CN1045348C - 在电可擦编程只读存储器中形成薄隧穿窗口的方法 - Google Patents

在电可擦编程只读存储器中形成薄隧穿窗口的方法 Download PDF

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Publication number
CN1045348C
CN1045348C CN94190431A CN94190431A CN1045348C CN 1045348 C CN1045348 C CN 1045348C CN 94190431 A CN94190431 A CN 94190431A CN 94190431 A CN94190431 A CN 94190431A CN 1045348 C CN1045348 C CN 1045348C
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China
Prior art keywords
layer
oxide
oxide layer
nitride
substrate
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Expired - Fee Related
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CN94190431A
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English (en)
Chinese (zh)
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CN1111466A (zh
Inventor
布拉德利·J·拉森
唐纳德·A·埃里克森
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Atmel Corp
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Atmel Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10P14/3416—
    • H10P14/3426—
    • H10P76/2041—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/163—Thick-thin oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN94190431A 1993-07-30 1994-06-17 在电可擦编程只读存储器中形成薄隧穿窗口的方法 Expired - Fee Related CN1045348C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US100,467 1993-07-30
US08/100,467 US5352618A (en) 1993-07-30 1993-07-30 Method for forming thin tunneling windows in EEPROMs

Publications (2)

Publication Number Publication Date
CN1111466A CN1111466A (zh) 1995-11-08
CN1045348C true CN1045348C (zh) 1999-09-29

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CN94190431A Expired - Fee Related CN1045348C (zh) 1993-07-30 1994-06-17 在电可擦编程只读存储器中形成薄隧穿窗口的方法

Country Status (8)

Country Link
US (1) US5352618A (enExample)
EP (1) EP0664051B1 (enExample)
JP (1) JP3729849B2 (enExample)
KR (1) KR100297301B1 (enExample)
CN (1) CN1045348C (enExample)
DE (1) DE69418447T2 (enExample)
TW (1) TW248615B (enExample)
WO (1) WO1995004371A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429960A (en) * 1994-11-28 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory
US5521109A (en) * 1995-09-01 1996-05-28 United Microelectronics Corp. Method for fabricating a high coupling ratio flash memory with a very narrow tunnel layer
US5963806A (en) 1996-12-09 1999-10-05 Mosel Vitelic, Inc. Method of forming memory cell with built-in erasure feature
US5895240A (en) * 1997-06-30 1999-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making stepped edge structure of an EEPROM tunneling window
US5918133A (en) * 1997-12-18 1999-06-29 Advanced Micro Devices Semiconductor device having dual gate dielectric thickness along the channel and fabrication thereof
US6255165B1 (en) * 1999-10-18 2001-07-03 Advanced Micro Devices, Inc. Nitride plug to reduce gate edge lifting
US6518072B1 (en) * 1999-11-05 2003-02-11 Advanced Micro Devices, Inc. Deposited screen oxide for reducing gate edge lifting
US20060073509A1 (en) * 1999-11-18 2006-04-06 Michael Kilpatrick Method for detecting and quantitating multiple subcellular components
US6624027B1 (en) 2002-05-09 2003-09-23 Atmel Corporation Ultra small thin windows in floating gate transistors defined by lost nitride spacers
US6905926B2 (en) * 2003-09-04 2005-06-14 Atmel Corporation Method of making nonvolatile transistor pairs with shared control gate
US7161203B2 (en) * 2004-06-04 2007-01-09 Micron Technology, Inc. Gated field effect device comprising gate dielectric having different K regions
US7528015B2 (en) * 2005-06-28 2009-05-05 Freescale Semiconductor, Inc. Tunable antifuse element and method of manufacture
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
CN106816368B (zh) * 2015-12-01 2019-11-05 中芯国际集成电路制造(上海)有限公司 半导体结构和cmos晶体管的形成方法
CN114551452A (zh) * 2016-10-21 2022-05-27 联华电子股份有限公司 单层多晶硅电子抹除式可复写只读存储器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0346331A1 (en) * 1986-12-17 1989-12-20 Ichthyotech Ltd AERATION AND FILTERING SYSTEM FOR AQUARIUM LIQUID.
US4941822A (en) * 1989-07-20 1990-07-17 Marvin Evans Apparatus for heat treating contaminated particulate material
CN2078413U (zh) * 1990-10-13 1991-06-05 福建省宁德市茶叶机械制造厂 连续反烧燃煤装置
US5216270A (en) * 1991-02-28 1993-06-01 Texas Instruments Incorporated Non-volatile memory cell with tunnel window structure and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755477A (en) * 1987-03-24 1988-07-05 Industrial Technology Research Institute Overhang isolation technology
JP2701332B2 (ja) * 1988-07-08 1998-01-21 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置の製造方法
US5236862A (en) * 1992-12-03 1993-08-17 Motorola, Inc. Method of forming oxide isolation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0346331A1 (en) * 1986-12-17 1989-12-20 Ichthyotech Ltd AERATION AND FILTERING SYSTEM FOR AQUARIUM LIQUID.
US4941822A (en) * 1989-07-20 1990-07-17 Marvin Evans Apparatus for heat treating contaminated particulate material
CN2078413U (zh) * 1990-10-13 1991-06-05 福建省宁德市茶叶机械制造厂 连续反烧燃煤装置
US5216270A (en) * 1991-02-28 1993-06-01 Texas Instruments Incorporated Non-volatile memory cell with tunnel window structure and method

Also Published As

Publication number Publication date
JP3729849B2 (ja) 2005-12-21
WO1995004371A1 (en) 1995-02-09
EP0664051B1 (en) 1999-05-12
KR100297301B1 (ko) 2001-10-24
TW248615B (enExample) 1995-06-01
KR950703209A (ko) 1995-08-23
EP0664051A1 (en) 1995-07-26
US5352618A (en) 1994-10-04
CN1111466A (zh) 1995-11-08
DE69418447D1 (de) 1999-06-17
DE69418447T2 (de) 2000-01-05
JPH08502630A (ja) 1996-03-19
EP0664051A4 (en) 1996-01-10

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: Atmel Corp.

Address before: California, USA

Patentee before: ATMEL Corp.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 19990929

Termination date: 20130617