DE69418447T2 - VERFAHREN ZUR AUSFORMUNG DÜNNER TUNNELFENSTER IN EEPROMs - Google Patents
VERFAHREN ZUR AUSFORMUNG DÜNNER TUNNELFENSTER IN EEPROMsInfo
- Publication number
- DE69418447T2 DE69418447T2 DE69418447T DE69418447T DE69418447T2 DE 69418447 T2 DE69418447 T2 DE 69418447T2 DE 69418447 T DE69418447 T DE 69418447T DE 69418447 T DE69418447 T DE 69418447T DE 69418447 T2 DE69418447 T2 DE 69418447T2
- Authority
- DE
- Germany
- Prior art keywords
- oxide layer
- oxide
- layer
- substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000007493 shaping process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 238000007667 floating Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 71
- 230000008569 process Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- -1 Si3N4 Chemical compound 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/163—Thick-thin oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/100,467 US5352618A (en) | 1993-07-30 | 1993-07-30 | Method for forming thin tunneling windows in EEPROMs |
| PCT/US1994/006860 WO1995004371A1 (en) | 1993-07-30 | 1994-06-17 | METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69418447D1 DE69418447D1 (de) | 1999-06-17 |
| DE69418447T2 true DE69418447T2 (de) | 2000-01-05 |
Family
ID=22279908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69418447T Expired - Lifetime DE69418447T2 (de) | 1993-07-30 | 1994-06-17 | VERFAHREN ZUR AUSFORMUNG DÜNNER TUNNELFENSTER IN EEPROMs |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5352618A (enExample) |
| EP (1) | EP0664051B1 (enExample) |
| JP (1) | JP3729849B2 (enExample) |
| KR (1) | KR100297301B1 (enExample) |
| CN (1) | CN1045348C (enExample) |
| DE (1) | DE69418447T2 (enExample) |
| TW (1) | TW248615B (enExample) |
| WO (1) | WO1995004371A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5429960A (en) * | 1994-11-28 | 1995-07-04 | United Microelectronics Corporation | Method of making flash EEPROM memory |
| US5521109A (en) * | 1995-09-01 | 1996-05-28 | United Microelectronics Corp. | Method for fabricating a high coupling ratio flash memory with a very narrow tunnel layer |
| US5963806A (en) * | 1996-12-09 | 1999-10-05 | Mosel Vitelic, Inc. | Method of forming memory cell with built-in erasure feature |
| US5895240A (en) * | 1997-06-30 | 1999-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making stepped edge structure of an EEPROM tunneling window |
| US5918133A (en) * | 1997-12-18 | 1999-06-29 | Advanced Micro Devices | Semiconductor device having dual gate dielectric thickness along the channel and fabrication thereof |
| US6255165B1 (en) * | 1999-10-18 | 2001-07-03 | Advanced Micro Devices, Inc. | Nitride plug to reduce gate edge lifting |
| US6518072B1 (en) * | 1999-11-05 | 2003-02-11 | Advanced Micro Devices, Inc. | Deposited screen oxide for reducing gate edge lifting |
| US20060073509A1 (en) * | 1999-11-18 | 2006-04-06 | Michael Kilpatrick | Method for detecting and quantitating multiple subcellular components |
| US6624027B1 (en) | 2002-05-09 | 2003-09-23 | Atmel Corporation | Ultra small thin windows in floating gate transistors defined by lost nitride spacers |
| US6905926B2 (en) * | 2003-09-04 | 2005-06-14 | Atmel Corporation | Method of making nonvolatile transistor pairs with shared control gate |
| US7161203B2 (en) * | 2004-06-04 | 2007-01-09 | Micron Technology, Inc. | Gated field effect device comprising gate dielectric having different K regions |
| US7553704B2 (en) * | 2005-06-28 | 2009-06-30 | Freescale Semiconductor, Inc. | Antifuse element and method of manufacture |
| US7528015B2 (en) * | 2005-06-28 | 2009-05-05 | Freescale Semiconductor, Inc. | Tunable antifuse element and method of manufacture |
| CN106816368B (zh) * | 2015-12-01 | 2019-11-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构和cmos晶体管的形成方法 |
| CN114551452A (zh) * | 2016-10-21 | 2022-05-27 | 联华电子股份有限公司 | 单层多晶硅电子抹除式可复写只读存储器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4817561A (en) * | 1986-12-17 | 1989-04-04 | Ichthyotech, Ltd. | Aquatic aeration and filtering system |
| US4755477A (en) * | 1987-03-24 | 1988-07-05 | Industrial Technology Research Institute | Overhang isolation technology |
| JP2701332B2 (ja) | 1988-07-08 | 1998-01-21 | 日本電気株式会社 | 浮遊ゲート型不揮発性半導体記憶装置の製造方法 |
| US4941822A (en) * | 1989-07-20 | 1990-07-17 | Marvin Evans | Apparatus for heat treating contaminated particulate material |
| CN2078413U (zh) * | 1990-10-13 | 1991-06-05 | 福建省宁德市茶叶机械制造厂 | 连续反烧燃煤装置 |
| US5216270A (en) * | 1991-02-28 | 1993-06-01 | Texas Instruments Incorporated | Non-volatile memory cell with tunnel window structure and method |
| US5236862A (en) * | 1992-12-03 | 1993-08-17 | Motorola, Inc. | Method of forming oxide isolation |
-
1993
- 1993-07-30 US US08/100,467 patent/US5352618A/en not_active Expired - Lifetime
-
1994
- 1994-06-17 JP JP50581295A patent/JP3729849B2/ja not_active Expired - Fee Related
- 1994-06-17 WO PCT/US1994/006860 patent/WO1995004371A1/en not_active Ceased
- 1994-06-17 CN CN94190431A patent/CN1045348C/zh not_active Expired - Fee Related
- 1994-06-17 DE DE69418447T patent/DE69418447T2/de not_active Expired - Lifetime
- 1994-06-17 KR KR1019950700777A patent/KR100297301B1/ko not_active Expired - Fee Related
- 1994-06-17 EP EP94922441A patent/EP0664051B1/en not_active Expired - Lifetime
- 1994-07-12 TW TW083106312A patent/TW248615B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08502630A (ja) | 1996-03-19 |
| TW248615B (enExample) | 1995-06-01 |
| EP0664051B1 (en) | 1999-05-12 |
| EP0664051A4 (en) | 1996-01-10 |
| US5352618A (en) | 1994-10-04 |
| KR950703209A (ko) | 1995-08-23 |
| CN1111466A (zh) | 1995-11-08 |
| EP0664051A1 (en) | 1995-07-26 |
| CN1045348C (zh) | 1999-09-29 |
| WO1995004371A1 (en) | 1995-02-09 |
| JP3729849B2 (ja) | 2005-12-21 |
| DE69418447D1 (de) | 1999-06-17 |
| KR100297301B1 (ko) | 2001-10-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |