DE69434643D1 - Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes - Google Patents

Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes

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Publication number
DE69434643D1
DE69434643D1 DE69434643T DE69434643T DE69434643D1 DE 69434643 D1 DE69434643 D1 DE 69434643D1 DE 69434643 T DE69434643 T DE 69434643T DE 69434643 T DE69434643 T DE 69434643T DE 69434643 D1 DE69434643 D1 DE 69434643D1
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DE
Germany
Prior art keywords
manufacture
edge
power mosfet
mosfet incorporating
incorporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69434643T
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English (en)
Other versions
DE69434643T2 (de
Inventor
Fwu-Iuan Hshieh
Mike Chang
Jun Wei Chen
King Owyang
Dorman C Pitzer
Der Linde Jan Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
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Siliconix Inc
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Publication of DE69434643D1 publication Critical patent/DE69434643D1/de
Application granted granted Critical
Publication of DE69434643T2 publication Critical patent/DE69434643T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/314—Inorganic layers
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    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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    • H01L29/66007—Multistep manufacturing processes
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69434643T 1993-07-22 1994-07-22 Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes Expired - Lifetime DE69434643T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96135 1993-07-22
US08/096,135 US5404040A (en) 1990-12-21 1993-07-22 Structure and fabrication of power MOSFETs, including termination structures

Publications (2)

Publication Number Publication Date
DE69434643D1 true DE69434643D1 (de) 2006-04-27
DE69434643T2 DE69434643T2 (de) 2006-10-05

Family

ID=22255651

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69434643T Expired - Lifetime DE69434643T2 (de) 1993-07-22 1994-07-22 Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes
DE0635888T Pending DE635888T1 (de) 1993-07-22 1994-07-22 Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE0635888T Pending DE635888T1 (de) 1993-07-22 1994-07-22 Struktur und Herstellung von Leistungs-MOSFET unter Einbeziehung der Struktur des Randes.

Country Status (5)

Country Link
US (2) US5404040A (de)
EP (1) EP0635888B1 (de)
JP (1) JP3717195B2 (de)
DE (2) DE69434643T2 (de)
SG (1) SG48915A1 (de)

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US5521409A (en) 1996-05-28
US5404040A (en) 1995-04-04
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SG48915A1 (en) 1998-05-18
DE635888T1 (de) 1995-10-12
JP3717195B2 (ja) 2005-11-16
EP0635888A1 (de) 1995-01-25

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