DE69426090T2 - Verfahren zur Herstellung einer optische Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer optische HalbleitervorrichtungInfo
- Publication number
- DE69426090T2 DE69426090T2 DE69426090T DE69426090T DE69426090T2 DE 69426090 T2 DE69426090 T2 DE 69426090T2 DE 69426090 T DE69426090 T DE 69426090T DE 69426090 T DE69426090 T DE 69426090T DE 69426090 T2 DE69426090 T2 DE 69426090T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- optical semiconductor
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01076—Osmium [Os]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12511493 | 1993-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69426090D1 DE69426090D1 (de) | 2000-11-16 |
DE69426090T2 true DE69426090T2 (de) | 2001-03-01 |
Family
ID=14902196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69426090T Expired - Fee Related DE69426090T2 (de) | 1993-04-27 | 1994-04-27 | Verfahren zur Herstellung einer optische Halbleitervorrichtung |
Country Status (3)
Country | Link |
---|---|
US (2) | US5917200A (de) |
EP (1) | EP0622837B1 (de) |
DE (1) | DE69426090T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6027957A (en) * | 1996-06-27 | 2000-02-22 | University Of Maryland | Controlled solder interdiffusion for high power semiconductor laser diode die bonding |
JPH10223690A (ja) * | 1997-02-13 | 1998-08-21 | Nec Corp | 光素子の実装方法 |
DE19730118B4 (de) | 1997-07-14 | 2006-01-12 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Herstellung einer Chip-Substrat-Verbindung |
DE69839300T2 (de) * | 1997-12-15 | 2009-04-16 | Philips Lumileds Lighting Company, LLC, San Jose | Licht-emittierende Vorrichtung |
US6265240B1 (en) * | 1998-03-24 | 2001-07-24 | Lucent Technologies, Inc. | Method and apparatus for passively aligning components on semiconductor dies |
JP3601722B2 (ja) * | 1998-03-30 | 2004-12-15 | 株式会社山武 | ダイボンド用ハンダ材 |
US6222207B1 (en) * | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6214646B1 (en) * | 2000-02-29 | 2001-04-10 | Lucent Technologies Inc. | Soldering optical subassemblies |
JP2002289768A (ja) * | 2000-07-17 | 2002-10-04 | Rohm Co Ltd | 半導体装置およびその製法 |
US6946685B1 (en) | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
JP3409781B2 (ja) * | 2000-09-05 | 2003-05-26 | 住友電気工業株式会社 | 光半導体モジュールの製造方法 |
JP4131623B2 (ja) * | 2001-09-12 | 2008-08-13 | 三洋電機株式会社 | 電極構造およびその製造方法 |
JP4136648B2 (ja) * | 2002-12-26 | 2008-08-20 | 日本碍子株式会社 | 異種材料接合体及びその製造方法 |
JP4906256B2 (ja) * | 2004-11-10 | 2012-03-28 | 株式会社沖データ | 半導体複合装置の製造方法 |
JP4950557B2 (ja) * | 2005-05-31 | 2012-06-13 | 三洋電機株式会社 | 半導体発光装置 |
JP5120653B2 (ja) * | 2006-04-17 | 2013-01-16 | Dowaエレクトロニクス株式会社 | 半田層及びそれを用いたデバイス接合用基板並びに該デバイス接合用基板の製造方法 |
JP5526336B2 (ja) * | 2007-02-27 | 2014-06-18 | Dowaエレクトロニクス株式会社 | 半田層及びそれを用いたデバイス接合用基板並びにその製造方法 |
JP4341693B2 (ja) * | 2007-05-16 | 2009-10-07 | ウシオ電機株式会社 | Led素子およびその製造方法 |
KR101266205B1 (ko) * | 2008-07-08 | 2013-05-21 | 우시오덴키 가부시키가이샤 | 발광 장치 및 발광 장치의 제조 방법 |
KR101266226B1 (ko) * | 2008-07-09 | 2013-05-21 | 우시오덴키 가부시키가이샤 | 발광 장치 및 발광 장치의 제조 방법 |
AT513747B1 (de) | 2013-02-28 | 2014-07-15 | Mikroelektronik Ges Mit Beschränkter Haftung Ab | Bestückungsverfahren für Schaltungsträger und Schaltungsträger |
CN106298719A (zh) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | 金属凸块结构及其形成方法 |
CN107591338A (zh) * | 2017-08-11 | 2018-01-16 | 苏州孚尔唯系统集成有限公司 | 一种基于tlp扩散连接的电子封装方法 |
JP7168280B2 (ja) * | 2018-06-26 | 2022-11-09 | 住友電工デバイス・イノベーション株式会社 | 半導体装置、および、半導体チップの搭載方法 |
EP4002428B1 (de) * | 2020-11-19 | 2023-11-01 | Murata Manufacturing Co., Ltd. | Verfahren zur herstellung eines interposers |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986255A (en) * | 1974-11-29 | 1976-10-19 | Itek Corporation | Process for electrically interconnecting chips with substrates employing gold alloy bumps and magnetic materials therein |
GB2137131B (en) * | 1983-03-15 | 1986-06-25 | Standard Telephones Cables Ltd | Bonding semiconductive bodies |
US4772935A (en) * | 1984-12-19 | 1988-09-20 | Fairchild Semiconductor Corporation | Die bonding process |
US4929516A (en) * | 1985-03-14 | 1990-05-29 | Olin Corporation | Semiconductor die attach system |
JPS6438777A (en) * | 1987-08-04 | 1989-02-09 | Minolta Camera Kk | Scattered toner capturing device |
JPH01138777A (ja) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | 光半導体素子用サブマウント |
US5280414A (en) * | 1990-06-11 | 1994-01-18 | International Business Machines Corp. | Au-Sn transient liquid bonding in high performance laminates |
US5197654A (en) * | 1991-11-15 | 1993-03-30 | Avishay Katz | Bonding method using solder composed of multiple alternating gold and tin layers |
US5234153A (en) * | 1992-08-28 | 1993-08-10 | At&T Bell Laboratories | Permanent metallic bonding method |
US5298735A (en) * | 1992-10-07 | 1994-03-29 | Eastman Kodak Company | Laser diode and photodetector circuit assembly |
-
1994
- 1994-04-27 EP EP94106599A patent/EP0622837B1/de not_active Expired - Lifetime
- 1994-04-27 DE DE69426090T patent/DE69426090T2/de not_active Expired - Fee Related
-
1995
- 1995-05-25 US US08/452,653 patent/US5917200A/en not_active Expired - Fee Related
-
1996
- 1996-04-29 US US08/638,873 patent/US5854087A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5917200A (en) | 1999-06-29 |
US5854087A (en) | 1998-12-29 |
EP0622837B1 (de) | 2000-10-11 |
DE69426090D1 (de) | 2000-11-16 |
EP0622837A1 (de) | 1994-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |