPH0360805A (ja) * | 1989-07-28 | 1991-03-15 | Sumitomo Metal Ind Ltd | 熱延鋼帯コイルの保熱方法および装置 |
JPH0430765A (ja) * | 1990-05-25 | 1992-02-03 | Fuji Oil Co Ltd | 粒状繊維食品とその製造方法及び栄養強化パンの製造方法 |
DE4017966C2 (de) * | 1990-06-05 | 1996-05-30 | Ppm Pure Metals Gmbh | Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase |
-
1995
- 1995-09-01 MY MYPI95002599A patent/MY112170A/en unknown
- 1995-09-01 MY MYPI95002600A patent/MY112590A/en unknown
- 1995-09-04 DE DE69526092T patent/DE69526092T2/de not_active Expired - Fee Related
- 1995-09-04 EP EP95930631A patent/EP0778837B1/de not_active Expired - Lifetime
- 1995-09-04 DE DE69504526T patent/DE69504526T2/de not_active Expired - Fee Related
- 1995-09-04 EP EP95930633A patent/EP0778838B1/de not_active Expired - Lifetime
- 1995-09-04 AT AT95930631T patent/ATE170525T1/de not_active IP Right Cessation
- 1995-09-04 CN CN95194877A patent/CN1051554C/zh not_active Expired - Fee Related
- 1995-09-04 CN CN95194873A patent/CN1051553C/zh not_active Expired - Fee Related
- 1995-09-04 KR KR1019970701389A patent/KR100367022B1/ko not_active IP Right Cessation
- 1995-09-04 KR KR1019970701390A patent/KR100367023B1/ko not_active IP Right Cessation
- 1995-09-04 CA CA002198453A patent/CA2198453C/en not_active Expired - Fee Related
- 1995-09-04 WO PCT/GB1995/002089 patent/WO1996007661A1/en active IP Right Grant
- 1995-09-04 CA CA002198588A patent/CA2198588C/en not_active Expired - Fee Related
- 1995-09-04 US US08/793,809 patent/US5886203A/en not_active Expired - Fee Related
- 1995-09-04 GB GB9703701A patent/GB2306960B/en not_active Expired - Fee Related
- 1995-09-04 JP JP8509296A patent/JPH10505355A/ja active Pending
- 1995-09-04 US US08/793,810 patent/US5980978A/en not_active Expired - Lifetime
- 1995-09-04 GB GB9704270A patent/GB2306165B/en not_active Expired - Fee Related
- 1995-09-04 JP JP8509298A patent/JPH10505199A/ja not_active Withdrawn
- 1995-09-04 WO PCT/GB1995/002087 patent/WO1996007660A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JPH10505199A (ja) | 1998-05-19 |
US5886203A (en) | 1999-03-23 |
CN1158131A (zh) | 1997-08-27 |
GB9703701D0 (en) | 1997-04-09 |
MY112170A (en) | 2001-04-30 |
DE69504526D1 (de) | 1998-10-08 |
JPH10505355A (ja) | 1998-05-26 |
GB2306165B (en) | 1998-07-01 |
MY112590A (en) | 2001-07-31 |
EP0778837A1 (de) | 1997-06-18 |
CA2198453A1 (en) | 1996-03-14 |
DE69526092D1 (de) | 2002-05-02 |
GB2306960A (en) | 1997-05-14 |
ATE170525T1 (de) | 1998-09-15 |
GB2306960B (en) | 1998-07-08 |
WO1996007660A1 (en) | 1996-03-14 |
KR970705568A (ko) | 1997-10-09 |
CN1051553C (zh) | 2000-04-19 |
KR100367022B1 (ko) | 2003-04-10 |
EP0778838A1 (de) | 1997-06-18 |
CA2198588C (en) | 2001-08-21 |
US5980978A (en) | 1999-11-09 |
EP0778838B1 (de) | 2002-03-27 |
DE69526092T2 (de) | 2002-11-21 |
GB2306165A (en) | 1997-04-30 |
CN1051554C (zh) | 2000-04-19 |
CA2198453C (en) | 2002-02-19 |
CA2198588A1 (en) | 1996-03-14 |
KR100367023B1 (ko) | 2003-04-11 |
GB9704270D0 (en) | 1997-04-16 |
CN1156996A (zh) | 1997-08-13 |
WO1996007661A1 (en) | 1996-03-14 |
EP0778837B1 (de) | 1998-09-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |