DE69526092D1 - Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten - Google Patents

Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten

Info

Publication number
DE69526092D1
DE69526092D1 DE69526092T DE69526092T DE69526092D1 DE 69526092 D1 DE69526092 D1 DE 69526092D1 DE 69526092 T DE69526092 T DE 69526092T DE 69526092 T DE69526092 T DE 69526092T DE 69526092 D1 DE69526092 D1 DE 69526092D1
Authority
DE
Germany
Prior art keywords
metal
pct
training
organic compound
semiconductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526092T
Other languages
English (en)
Other versions
DE69526092T2 (de
Inventor
Copeland Jones
Andrew Rushworth
Trevor Martin
John Whittaker
William Freer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9417707A external-priority patent/GB9417707D0/en
Priority claimed from GBGB9508702.9A external-priority patent/GB9508702D0/en
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of DE69526092D1 publication Critical patent/DE69526092D1/de
Publication of DE69526092T2 publication Critical patent/DE69526092T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/505—Preparation; Separation; Purification; Stabilisation
    • C07F9/5063—Preparation; Separation; Purification; Stabilisation from compounds having the structure P-H or P-Heteroatom, in which one or more of such bonds are converted into P-C bonds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
DE69526092T 1994-09-02 1995-09-04 Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten Expired - Fee Related DE69526092T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9417707A GB9417707D0 (en) 1994-09-02 1994-09-02 Metaloganic compounds
GBGB9508702.9A GB9508702D0 (en) 1995-04-28 1995-04-28 Metalorganic compounds
PCT/GB1995/002089 WO1996007661A1 (en) 1994-09-02 1995-09-04 Formation of a metalorganic compound for growing epitaxial semiconductor layers

Publications (2)

Publication Number Publication Date
DE69526092D1 true DE69526092D1 (de) 2002-05-02
DE69526092T2 DE69526092T2 (de) 2002-11-21

Family

ID=26305554

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69526092T Expired - Fee Related DE69526092T2 (de) 1994-09-02 1995-09-04 Ausbildung einer metallorganischen verbindung für das epitaktische wachstum von metall- und halbleiterschichten
DE69504526T Expired - Fee Related DE69504526T2 (de) 1994-09-02 1995-09-04 Herstellung von metallorganischen verbindungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69504526T Expired - Fee Related DE69504526T2 (de) 1994-09-02 1995-09-04 Herstellung von metallorganischen verbindungen

Country Status (11)

Country Link
US (2) US5980978A (de)
EP (2) EP0778837B1 (de)
JP (2) JPH10505199A (de)
KR (2) KR100367022B1 (de)
CN (2) CN1051553C (de)
AT (1) ATE170525T1 (de)
CA (2) CA2198588C (de)
DE (2) DE69526092T2 (de)
GB (2) GB2306165B (de)
MY (2) MY112170A (de)
WO (2) WO1996007660A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1382123A (zh) 1999-08-26 2002-11-27 藤泽药品工业株式会社 吲哚衍生物或其盐的制造方法
JP4757370B2 (ja) * 2000-05-30 2011-08-24 住友化学株式会社 エピタキシャル基板の製造方法
CN100379745C (zh) * 2001-10-26 2008-04-09 埃普切公司 化学气相淀积用的改良的前体
TW200619222A (en) * 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
JP4470682B2 (ja) * 2004-10-13 2010-06-02 住友化学株式会社 トリメチルガリウムの製造方法
US8293893B2 (en) * 2007-03-09 2012-10-23 Otsuka Chemical Co., Ltd. Method for producing 6-hydroxyethylpenam compound
US11470981B2 (en) 2010-05-03 2022-10-18 Levitation Sciences Llc Four-in-one mattress management system
US9145612B2 (en) 2012-07-06 2015-09-29 Applied Materials, Inc. Deposition of N-metal films comprising aluminum alloys
EP3036243B1 (de) 2013-08-22 2019-10-09 Umicore AG & Co. KG Verfahren zur herstellung von alkylindium-verbindungen und deren verwendung
US9389181B2 (en) 2014-06-06 2016-07-12 International Business Machines Corporation Methods and apparatus for detecting metals in liquids
US9656239B2 (en) 2014-06-16 2017-05-23 International Business Machines Corporation Apparatus for controlling metals in liquids
CN106349293B (zh) * 2016-08-27 2018-07-06 广东先导稀材股份有限公司 高纯三乙基锑的制备方法
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
KR102698582B1 (ko) 2018-06-21 2024-08-23 인프리아 코포레이션 모노알킬 주석 알콕사이드 및 이들의 가수분해 및 축합 생성물의 안정적인 용액
KR102261084B1 (ko) * 2018-11-09 2021-06-07 주식회사 레이크머티리얼즈 유기 금속 박막 전구체 및 이의 제조 방법
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US12072626B2 (en) 2021-02-19 2024-08-27 Inpria Corporation Organometallic radiation patternable coatings with low defectivity and corresponding methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0080844A1 (de) * 1981-11-25 1983-06-08 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Herstellung von für die Gewinnung von Materialien aus Halbleiterverbindungen verwendbaren Addukten
JPS5988039A (ja) * 1982-11-11 1984-05-21 ライオン株式会社 イスパグ−ラハスク含有食品生地
GB8316605D0 (en) * 1983-06-17 1983-07-20 Secr Defence Preparation of metal alkyls
US4812586A (en) * 1985-04-09 1989-03-14 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Preparation of Group II metal alkyls
DK0387933T3 (da) * 1989-03-16 1993-12-06 Procter & Gamble Psylliumholdige, bagte småkagesammensætninger
JPH0360805A (ja) * 1989-07-28 1991-03-15 Sumitomo Metal Ind Ltd 熱延鋼帯コイルの保熱方法および装置
JPH0430765A (ja) * 1990-05-25 1992-02-03 Fuji Oil Co Ltd 粒状繊維食品とその製造方法及び栄養強化パンの製造方法
DE4017966C2 (de) * 1990-06-05 1996-05-30 Ppm Pure Metals Gmbh Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase

Also Published As

Publication number Publication date
ATE170525T1 (de) 1998-09-15
CA2198453C (en) 2002-02-19
CA2198588C (en) 2001-08-21
EP0778837B1 (de) 1998-09-02
GB2306165B (en) 1998-07-01
US5886203A (en) 1999-03-23
DE69504526D1 (de) 1998-10-08
KR100367022B1 (ko) 2003-04-10
WO1996007661A1 (en) 1996-03-14
EP0778838B1 (de) 2002-03-27
DE69526092T2 (de) 2002-11-21
JPH10505199A (ja) 1998-05-19
DE69504526T2 (de) 1999-05-27
CN1051553C (zh) 2000-04-19
MY112590A (en) 2001-07-31
WO1996007660A1 (en) 1996-03-14
GB2306960A (en) 1997-05-14
GB2306165A (en) 1997-04-30
CA2198588A1 (en) 1996-03-14
CN1051554C (zh) 2000-04-19
GB9703701D0 (en) 1997-04-09
GB9704270D0 (en) 1997-04-16
GB2306960B (en) 1998-07-08
CN1158131A (zh) 1997-08-27
JPH10505355A (ja) 1998-05-26
EP0778838A1 (de) 1997-06-18
US5980978A (en) 1999-11-09
EP0778837A1 (de) 1997-06-18
KR100367023B1 (ko) 2003-04-11
CA2198453A1 (en) 1996-03-14
MY112170A (en) 2001-04-30
KR970705568A (ko) 1997-10-09
CN1156996A (zh) 1997-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee