DE69432203T8 - Methode zur Kontrolle und Evaluierung einer Halbleiterscheibenfabrikation - Google Patents

Methode zur Kontrolle und Evaluierung einer Halbleiterscheibenfabrikation Download PDF

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Publication number
DE69432203T8
DE69432203T8 DE69432203T DE69432203T DE69432203T8 DE 69432203 T8 DE69432203 T8 DE 69432203T8 DE 69432203 T DE69432203 T DE 69432203T DE 69432203 T DE69432203 T DE 69432203T DE 69432203 T8 DE69432203 T8 DE 69432203T8
Authority
DE
Germany
Prior art keywords
evaluation
control
semiconductor wafer
wafer production
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69432203T
Other languages
English (en)
Other versions
DE69432203D1 (de
DE69432203T2 (de
Inventor
Jerry A. Stefani
Stephanie W. Butler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69432203D1 publication Critical patent/DE69432203D1/de
Application granted granted Critical
Publication of DE69432203T2 publication Critical patent/DE69432203T2/de
Publication of DE69432203T8 publication Critical patent/DE69432203T8/de
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
DE69432203T 1993-05-13 1994-05-06 Methode zur Kontrolle und Evaluierung einer Halbleiterscheibenfabrikation Expired - Fee Related DE69432203T8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61983 1993-05-13
US08/061,983 US5399229A (en) 1993-05-13 1993-05-13 System and method for monitoring and evaluating semiconductor wafer fabrication

Publications (3)

Publication Number Publication Date
DE69432203D1 DE69432203D1 (de) 2003-04-10
DE69432203T2 DE69432203T2 (de) 2004-01-08
DE69432203T8 true DE69432203T8 (de) 2004-10-14

Family

ID=22039482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432203T Expired - Fee Related DE69432203T8 (de) 1993-05-13 1994-05-06 Methode zur Kontrolle und Evaluierung einer Halbleiterscheibenfabrikation

Country Status (6)

Country Link
US (1) US5399229A (de)
EP (1) EP0631304B1 (de)
JP (1) JP3892913B2 (de)
KR (1) KR100299635B1 (de)
DE (1) DE69432203T8 (de)
TW (1) TW264564B (de)

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US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
FR2737806B1 (fr) * 1995-08-11 1997-09-12 Soc D Production Et De Rech Ap Dispositif et procede de traitement de surface par laser
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness
US5654903A (en) * 1995-11-07 1997-08-05 Lucent Technologies Inc. Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
US5943550A (en) * 1996-03-29 1999-08-24 Advanced Micro Devices, Inc. Method of processing a semiconductor wafer for controlling drive current
US6649075B1 (en) 1996-07-23 2003-11-18 Applied Materials, Inc. Method and apparatus for measuring etch uniformity of a semiconductor wafer
JPH10125753A (ja) * 1996-09-02 1998-05-15 Murata Mfg Co Ltd 半導体のキャリア濃度測定方法、半導体デバイス製造方法及び半導体ウエハ
US6278809B1 (en) 1997-05-30 2001-08-21 Ion Optics, Inc. Fiber optic reflectance apparatus for in situ characterization of thin films
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6151119A (en) * 1997-12-19 2000-11-21 Advanced Micro Devices Apparatus and method for determining depth profile characteristics of a dopant material in a semiconductor device
US6151532A (en) 1998-03-03 2000-11-21 Lam Research Corporation Method and apparatus for predicting plasma-process surface profiles
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6850874B1 (en) 1998-04-17 2005-02-01 United Technologies Corporation Method and apparatus for predicting a characteristic of a product attribute formed by a machining process using a model of the process
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
GB9822690D0 (en) 1998-10-19 1998-12-09 Secr Defence Layer processing
US6162735A (en) * 1999-03-26 2000-12-19 Infineon Technologies North America Corp. In-situ method for preparing and highlighting of defects for failure analysis
US6615164B1 (en) * 1999-04-15 2003-09-02 Synopsys Inc. Method and apparatus for representing integrated circuit device characteristics using polynomial equations
US6268226B1 (en) * 1999-06-30 2001-07-31 International Business Machines Corporation Reactive ion etch loading measurement technique
US6485990B1 (en) 2000-01-04 2002-11-26 Advanced Micro Devices, Inc. Feed-forward control of an etch processing tool
JP4421054B2 (ja) 2000-03-01 2010-02-24 Ｏｋｉセミコンダクタ宮城株式会社 半導体薄膜の表面形状測定方法
JP4437611B2 (ja) * 2000-11-16 2010-03-24 株式会社ルネサステクノロジ 半導体装置の製造方法
US6519045B2 (en) 2001-01-31 2003-02-11 Rudolph Technologies, Inc. Method and apparatus for measuring very thin dielectric film thickness and creating a stable measurement environment
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6585908B2 (en) * 2001-07-13 2003-07-01 Axcelis Technologies, Inc. Shallow angle interference process and apparatus for determining real-time etching rate
US20030066816A1 (en) * 2001-09-17 2003-04-10 Schultz Gary A. Uniform patterning for deep reactive ion etching
US20040110314A1 (en) * 2002-12-05 2004-06-10 Ravi Kramadhati V. Silicon-on-insulator devices and methods for fabricating the same
JP4694150B2 (ja) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 処理方法及び処理システム
JP2005015885A (ja) * 2003-06-27 2005-01-20 Ebara Corp 基板処理方法及び装置
JP4732726B2 (ja) * 2003-09-09 2011-07-27 セイコーインスツル株式会社 半導体装置の製造方法
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
JP2007040930A (ja) * 2005-08-05 2007-02-15 Ebara Corp 膜厚測定方法及び基板処理装置
US7632542B2 (en) * 2005-10-26 2009-12-15 University Of Maryland Method for controlling uniformity of thin films fabricated in processing systems
DE102006033083B4 (de) * 2006-07-14 2014-01-09 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Reinigung von Substratoberflächen
US8135485B2 (en) * 2007-09-28 2012-03-13 Lam Research Corporation Offset correction techniques for positioning substrates within a processing chamber
US7972969B2 (en) * 2008-03-06 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thinning a substrate
US7482180B1 (en) 2008-04-29 2009-01-27 International Business Machines Corporation Method for determining the impact of layer thicknesses on laminate warpage
DE102008021557B4 (de) * 2008-04-30 2011-07-28 Globalfoundries Inc. Verfahren zum Überwachen einer vorhergesagten Produktqualitätsverteilung
JP2009290150A (ja) * 2008-06-02 2009-12-10 Renesas Technology Corp 半導体装置の製造システムおよび製造方法
WO2015005905A1 (en) 2013-07-09 2015-01-15 Halliburton Energy Services, Inc. Integrated computational elements with laterally-distributed spectral filters
WO2015005904A1 (en) 2013-07-09 2015-01-15 Halliburton Energy Services, Inc. Integrated computational elements with frequency selective surface
EP2926116A4 (de) 2013-12-24 2016-11-30 Halliburton Energy Services Inc In-situ-überwachung der herstellung integrierter rechenelemente
US9495505B2 (en) 2013-12-24 2016-11-15 Halliburton Energy Services, Inc. Adjusting fabrication of integrated computational elements
EP2901135B1 (de) 2013-12-24 2016-08-24 Halliburton Energy Services, Inc. Echtzeitüberwachung der herstellung integrierter berechnungselemente
EP2909762B1 (de) 2013-12-24 2016-12-21 Halliburton Energy Services, Inc. Herstellung von kritischen schichten integrierter rechenelemente
US11274365B2 (en) 2013-12-30 2022-03-15 Halliburton Energy Services, Inc. Determining temperature dependence of complex refractive indices of layer materials during fabrication of integrated computational elements
EP2929319A4 (de) 2013-12-31 2016-12-21 Halliburton Energy Services Inc Herstellung integrierter rechenelemente unter verwendung eines zur anpassung an das räumliche profil einer ablagerungsfahne geformten substratträgers
MX359196B (es) 2014-02-14 2018-09-19 Halliburton Energy Services Inc Espectroscopía in situ para el monitoreo de la fabricación de elementos computacionales integrados.
MX358581B (es) 2014-03-21 2018-08-27 Halliburton Energy Services Inc Elementos computacionales integrados monolíticos de banda limitada.
MX2016015788A (es) 2014-06-13 2017-04-25 Halliburton Energy Services Inc Elemento computacional integrado con multiples superficies selectivas de frecuencia.
US9953887B2 (en) * 2015-04-16 2018-04-24 Lam Research Corporation Measuring individual layer thickness during multi-layer deposition semiconductor processing
JP6256413B2 (ja) * 2015-05-27 2018-01-10 信越半導体株式会社 半導体ウェーハの評価方法
JP6673173B2 (ja) 2016-12-12 2020-03-25 三菱電機株式会社 半導体装置の製造方法
US10551827B2 (en) * 2017-07-25 2020-02-04 Kla-Tencor Corporation Hybrid inspection system for efficient process window discovery

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EP0061237B1 (de) * 1981-03-16 1986-04-16 Energy Conversion Devices, Inc. Optisches Verfahren zur Kontrolle der Schichtdicke
US4571685A (en) * 1982-06-23 1986-02-18 Nec Corporation Production system for manufacturing semiconductor devices
JPH0616475B2 (ja) * 1987-04-03 1994-03-02 三菱電機株式会社 物品の製造システム及び物品の製造方法
US4831549A (en) * 1987-07-28 1989-05-16 Brigham Young University Device and method for correction of robot inaccuracy
US4890239A (en) * 1987-10-20 1989-12-26 Shipley Company, Inc. Lithographic process analysis and control system
DE3901017A1 (de) * 1989-01-14 1990-07-19 Leybold Ag Verfahren und vorrichtung zur ueberwachung des schichtabtrags bei einem trockenaetzprozess
US5166752A (en) * 1990-01-11 1992-11-24 Rudolph Research Corporation Simultaneous multiple angle/multiple wavelength ellipsometer and method
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5200919A (en) * 1990-06-29 1993-04-06 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell with a selectable threshold voltage and methods for its use
JPH04355916A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp ドライエッチング装置
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5293216A (en) * 1990-12-31 1994-03-08 Texas Instruments Incorporated Sensor for semiconductor device manufacturing process control
US5197018A (en) * 1991-03-26 1993-03-23 Texas Instruments Incorporated Apparatus and method for drill wear prediction
US5220405A (en) * 1991-12-20 1993-06-15 International Business Machines Corporation Interferometer for in situ measurement of thin film thickness changes

Also Published As

Publication number Publication date
TW264564B (de) 1995-12-01
JPH07130812A (ja) 1995-05-19
JP3892913B2 (ja) 2007-03-14
KR940027051A (ko) 1994-12-10
DE69432203D1 (de) 2003-04-10
US5399229A (en) 1995-03-21
EP0631304A2 (de) 1994-12-28
DE69432203T2 (de) 2004-01-08
KR100299635B1 (ko) 2001-11-30
EP0631304A3 (de) 1995-05-24
EP0631304B1 (de) 2003-03-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee